Defects and dopants in semiconductor materials (Si, Ge, SiC)
Ion implantation, defect formation and evolution
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introduction(1) (pdf, 43kB)
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ion-beam-induced defect evolution in Ge(3) (pdf, 217kB)
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ion-beam-induced defect formation in Si(4) (pdf, 483kB)
Structure, energetics, migration, and recombination of defects
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interstitial contribution to self-diffusion in Si (with movies)(5), (pdf, 6082kB)
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di- and tri-interstitials in Si (with movie)(6) (pdf, 3934kB)
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elementary defects in SiC(7) (pdf, 225kB)
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antisite pair recombination in SiC(8) (pdf, 452kB)
Implantation and doping
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URL of this article
https://www.hzdr.de/db/Cms?pOid=21571