SiC Synthesis

SiC-crystals can be formed as a buried layer within Si substrates by C+ ion implantation into Si. A pre-stage of SiC formation has been detected by TEM [6] and XRD [7].

The SiC layer can be separated by etching-off the Si matrix. Stable SiC membranes with excellent surface flatness are formed in this way [8]. The surface of such layers can be used as a seed to produce "thick" SiC layers by CVD on Si or SiO2 substates [9].



[6] P. Werner, S. Eichler, G. Mariani, R. Kögler, and W. Skorupa
Appl. Phys. Lett. 70, 252 (1997)

[7] F. Eichhorn, N. Schell, W. Matz, and R. Kögler
J. Appl. Phys. (1999)

[8] C. Serre, A. Perez-Rodriguez, A. Romano-Rodriguez, L. Calvo-Barrio, J.R. Morante, J. Esteve, M.C. Acero, W. Skorupa, and R. Kögler
J. Electrochem. Soc. 144 (6), 2211 (1997)

[9] A. Romano-Rodriguez, A. Perez-Rodriguez, C. Serre, J.R. Morante, J. Esteve, M.C. Acero, R. Kögler, W. Skorupa, M. Östling, N. Nordell, S. Karlsson, and J. Van Landuyt,
Int. Conf. on Silicon Carbide and Related Materials 1999, Proc. p. 466, Research Triangle Park, NC, Oct. 1999