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The
inset graph shows the temperature dependence of the resistance R of a
germanium (Ge) substrate (red line) and a heavily gallium (Ga) doped
germanium layer (grey-blue line) measured in a four point probe
arrangement (schematic as inset, U: voltage, I: current). While the
Ge substrate exhibits an exponential increase of the resistance with
decreasing temperature as typical for semiconductors, the heavily Ga
doped Ge layer behaves "metallic" and becomes superconducting below
0.3 K. The background shows a high-resolution cross-sectional
electron microscopy image of the superconducting Ge:Ga layer.
For further information see: T. Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217 003 (2009), reprinted at pp. 22-25 of this Annual Report. |
Preface
W. Möller, M. Helm, J. Faßbender
Selected Publications
Copyright RemarksLong lifetimes of quantum-dot intersublevel transitions in the terahertz range
E.A. Zibik, T. Grange, B.A. Carpenter, N.E. Porter, R. Ferreira, G.
Bastard, D. Stehr, S. Winnerl, M. Helm, H.Y. Liu, M.S. Skolnick, and
L.R. Wilson
Conduction at domain walls in oxide multiferroics
J. Seidel, L.W. Martin, Q. He, Q. Zhan, Y.H. Chu, A. Rother, M.E.
Hawkridge, P. Maksymovych, P. Yu, M. Gajek, N. Balke, S.V.
Kalinin, S. Gemming, F. Wang, G. Catalan, J.F. Scott, N.A. Spaldin, J.
Orenstein, and R. Ramesh
Superconducting state in a gallium-doped germanium layer at low temperatures
T. Herrmannsdörfer, V. Heera, O. Ignatchik, M. Uhlarz, A.
Mücklich, M. Posselt, H. Reuther, B. Schmidt, K.-H. Heinig,
W. Skorupa, M. Voelskow, C. Wündisch, R. Skrotzki, M. Helm, and J.
Wosnitza
Interstitial-mediated diffusion in germanium under proton irradiation
H. Bracht, S. Schneider, J.N. Klug, C.Y. Liao, J.L. Hansen, E.E.
Haller, A.N. Larsen, D. Bougeard, M. Posselt, and C. Wündisch
Fano signatures in the intersubband terahertz response of optically excited semiconductor quantum wells
D. Golde, M. Wagner, D. Stehr, H. Schneider, M. Helm, A. M. Andrews, T. Roch, G. Strasser, M. Kira, and S. W. Koch
Transition from smoothing to roughening of ion-eroded GaSb surfaces
A. Keller, A. Biermanns, G. Carbone, J. Grenzer, S. Facsko, O. Plantevin, R. Gago, and T. H. Metzger
Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering
S. Cornelius, M. Vinnichenko, N. Shevchenko, A. Rogozin, A. Kolitsch, and W. Möller
Highly dense amorphous Nb2O5 films with closed nanosized pores
M. Vinnichenko, A. Rogozin, D. Grambole, F. Munnik, A. Kolitsch, W.
Möller, O. Stenzel, S. Wilbrandt, A. Chuvilin, and U. Kaiser
Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations
S. Zhou, D. Bürger, M. Helm, and H. Schmidt
In-situ observation of secondary phase formation in Fe implanted GaN annealed in low pressure N2 atmosphere
G. Talut, J. Grenzer, H. Reuther, A. Shalimov, C. Baehtz, D. Novikov, and B. Walz
Millisecond flash lamp annealing of shallow implanted layers in Ge
C. Wündisch, M. Posselt, B. Schmidt, V. Heera, T. Schumann, A.
Mücklich, R. Grötzschel, W. Skorupa, T. Clarysse, E.
Simoen, and H. Hortenbach
The use of nanocavities for the fabrication of ultrathin buried oxide layers
X. Ou, R. Kögler, A. Mücklich, W. Skorupa, W. Möller, Xi Wang, and L.Vines
Light emitting field effect transistor with two self-aligned Si nanocrystal layers
V. Beyer, B. Schmidt, K.-H. Heinig, and K.-H. Stegemann
Enhanced
blue-violet emission by inverse energy transfer to the Ge-related
oxygen deficiency centers via Er3+ ions in metal-oxide semiconductor
structures
A. Kanjilal, L. Rebohle, M. Voelskow, W. Skorupa, and M. Helm
Resonant enhancement of second order sideband generation for intraexcitonic transitions in GaAs/AlGaAs multiple quantum wells
M. Wagner, H. Schneider, S. Winnerl, M. Helm, T. Roch, A. M. Andrews, S. Schartner, and G. Strasser
Statistics
Organization of Conferences / Workshops
Visitors (AIM / FEL / ROBL-MRH)
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| Annual Report IIM 2009, FZD-528, Online-Version: 16.03.2010 - JvB. | |