200 kV Ion Implanter

  • Supplier:
 DANFYSIK 1090 Ion Implanters
  • Ion source:
 Hot filament, gaseous and solid source feed
  • Energy range (+):
 25 to 200 keV
  • Scan principle:
 twofold magnetic (1), twofold electrostatic (2)

Implantation Chamber Channel 1

DANFYSIK-200kV
  • Substrates:
 user defined, up to 10 kg
  • Substrate size:
 (xyz) = 370 mm x 370 mm x 600 mm
  • Implant area:
 maximal 400 mm x 400 mm
  • Implant angle (tilt):
 0° to 90°
  • Substrate temperature:
 no cooling, no heating
  • Dose range:
 > 1e15 cm-2

Implantation Chamber Channel  2

DANFYSIK-200kV-2
  • Substrates:
 Wafers
  • Substrate size:
 75 mm to 100 mm wafers or smaller probes
  • Implant area:
 maximal 100 mm x 100 mm
  • Implant angle (tilt):
 0° to 45°, other angles on request
  • Substrate temperature:
 standard target station or high temperature target chamber (1100 °C)
  • Dose range:
 1e13 to 1e17 cm-2

Contact

Prof. Dr. Andreas Kolitsch
Head
a.kolitschAthzdr.de

Links

Equipment Ion Beam Cen­ter