Interface magnetism

Contact

Dr. Kay Potzger
Project group leader
Tel.: 0351-260-3244, 2411
E-Mail: k.potzger@hzdr.de


Group members

Dr. Rantej Bali

Jonathan Ehrler

Dr. Maciej Oskar Liedke

Dr. Anna Semisalova

Naren Srinivasan


Former group members

Alireza Heidarian
Julius Beck
Alevtina Smekhova

Oguz Yildirim
Steffen Cornelius
Camilo Otalora

Daniel Blaschke
Maik Butterling
Nico Spahn
Falk Meutzner
Armin Haase

Tim Andrae
Kerstin Bernert
Nikolas Blum
Marcel Höwler

Tina Nestler
Julia Osten
Artem Shalimov
Georg Talut
Gufei Zhang
Shengqiang Zhou


Meetings

-FWIN-G -meeting thursdays at 12:45 (Meeting minutes)
-MEMRIOX-meeting fridays at 1pm
-DETI.2-meeting mondays at 1pm  (Meeting minutes)

-AIDA-meeting on fridays at 11:30


Downloads

PREM (Preisach simulations)

MBE sample sheet

Further MBE instructions: O:\Labs\MBE_712_108_108a


Lectures

- Magnetic materials, TUBA Freiberg, summer semester

Spin tranfer torque effects in metallic multilayers and tunnel structures

Funding: BMBF, FKZ 13N10144

Cooperation:

Dr. Roland Mattheis, IPHT Jena

Dr. Dima Berkov, INNOVENT Jena

 

Abstract

The spin-transfer-torque (STT) effect was discovered as a side effect in GMR multilayer elements. Nowadays it represents a promising approach towards switching of magnetic bits by means of electric current or the creation of electromagnetic waves due to current driven oscillations of the magnetisation. Prerequisite for such devices are nanoscale multilayer elements with a diameter below 200 nm. GMR and TMR, i.e. magneto-resistance elements allow the read out of the stored information via the electric resistance and not the magnetic stray field. Our project deals with the fabrication of such elements by means of thin film deposition and electron beam Lithography as well as understanding the generated oscillations of the magnetization and the switching process.. For the latter the Landau-Lifshitz-Gilbert equation will be applied which describes the time dependent behaviour of the magnetization and the STT effect.


Figures

Nanopillar based on a TMR multilayer (exemplarily) along with the switching behaviour of the magneto-resistance

pillars4 Left: TEM Cross section of a electrically contacted TMR nanopillar

Right: Electron microscopy of a free-standing nanopillar

switch Left: Hysteresis loops of the magneto resistance vs. dc current dependent on the external magnetic field.

Right: Dependence of the critical switching current on the external magnetic field

Publications

In preparation