Contact

Prof. Dr. Andreas Kolitsch
HZDR Innovation GmbH
a.kolitschAthzdr.de
Phone: +49 351 260 - 3348
Fax: 13348, 2703

200 kV Ion Implanter

  • Supplier:
DANFYSIK 1090 Ion Implanters
  • Ion source:
Hot filament, gaseous and solid source feed
  • Energy range (+):
25 to 200 keV
  • Scan principle:
twofold magnetic (1), twofold electrostatic (2)

Implantation Chamber Channel 1

DANFYSIK-200kV

  • Substrates:
user defined, up to 10 kg
  • Substrate size:
(xyz) = 370 mm x 370 mm x 600 mm
  • Implant area:
maximal 400 mm x 400 mm
  • Implant angle (tilt):
0° to 90°
  • Substrate temperature:
no cooling, no heating
  • Dose range:
> 1e15 cm-2

Implantation Chamber Channel  2

DANFYSIK-200kV-2

  • Substrates:
Wafers
  • Substrate size:
75 mm to 100 mm wafers or smaller probes
  • Implant area:
maximal 100 mm x 100 mm
  • Implant angle (tilt):
0° to 45°, other angles on request
  • Substrate temperature:
standard target station or high temperature target chamber (1100 °C)
  • Dose range:
1e13 to 1e17 cm-2

Contact

Prof. Dr. Andreas Kolitsch
HZDR Innovation GmbH
a.kolitschAthzdr.de
Phone: +49 351 260 - 3348
Fax: 13348, 2703