3 MV Tandetron

  • Supplier
High Voltage Engineering HVEE
  • Ion source
Duoplasmatron model 358 + Li-charge exchange channel (only for He-)
Cs sputter source, model 860C
  • Terminal voltage
0,1 -3 MeV
  • Energy range
0,2 -8 MeV

(I) Channel 2: Single Wafer, large implantation chamber

3 MV Kanal 2

Scan principle

x, y electrostatic (f 1 kHz)

Substrate

Wafers

Substrate size

up to 125 mm wafers

Implant angle (tilt)

7° as standard

Substrate temperature

no cooling, typically RT

Dose range

starting from 5e10 cm-2

Wafer throughput

typically 20 wafers/h, depending on the dose

(II) Channel 2: Single Wafer, small implantation chamber

3 MV HT-Implantation

Scan principle

x, y electrostatic (f 1 kHz)

Substrate

Wafers

Substrate size

up to 100 mm wafers

Implant angle (tilt)

7° or 0°

Substrate temperature

from LN2 up to 400°C

Dose range

starting from 5e10 cm-2

Wafer throughput

typically 10 wafers/h, depending on dose

(III) Channel 4: Wafer handler

3 MV Kanal 4

Scan principle

x, y mechanicly (EATON NV-10)

Substrate

wafers

Substrate size

100 mm, 125 mm and 150 mm wafers

Implant angle (tilt)

7° as standard

Substrate temperature

no cooling, typically RT

Dose range

starting from 1e12 cm-2

Wafer throughput

up to 100 wafers/h