6 MV Tandetron

  • Supplier
High Voltage Engineering HVEE
  • Ion source

Duoplasmatron model 358 + Li charge exchange channel (only for He-)

Cs sputter source, model 860C 
  • Terminal voltage
0,3 -6 MeV
  • Energy range
0.6 - 50 MeV (depending on charge state)

(I) Channel 3: Single wafer implantation chamber

6 MV Kanal 3 Scan principle x, y electrostatic (f 1 kHz)
Substrate wafers
Substrate size up to 150 mm wafers
Implant angle (tilt) 7° as standard
Substrate temperature no cooling, typically RT
Dose range starting from 1e10 cm-2
Wafer throughput typically 20 wafers/h, depending on dose

(II) B2: Wafer handler

6MV Waferhändler Scan principle

≤ 150 mm: x, y electrostatic,

>150mm, hybrid of electrostatic and mechanic 
Substrate wafers
Substrate size up to 200 mm wafers
Implant angle (tilt) 7° as standard, 0° to 90° on request
Substrate temperature no cooling, typically RT
Dose range starting from 1e10 cm-2 
Wafer throughput up to 50 wafers/h, depending on dose