For dedicated process parameters a sharp interface cluster band was found in about 3 nm distance from the interface Si / SiO2. All the clusters have been found to be in the amorphous state. The process leading to the formation of this interface cluster band is based on the dynamics of the ion implantation. A model based on TRIM calculations, rate equation studies and 3D – kinetic Monte Carlo simulations explains this self organization process. Small Si agglomerates, which are formed during implantation due to collisional mixing and near interface oxygen diffusion act as nucleation centers. During the annealing process diffusing Ge from the implanted Ge maximum is trapped at these centers and forms clusters. As a result a sharp d – like cluster band is formed.