Ions available

Ion Implantation

40 kV Low Energy Ion Implanter: Chamber;
200 kV Ion Implanter: Implantation Chamber Channel 1, Implantation Chamber Channel 2;
500 kV Ion Implanter: Double implantation chamber with in-situ analysis, Implantation chamber 1, Implantation chamber 2, Implantation chamber 3 with automatic wafer handling

HE Ion Implantation

High Energy Implantation, 6 MV Tandetron, 3 MV Tandetron

PBII Equipment