Contact

Porträt Dr. Bischoff, Lothar; FWIZ-N

Dr. Lothar Bischoff
Ion Induced Nanostructures
l.bischoffAthzdr.de
Phone: +49 351 260 - 2866, 2963
Fax: +49 351 260 - 12866

Publications - Focused Ion Beams (FIB)

Diploma theses

PhD theses

Patents

Publications

2015

  • M. Schmidt, J. König, L. Bischoff, W. Pilz, and G. Zschornack, Surface and material analytics based on Dresden-EBIS platform technology, AIP Conf. Proc. 1640 (2015) 88 – 93.
  • F. Röder, G. Hlawacek, S. Wintz, R. Hübner, L. Bischoff, H. Lichte, K. Potzger, J. Lindner, J. Fassbender, and R. Bali, Direct Depth- and Lateral- Imaging of Nanoscale Magnets Generated by Ion Impact,  Scientific Reports 5 (2015) 16786-1 – 13.
  • B. N. Dev, N. Banu, J. Fassbender, J. Grenzer, N. Schell, L. Bischoff, R. Groetzschel, and J. McCord, Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magneticnonmagnetic multistrip patterning by focused ion beam, arXiv:1507.03748  (2015).

2014

  • P. Philipp, L. Bischoff, U. Treske, B. Schmidt, J. Fiedler, R. Hübner, F. Klein, A. Koitzsch, and T. Mühl, The origin of conductivity in ion irradiated diamond-like carbon – Phase transformation and ordering by transient heat injection Carbon 80 (2014) 677 – 690.
  • L. Bischoff, R. Böttger, K.-H. Heinig, S. Facsko, and W. Pilz, Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions, Applied Surface Science 310 (2014) 154 – 157.
  • K. Buchta, M. Lewandowski, L. Bischoff, K. Synoradzki, M. Błaszyk, T. Toliński, and T. Luciński,Magnetization reversal in Co zigzag nanocolumns grown by glancing angle deposition, Thin Solid Films 568 (2014) 13 – 18.

2013

  • L. Bischoff, R. Böttger, P. Philipp and B. Schmidt, Nanostructures by mass-separated FIB, in FIB Nanostructures (Lecture Notes in Nanoscale Science and Technology, vol. 20), ed. Z. Wang, Peking, Berlin, Springer (2013) 465-525.
  • R. Böttger, K.-H. Heinig, L. Bischoff, B. Liedke and S. Facsko, From holes to sponge at irradiated Ge surfaces with increasing ion energy - an effect of defect kinetics?, Appl. Phys. A (Rap. Commun.) 113 (2013) 53-59.
  • R. Böttger, K.-H. Heinig, L. Bischoff, B. Liedke, R. Hübner and W. Pilz, Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 Ions, Phys. Stat. Solidi RRL 7 (2013) 501-505.
  • R. Böttger, A. Keller, L. Bischoff, and S. Facsko, Mapping the local elastic properties of nanostructured germanium surfaces: from nanoporous sponges to self-organized nanodots, Nanotechnology 24 (2013) 115702
  • T. Tsvetkova, C. D. Wright, P. Hosseini, L. Bischoff and J. Zuk, Implantation temperature effects on the optical pattern fabrication in a-SiC:H films by Ga+ focused ion beam implants, Acta Phys. Pol. A 123 (2013) 952-955
  • T. Tsvetkova, C. D. Wright, S. Kitova, L. Bischoff and J. Zuk, Effects of implantation temperature and thermal annealing on the Ga+ ion beam induced optical contrast formation in a-SiC:H, Nucl. Instr. Meth. Phys. Res. B 307 (2013) 71–76

2012

  • A. Thorn, L. Bischoff, W. Pilz, E. Ritter, F. Ullmann and G. Zschornack, Liquid Metal Ion Source based Metal Ion Injection into an Electron Beam Ion Source, Rev. Sci. Instr. 83 (2012) 02A511.
  • T. Tsvetkova, C. D. Wright, M. Craciun, L. Bischoff, O. Angelov and D. Dimova-Malinovska, Thermal effects on the Ga+ ion beam induced structural modification of a-SiC:H, J. Phys.: Conf. Ser. 398 (2012) 012048.
  • P. Phillipp and L. Bischoff, Investigation of conducting nanostructures on ta-C films made by FIB lithography, Nucl. Instr. and Meth. B 282 (2012) 121-124.
  • P. Phillipp and L. Bischoff, Investigations of nano structures on DLC films made by focused ion beam lithography, Diamond and Related Materials 23 (2012) 140-143.
  • P. Phillipp and L. Bischoff, Taming of Ga droplets on DLC layers – Size tuning and local arrangement with nm accuracy, Nanotechnology 23 (2012) 475304
  • R. Böttger, L. Bischoff, K.-H. Heinig, W. Pilz and B. Schmidt, From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts, J. Vac. Sci. Technol. B 30 (2012) 06FF12.
  • R. Böttger, L. Bischoff, S. Facsko, and B. Schmidt, Quantitative analysis of the order of Bi ion induced dot patterns on Ge, EPL 98 (2012) 16009.
  • L. Bischoff, K.-H. Heinig, B. Schmidt, S. Facsko and W. Pilz, Self-organization of Ge nanopattern under erosion with heavy Bi monomer and cluster ions, Nucl. Instr. Meth. in Phys. Res. B 722 (2012) 198-201.

2011

  • R. Böttger, L. Bischoff, B. Schmidt and M. Krause, Characterization of Si nanowires fabricated by Ga+ FIB implantation and subsequent selective wet etching, J. Micromech. Microeng. 21 (2011) 095025.
  • L. Bischoff, W. Pilz and B. Schmidt, Amorphous solid foam structures on germanium by heavy ion irradiation Applied Physics A 104 (2011) 1153 - 1158.

2010

  • L. Bischoff, W. Pilz, P. Mazarov and A. D. Wieck, Comparison of bismuth emitting liquid metal ion sources Applied Physics A 99 (2010) 145 -150.
  • S. Balabanov, T. Tsvetkova, E. Borisova, L. Avramov, L. Bischoff and J. Zuk, Optical properties of Si+ implanted PMMA, Journal of Physics: Conference Series 223 (2010) 012032.
  • T. Tsvetkova, S. Balabanov, L. Avramov, E. Borisova, I. Angelov and L. Bischoff, Photoluminescence of Si+ and C+ implanted polymers, Journal of Physics: Conference Series 223 (2010) 012033.
  • T. Tsvetkova, S. Balabanov, L. Bischoff, V. Krastev, P. Stefanov and I. Avramova, X-Ray Photoelectron Study of Si+ Ion Implanted Polymers, J. Phys.: Conference Series 253 (2010) 012070.
  • B. Pantchev, P. Danesh, B. Schmidt, D. Grambole and L. Bischoff Ion-beam induced hydrogen redistribution in a-Si:H-based triple layer structures, J. Phys.: Conference Series 253 (2010) 012055.
  • A. Thorn, E. Ritter, A. Sokolov, G. Vorobjev, L. Bischoff, F. Herfurth, O. Kester, W. Pilz, D.B. Thorn, F. Ullmann and G. Zschornack, Optimization of the Electron Beam Properties of Dresden EBIT Devices for Charge Breeding, Journal of Instrumentation 5 (2010) C09006.

2009

  • L. Bischoff, B. Schmidt, H. Lange and D. Donzev, Nano-structures for sensors on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching, Nucl. Instr. Meth. in Phys. Res. B 267 (2009) 1372 – 1375.
  • P. Mazarov, A. D. Wieck, L. Bischoff and W. Pilz, Alloy Liquid Metal Ion Source for Carbon Focused Ion Beams, Journal of Vacuum Science and Technology B 27 (6) (2009) L47 – L49.
  • T. Tsvetkova, S. Balabanov, L. Avramov, E. Borisova, I. Angelov, S. Sinning and L. Bischoff, Photoluminescence enhancement in Si+ implanted PMMA, Vacuum 83 (2009) S252 – S255.
  • M. Baleva, G. Zlateva, T. Tsvetkova, S. Balabanov and L. Bischoff, Vibrational Spectra of Silicon Implanted Polymethyl-methacrylate (PMMA) and Poly-propylene (PP), Journal of Optoelectronics and Advanced Materials 11 (10) (2009) 1420 - 1423.
  • K. Kuepper, S. Wintz, J. Raabe, M. Buess, Ch. Akhmadaliev, L. Bischoff, C. Quitmann and J. Fassbender, Magnetization dynamics of Landau structures: tuning the response of mesoscopic magnetic objects using defects, Journal of Physics: Condensed Matter, 21 (43) (2009) 436003

2008

  • L. Bischoff, Application of mass-separated focused ion beams in nano-technology, Nucl. Instr. Meth. in Phys. Res. B 266 (2008) 1846 – 1851.
  • L. Bischoff and Ch. Akhmadaliev, An alloy liquid metal ion source for lithium, J. Phys. D: Appl. Phys. 41 (2008) 052001.
  • T. Tsvetkova, S. Balabanov, L. Avramov, E. Borisova and L. Bischoff, Si+ implantation induced Photoluminescence enhancement in PMMA, Przeglad Elektrotechniczny 84 (3) (2008) 72 – 74.
  • S. Balabanov, T. Tsvetkova, E. Borisova, L. Avramov and L. Bischoff, Dose dependence of visible range diffuse reflectivity for Si+ and C+ ion implanted polymers, Journal of Physics: Conference Series 113 (2008) 012038.
  • S. Balabanov, T. Tsvetkova, E. Borisova, L. Avramov and L. Bischoff, Spectral distribution of UV range diffuse reflectivity for Si+ ion implanted polymers, Journal of Physics: Conference Series 113 (2008) 012039

2007

  • K. Kuepper, L. Bischoff, Ch. Akhmadaliev, J. Fassbender, H. Stoll, K. Chou, A. Puzic, K. Fauth, D. Dolgos, G. Schütz, B. Waeyenberge, T. Tyliszczak, I. Neudecker, G. Wolterdorf, C. Back, Vortex dynamics in permalloy disks with artificially defects: Suppression of the gyrotropic mode, Appl. Phys. Lett. 90 (2007) 062506.
  • T. Ganetsos, A.W.R.Mair, G.L.R. Mair, L. Bischoff, Ch. Akhmadaliev and C.J. Aidinis, Can direct field-evaporation of doubly-charged ions and post-ionization from the singly-charged state co-exist?, Surface and Interface Analysis 39 (2007) 128 - 131.
  • L. Bischoff, Ch. Akhmadaliev and B. Schmidt, Defect induced nanowire growth by FIB implantation, Microelectronic Engineering 84 (2007) 1459 -1462.
  • L. Bischoff , W. Pilz, Th. Ganetsos, R. Forbes and Ch. Akhmadaliev, GaBi alloy liquid metal ion source for the production of ions of interest in microelectronics research, Ultramicroscopy 107 (2007) 865-868.
  • C. Schöndorfer, A. Lugstein, L. Bischoff, Y.J. Hyun, P. Pongratz and E. Bertagnolli, FIB induced growth of antimony nanowires, Microelectronic Engineering 84 (2007) 1440-1442.
  • S. Takahashi, P. Dawson, A.V. Zayats, L. Bischoff, O. Angelov, D. Dimova-Malinovska, T.Tsvetkova, and P.D. Townsend, Optical contrast in ion-implanted amorphous silicon carbide nanostructures, Journal of Physics D-Applied Physics 40 (23) (2007) 7492-7496.

2006

  • J. Meijer, T. Vogel, B. Burchard, I.W. Rangelow, L. Bischoff, J. Wrachtrup, M. Domhan, F. Jelezko, W. Schnitzler, S. Schulz, K. Singer and F. Schmidt-Kaler, Concept of deterministic single ion doping with sub-nm spatial resolution, Applied Physics A 83 (2006) 321-327.
  • L. Bischoff, B. Schmidt, Ch. Akhmadaliev and A. Mücklich, Investigation of FIB synthesised CoSi2 nanowire growth, Microelectronic Engineering,83 (2006) 800-803.
  • J. Fassbender, L. Bischoff, R. Mattheis, and P. Fischer, Magnetic domains and magnetization reversal of ion-induced magnetically patterned Ruderman-Kittel-Kasuya-Yoshida-coupled Ni81Fe19/Ru/Co90Fe10 films, J. Appl. Phys. 99, (2006) 08G301-1-3.
  • Ch. Akhmadaliev, L. Bischoff, and B. Schmidt, CoSi2 nanostructures by writing FIB ion beam synthesis, Materials Science and Engineering C 26 (2006) 818-821.
  • V. Luchnikov, M. Stamm, Ch. Akhmadaliev, L. Bischoff and B. Schmidt, Focused-ion-beam-assisted fabrication of polymer rolled-up microtubes, J. Micromech. Microeng. 16 (2006) 1602-1605.
  • M. Posselt, L. Bischoff, D. Grambole and F. Herrmann, Competition between damage build-up and dynamic annealing in ion implantation in Ge, Appl. Phys. Lett. 89 (2006) 151918.
  • C. Akhmadaliev, B. Schmidt and L. Bischoff, Defect induced formation of CoSi2 nanowires by FIB assisted ion beam synthesis, Appl. Phys. Lett. 89 (2006) 223129.
  • C. Akhmadaliev, B. Schmidt and L. Bischoff, Defect induced formation of CoSi2 nanowires by focused ion beam synthesis, Applied Physics Letters 89, 22312 (2006).
  • C. Akhmadaliev, L. Bischoff and B. Schmidt, CoSi2 nanostructures by writing FIB ion beam synthesis, Materials Science and EngineeringC 26, 818 (2006).

2005

  • L. Bischoff, G.L.R. Mair, Ch. Akhmadaliev, A.W.R. Mair and Th. Ganetsos, The post-ionisation of Pb ions from a molten Sn host field-ion emitter, Applied Physics A 80 (2005) 205-207.
  • L. Bischoff, Alloy liquid metal ion sources and their application in mass separated focused ion beams, Ultramicroscopy 103 (2005) 59-66.
  • G.L.R Mair, L. Bischoff, C.A.Londos, Th. Ganetsos, Ch. Akhmadaliev and C.J. Aidinis, An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter, Applied Physics A 81 (2005) 385-388.
  • J. Grenzer, L. Bischoff, and U. Pietsch, Grazing-Incidence Diffraction Strain Analysis of a Laterally patterned Si wafer treated by Focused Ge and Au Ion Beam Implantation, Physica Status Solidi. (a) 202 (2005) 1009-1016.
  • T. Tsvetkova, S .Takahashi, A. Zayats, P. Dawson, R. Turner, L. Bischoff, O. Angelov and D. Dimova Malinovska, Near-Field Optical Mapping of the Ion-Implanted Patterns Fabricated in Amorphous Silicon Carbide, Vacuum 79 (2005) 94-99.
  • T. Tsvetkova, S .Takahashi, A. Zayats, P. Dawson, R. Turner, L. Bischoff, O. Angelov and D. Dimova-Malinovska, Fabrication of Nano-Scale optical patterns in Amorphous Silicon Carbide with Focused Ion Beam Writing, Vacuum 79 (2005) 100-105.
  • A. Gorbunov, A.A. Levin, D.C. Meyer, L. Bischoff, D. Eckert, B. Köhler, M. Mertig, T. Weissbach, E. Wieser, and W. Pompe, Correlation of structural and physical properties of metastable Fe-Cr phases, Crystal Research and Technology 40 (1-2)(2005) 106-113.
  • K. Potzger, L. Bischoff, M. O. Liedke, B. Hillebrands, M. Rickart, P. P. Freitas, J. McCord, and J. Fassbender, Domain structure of magnetically micro-patterned PtMn/NiFe exchange bias bilayers, IEEE Transactions on Magnetics 41 (2005) 3610-3612.
  • B. Schmidt, S. Oswald and L. Bischoff, Etch rate retardation of Ga+ion beam irradiated silicon, Journal of The Electrochemical Society 152 (2005) G875-G879.
  • L. Bischoff, W. Pilz, Th. Ganetsos, Ch. Akhmadaliev, C. J. Aidinis and. C.A.Londos, On the temperature dependence of the mass spectra of AuGe and AuGeSi liquid metal alloy ion sources, Journal of Physics: Conference Series 10 (2005) 214-217.

2004

  • Ch. Akhmadaliev, L. Bischoff, G.L.R Mair, C.J. Aidinis and Th. Ganetsos, Investigation of emission instabilities of liquid metal alloy ion sources, Microelectronic Engineering 73-74 (2004) 120-125.
  • C.J. Aidinis, L. Bischoff, G.L.R Mair, C.A.Londos, Th. Ganetsos and Ch. Akhmadaliev, Study of a liquid metal field emitter for the production of Si ions, Microelectronic Engineering 73-74 (2004) 116 -119.
  • C.J. Aidinis, G.L.R. Mair, L. Bischoff, C.A.Londos, Ch.Akhmadaliev and Th. Ganetsos, The temperature dependence of the energy distribution of the beam emitted by a Au82Si18 liquid metal field-ion emitter, Nucl. Instruments Meth in Phys. Res. B 222(2004) 627-631.
  • L. Bischoff, Ch. Akhmadaliev, A.W.R. Mair, G.L.R. Mair, C.J. Aidinis and Th. Ganetsos, Investigation of a tin liquid metal ion source, Applied Physics A 79 (2004) 89- 92.
  • J. Seidel, S. Grafström, L.M. Eng, F.I. Baida, D. van Labeke, B. Guizal and L. Bischoff, Coupling between surface plasmon modes on metal films, Phys. Rev. B 69 (2004) 121405.
  • L. Bischoff, G.L.R Mair, C.J. Aidinis, C.A.Londos, Ch.Akhmadaliev, and Th. Ganetsos, A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms, Ultramicroscopy 100 (2004) 1-7.
  • G.L.R. Mair, Ch. Akhmadaliev, L. Bischoff, Th. Ganetsos, C.J. Aidinis and E.A. Anagnostakis,The effect of electrode geometry on the stability of a liquid metal ion emitter, Nucl. Instr. Meth. in Phys. Res. B 217 (2004) 347-351.
  • W. Leitenberger, H. Wendrock, L. Bischoff and T. Weitkamp, Pinhole interferometry with coherent hard x-rays, Journal of Synchrotron Radiation 11, Part 2 (2004) 190-197.
  • L. Bischoff, G. L. R. Mair, A. W. R. Mair, Th. Ganetsos and Ch.Akhmadaliev, The mass spectrum of a tin liquid metal ion source, Nucl. Instr. Meth. in Phys. Res. B 222 (2004) 622-626.

2003

  • L. Bischoff, J. Teichert, S. Kitova and T. Tsvetkova, Optical pattern formation in a-SiC:H films by Ga+ ion implantation, Vacuum 69 (2003) 73-77.
  • Ch. Akhmadaliev, L. Bischoff, J. Teichert, and K. Kazbekov, Ion acoustic microscopy based on IMSA-100 focused ion beam system, Vacuum, 69 (2003) 431-435.
  • W. Knapp, L. Bischoff and J. Teichert, Solidified Liquid Metal Ion Source - Formation of a Nanoemitter, Vacuum 69 (2003) 345-349.
  • Th. Ganetsos, G.L.R Mair and L. Bischoff, On the temperature dependence of the electric characteristics and mass spectra of liquid metal alloy ion sources, Ultramicroscopy 95 (2003) 171-181.
  • W. Leitenberger, H. Wendrock, L. Bischoff, T. Panzer, U. Pietsch, J. Grenzer and A. Pucher, Double pinhole diffraction of white synchrotron radiation, Physica B 336 (2003) 63-67.
  • Ch. Akhmadaliev, L. Bischoff, G.L.R. Mair, CJ. Aidinis, Th. Ganetsos and M. Anagnostakis, Temperatur dependence of emission frequency of a liquid metal anode, J. Phys. D: Applied Physics 36 (2003) L18-L20.
  • J. Seidel, S. Grafström, L. Eng, and L. Bischoff, Surface plasmon transmission across narrow grooves in thin silver films, Appl. Phys. Lett. 82 (2003) 1368-1370.
  • L. Bischoff and B. Schmidt, Low capacitance point diodes fabricated with focused ion beam implantation, SolidStateElectronics 47 (2003) 989-993.
  • M. Posselt, L. Bischoff, J. Teichert and A. Ster, Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC: Influence on the shape of channeling implantation profiles, J. Appl. Phys.93 (2003) 1004-1013.
  • L. Bischoff and G.L.R. Mair, Alloy liquid metal ion sources for mass separated focused ion beams, Recent Research Developments in Applied Physics, 6 (2003) 123-133.
  • T. Tsvetkova, O. Angelov, M. Senova-Vassieva, D. Dimora-Malinovska, L. Bischoff, G.J. Andriaenssens, W. Grudzinski and J. Zuk, Structural and optical properties modification of a-SiC:H by Ga+implantation, Vacuum 70 (2003) 467-470.
  • Ch. Akhmadaliev and L. Bischoff, Analysis of microstructures using the ion-acoustic effect, Materials Science and Engineering B 102 (2003) 8-11.
  • Th. Ganetsos, G.L.R Mair, C.J. Aidinis and L. Bischoff, Characteristics of erbium-producing liquid metal ion sources, Physica B 340-342 (2003) 1166-1170.
  • G.L.R. Mair, Ch. Akhmadaliev, L. Bischoff, Th. Ganetsos and C.J. Aidinis, Electrohydrodynanic instabilities on a liquid anode displaying an anomalous surface tension coefficient, Nucl. Instr. Meth. in Phys. Res. B 211 (2003) 556-561.
  • A. Gorbunov, A.A. Levin, E. Wieser, L. Bischoff, D. Eckert, A. Mensch, M. Mertig, D.C. Meyer, H. Reuther, P. Paufler, and W. Pompe, Formation and decomposition of laser-deposited metastable Fe-Cr phases, Proc. SPIE 5121 (2003) 306 - 316.

2002

  • G.L.R. Mair, L. Bischoff, A.W.R. Mair, C.J. Aidinis, Th. Ganetsos, and C.A.Aleiev, An in-depth investigation of the energy distribution of doubly-charged ions emitted from a Liquid Metal Alloy Ion Source, J. Phys. D: Appl. Phys. 35 (2002) L 33 -L 36.
  • G.L.R. Mair, C.J. Aidinis, L. Bischoff, and Th. Ganetsos, On the dynamics of liquid metal ion sources ,J. Phys. D: Appl. Phys. 35 (2002) 1392 - 1396.
  • A. Travlos, N. Boukos, G. Apostolopoulos, C.J. Aidinis and L. Bischoff, Epitaxial erbium silicide on Ge+ implanted silicon, Nucl. Instr. Meth. in Phys. Res. B 196(2002) 174-179.
  • Posselt, M., Bischoff, L., Teichert, J., Ster, A. Dose rate and temperature dependence of ion-beam-induced defect evolution in Si and SiC, Mat. Res. Soc. Symp. Proc. Vol. 719(2002) F11.2.1 - F11.2.7.
  • Ch. Akhmadaliev, G.L.R. Mair, , C.J. Aidinis and L. Bischoff, Frequency spectra and eletrohydrodynamic phenomena in a liquid gallium field ion emission source, J. Phys. D: Appl. Phys. 35 (2002) L91-L93.
  • D. Späth, H. Tritschler, L. Bischoff and W. Schulz, Micromilling - High Potential Technology for Micromechanical Parts, Proceedings of the 6th International Conference on Advanced Manufacturing Systems andTechnology, AMST 02, June 20 - 21, Udine, Italy.
  • J. Schmidt, H. Tritschler and L. Bischoff, Improvement of Micro End Milling Tools through Variation of Tool Manufacturing Method and Geometry, International Journal of Nonlinear Sciences and Numerical Simulation 3 (2002) 595-598.
  • L. Bischoff, G.L.R Mair, C.J. Aidinis, and Th. Ganetsos, Fundamental properties of erbium-ions-producing liquid metal alloy ion sources, Nucl. Instr. Meth. in Phys. Res. B 197(2002) 282-287.

2001

  • L. Bischoff, J. Teichert, and S. Hausmann, Dose rate dependence of irradiation damage in silicon, Nucl Instr. Meth in Phys. Res. B178 (2001) 165-169.
  • J. Martin, L. Bischoff , and R. Wannemacher, Microscopy of Ion-Beam Generated Fluorescent Color Center Patterns in LiF, Opt. Commun. 188 (2001) 119-128.
  • Ch. Akhmadaliev, L. Bischoff, J. Teichert, and K. Kazbekov, Ion acoustic microscopy for imaging of buried structures based on a focused ion beam, Microelectronic Engineering 57 - 58 (2001) 659 � 664.
  • Th. Ganetsos, C. Aidinis, L. Bischoff, G.L.R. Mair, J. Teichert, D. Panknin and I.Papadopoulos, Liquid metal ion source-produced germanium ions for maskless ion implantation, J. Phys. D: Appl. Phys. 34 (2001) L 11 - L 13
  • C. J. Aidinis, G. L. R. Mair, L. Bischoff and I.Papadopoulos, A study of the temperature dependence of the energy spread and energy deficit of a Ge++ ion beam produced by a liquid metal alloy ion source, J. Phys. D: Appl. Phys. 34 (2001) L 14 -L 16.
  • L. Bischoff, J. Teichert, Th. Ganetsos and G.L.R. Mair, Effect of Temperature on the Electric Emission Characteristics of Liquid Metal Alloy Ion Sources, J. Vac. Sci. Technol. B19 (2001) 76-78.
  • M. Posselt, J. Teichert, L. Bischoff and S. Hausmann, Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation, Nucl Instr. Meth in Phys. Res. B178 (2001) 170-175.
  • M. Posselt, L. Bischoff and J. Teichert, Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses, Appl. Phys. Lett.79 (2001) 1444-1446.
  • Th. Ganetsos, G. L. R. Mair, L. Bischoff, J. Teichert and D. Kioussis, A study of liquid metal alloy ion sources for the production of ions of interest in the microelectronics industry, SolidStateElectronics 45 (2001) 1049-1054.
  • L. Bischoff and J. Teichert, Writing Cobalt FIB Implantation into 6H:SiC Applied Surface Science 184 (2001) 336-339.
  • L. Bischoff, J. Teichert and V. Heera, Focused Ion Beam Sputtering Investigations on SiC, Applied Surface Science 184 (2001) 372-376.

2000

  • L. Bischoff, J. Teichert, S. Hausmann, T. Ganetsos, and G.L.R. Mair, Investigation and optimization of the emission parameters of alloy liquid metal ion sources, Nucl Instr. Meth in Phys. Res. B 161-163 (2000) 1128-1131.
  • L. Bischoff, J. Teichert , S. Hausmann , T. Ganetsos and G.L.R. Mair, Temperature and energy spread investigations of alloy LMIS, Microelectronic Engineering, 53 (2000) 613-616.
  • J. Teichert, L. Bischoff, S. Hausmann, M. Voelskow and H. Hobert, Micro- Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation, Appl. Phys A 71 (2000) 175-180.
  • S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, and W. Möller, Dwell-time related effects in focused ion beam synthesis of cobalt disilicide, J. Appl. Phys. 87 (2000) 57 - 62.
  • L. Bischoff, J. Teichert, Th. Ganetsos and G.L.R. Mair, Temperature Dependence of the Electric Characteristics of Liquid Metal Alloy Ion Sources, J. Vac. Sci. and Technol. B19 (2001) 76 -78.
  • L. Bischoff, Th. Ganetsos, J. Teichert, and G.L.R. Mair, Temperature dependence of emission spectra of liquid metal alloy ion sources, Nucl. Instr. Meth. in Phys. Res. B164-165(2000) 999 - 1003.
  • J. Teichert, H. Hobert, L. Bischoff, and S. Hausmann, Raman investigation of lattice defects in the CoSi2 synthesis using focused ion beam implantation, Microelectronic Engineering 50 (2000) 187-192.
  • L. Bischoff, J. Teichert, Th. Ganetsos, and G.L.R. Mair, Temperature dependence of the electric characteristics of liquid metal alloy ion sources, J. Phys. D: Appl. Phys. 33 (2000) 692-695.
  • L. Bischoff and J. Teichert, Liquid metal ion source working with an Er70Fe22Ni5Cr3 alloy, J. Phys. D: Appl. Phys. 33 (2000) L69-L72.
  • G.L.R. Mair, Th. Ganetsos, L. Bischoff, and J. Teichert, Doubly-charged ions from liquid metal alloy ion sources: direct field-evaporation or post-ionization?, J. Phys. D: Appl. Phys. 33 (2000) L86– L89.

Diploma theses

  • Roman Böttger, Nanostructures on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching, TU Chemnitz 01/2011
  • Sylvia Mucke, Herstellung von Nanometer-Strukturen mittels feinfokussiertem Ionenstrahl (FIB), Hochschule Mittweida (FH) 02/2004

PhD theses

  • Peter Philipp, Phase transformation in tetrahedral amorphous carbon by focused ion beam irradiation, TU Dresden 01/2014
  • Roman Böttger, Self-organized nanostructures by heavy ion Irradiation: defect kinetics and melt pool Dynamics, TU Chemnitz 01/2014
  • Chavkat Akhmadaliev, Investigation of acoustic waves generated in an elastic solid by a pulsed ion beam and their application in a FIB based scanning ion acoustic microscope, TU Dresden 10/2004
  • Stefan Hausmann, Die Dynamik von Strahlenschäden durch fokussierte Ionenstrahlen am Beispiel der Ionenstrahlsynthese, TU Dresden 10/2000

Patents

  • L. Bischoff und Ch. Akhmadaliev,
    Flüssigmetall-Ionenquelle zur Erzeugung von Lithium Ionenstrahlen
    Patentanmeldung DE 10 2007 027 097.8 (2007)
  • W. Pilz und L. Bischoff,
    Emitter for an ion source and method of producing same
    European patent application 04017894.9 Applicant : ICT GmbH 28.07.2004.
    European patent application 05016351.8 Applicant : ICT GmbH 27.07.2005.
  • T. Tsvetkova, L. Bischoff, J. Teichert,
    Schichtmaterial für optische Informationsträger und Lichtmasken sowie Verfahren zur Herstellung des Schichtmaterials
    Patentanmeldung AZ 101 43 616.5 06.09 (2001)
  • B. Schmidt, L. Bischoff, L. Eng,
    Verfahren zur Herstellung von integrierten Abtastnadeln
    Patent: DE 100 57 656 C1 (2000)
    Patent: EP 1 209 689 A2
  • B. Köhler, L. Bischoff and J. Teichert,
    Vorrichtung und Verfahren zur gezielten Probenbearbeitung, vorzugsweise von Halbleiterbauelementen, mittels einer Ionen-Feinstrahlanlage
    Patentanmeldung 196.06.479.3 (1996)
  • J. Teichert and E. Hesse,
    Flüssigmetallionenquelle zur Emission von Kobaltionenstrahlen
    Deutsches Patent DE 4312028 A1 (1994)
    Europäisches Patent 94105227.6 (1994)

Contact

Dr. Lothar Bischoff
Ion Induced Nanostructures
l.bischoffAthzdr.de
Phone: +49 351 260 - 2866, 2963
Fax: +49 351 260 - 12866