Contact

Dr. Matthias Posselt
Head Fundamentals and Simulation
m.posseltAthzdr.de
Phone: +49 351 260 - 3279, 2199
Fax: 13279, 3285

Defects and dopants in semiconductor materials (Si, Ge, SiC)

Ion implantation, defect formation and evolution


Structure, energetics, migration, and recombination of defects 


Implantation and doping


Contact

Dr. Matthias Posselt
Head Fundamentals and Simulation
m.posseltAthzdr.de
Phone: +49 351 260 - 3279, 2199
Fax: 13279, 3285