Contact

Prof. Dr. Andreas Kolitsch
HZDR Innovation GmbH
a.kolitschAthzdr.de
Phone: +49 351 260 - 3348
Fax: 13348, 2703

500 kV Ionenimplanter

  • Supplier:
High Voltage Engineering HVEE
  • Ion source:
Hollow cathode or hot filament, gaseous and solid source feed
  • Energy range (+):
10 bis 450 keV
  • Scan principle:
twofold electrostatic in all 4 channels

Double implantation chamber with in-situ analysis

500kV Doppelimplantationskammer

  • Substrates:
 small probes
  • Substrate size:
20 mm x 20 mm
  • Implant area:
maximal 14 mm x 14 mm
  • Implant angle (tilt):
22,5°
  • Substrate temperature:
RT - 1200°C
  • Dose range:
5e10 to 5e16 cm-2

Implantation chamber 1

500 kV Implanter

  • Substrates:
Wafer
  • Substrate size:
50 mm to 150 mm wafer or smaller probes
  • Implant area:
maximal 125mm x 125mm
  • Implant angle (tilt):
7° s standard
  • Substrate temperature:
no cooling, no heating
  • Dose range:
5e10 bis 5e16 cm-2

Implantation chamber 2

500kV Implanter Kammer 2

  • Substrates:
user defined, up to Ø 50 mm
  • Substrate size:
50 mm wafer or smaller probes
  • Implant area:
maximal 50 mm x 50 mm
  • Implant angle (tilt):
7° as standard
  • Substrate temperature:
up to  800°C for 1x1 cm2, up to 600°C up to 75 mm probes (50 mm implant area), -80°C (w/o beam) up to 75 mm (50 mm implant area)
  • Dose range:
5e10 to 5e16 cm-2

Implantation chamber 3 with automatic wafer handling

500kV Implanter Kammer3

  • Substrates :
Wafer
  • Substrate size:
100 mm Wafer
  • Implant area:
Ø 98 mm
  • Implant angle (tilt):
  • Substrate temperature:
RT, water cooled
  • Dose range:
5e12 to 5e15 cm-2

Contact

Prof. Dr. Andreas Kolitsch
HZDR Innovation GmbH
a.kolitschAthzdr.de
Phone: +49 351 260 - 3348
Fax: 13348, 2703