Thermal Processing

Thermal processes are used for thermal oxidation of silicon, annealing of radiation damage after ion  beam treatment and for electrical activation of dopants as well as for drive-in-diffusion after ion implantation. For this purpose the following facilities are available.

Horizontal Furnace with three quartz tubes, (INOTHERM)

Operating temperature 300...1150 °C
Process gases

O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2
(all of 5.0 purity)

Wafer diameter max. 150 mm
Wafer quantity max. 25
Processes

Dry oxidation

Growth of high quality gate oxides, dox = (10...250) nm
Gases: dry O2, dry O2+3% HCl
Temperature range: (900...1100) °C

Wet oxidation

Growth of thick field oxides, dox= (200...1500) nm
Gases: wet O2
Temperature range: (900...1150) °C

 Annealing Annealing of radiation defects after ion implantation
Drive-in-diffusion after implantation
Metal contact forming
Gases: N2, Ar, N2+5%H2, Ar+7% H2
Temperature range: (300...1150) °C

 

Horizontal Furnace with three quartz tubes, DA62 (ELEKTROMAT)

Operating temperature 300...1150 °C
Process gases

O2 (wet and dry), O2+HCl, N2, N2+5%H2, Ar+7%H2
(all of 5.0 purity)

Wafer diameter max. 100 mm
Wafer quantity max. 50
Processes

Dry oxidation

Growth of high quality gate oxides, dox = (10...250) nm
Gases: dry O2, dry O2+3% HCl
Temperature range: (900...1100) °C

Wet oxidation

Growth of thick field oxides, dox= (200...1500) nm
Gases: wet O2
Temperature range: (900...1150) °C

 Annealing Annealing of radiation defects after ion implantation
Drive-in-diffusion after implantation
Metal contact forming
Gases: N2, Ar, N2+5%H2, Ar+7% H2
Temperature range: (300...1100) °C

 

Rapid Thermal Processing Facility ADDAX XM-A4 (ADDAX)

System Two-wall and DI-water cooled quarz chamber
Wafer diameter max. 100 mm
Wafer quantity Single wafer load lock system
Processes Rapid thermal annealingof radiation defects after ion implantation with minimized broadening and in-diffusion of implanted profiles.
Rapid thermal oxydation with dox < 20 nm , nitridation and silicide forming.

Gases: N2, Ar, O2 , all of 5.0 purity
Temperature range: (474...1200) °C
Processing time: (0.5...5) min

 

High Temperature Vacuum Annealing Facility (J.I.P.ELEC)

Substrate diameter max. 35 mm
Process chamber

Quartz tube closed by aluminum flanges

Susceptor Glassy carbon box on top of a glassy carbon tube to hold it at the center of the inductor
Vacuum 10-6 mbar (Leak rate < 5·10-8 mbar l/s)
Process gases N2 and Ar  (purity 9 ppb H2O)
Gas flow Mass flow controller, 0...2 slm
Temperature range 700...2000 °C
Temperature control Pyrometer, thermo-couple optional
Power max. 10 kW
RF 10...100 kHz
Cooling Flanges and inductor coil water cooled, quartz tube air cooled
Process control Programmable controller providing detailed control over subsystems and processes
Vacuum system Turbomolecular pump in connection with membrane pump - completely oil-free
Current application Thermal processing of ion implanted SiC