Contact

Porträt Dr. Bischoff, Lothar; FWIZ-N

Dr. Lothar Bischoff
Ion Induced Nanostructures
l.bischoffAthzdr.de
Phone: +49 351 260 - 2866, 2963
Fax: +49 351 260 - 12866

Defect formation and dynamic annealing during FIB implantation

Applying FIB implantation the ion current density (or the ion flux) on the target may be varied by six orders of magnitude by varying the beam movement velocity. So a quasi-stationary beam can have a density in the focus of about 10 A/cm2 whereas a fast scanning beam (pixel dwell time < 1µs) only reach a density in the order of µA/cm2. In collaboration with the theory group of our Institute the defect formation and dynamic annealing as a function of the implantation temperature were studied on Si, Ge as well as on SiC.

Relativer Schaden in Ge in Abhängigkeit von der Ga-FIB Ionenstromdichte und Implantationstemperatur
Relative disorder in Ge in dependence on the Ga-FIB ion beam density and the implantation temperature, obtained by channeling RBS. The black and red curves correspond to implantation at room temperature, the green and blue ones to implantation at 250 °C. "Single scan" represents implantation with a flux of 1019 cm−2 s−1 and "PDT=2µs" 1012 cm−2 s−1, respectively.

 


Contact

Dr. Lothar Bischoff
Ion Induced Nanostructures
l.bischoffAthzdr.de
Phone: +49 351 260 - 2866, 2963
Fax: +49 351 260 - 12866