Germanium
- Ion-beam-induced defect evolution in Ge (pdf, 217 kB)(1)
- Doping of Ge by ion implantation and subsequent annealing (pdf, 217 kB)(2)
URL of this article
https://www.hzdr.de/db/Cms?pOid=25030
More information
Doping and defects in semiconductor materials: https://www.hzdr.de/db/Cms?pNid=2689
Links of the content
(1) | https://www.hzdr.de/db/Cms?pOid=24203 |
(2) | https://www.hzdr.de/db/Cms?pOid=24209 |