Contact

Spokesperson:
Prof. Dr. Sibylle Gemming

Phone: +49 (0) 351 260-2470
Email: s.gemming.at.hzdr.de

Deputy Spokesperson:
Dr. Heidemarie Schmidt

Phone: +49 (0) 371 531-32481
Email: Heidemarie.Schmidt.at.etit.tu-chemnitz.de

Coordinator:
Dr. Peter Zahn

Phone: +49 (0) 351 260-3121
Email: p.zahn.at.hzdr.de

News and Events

2016-08-22
CNNA 2016 - Memristor Workshop, Dresden, DE - program

2016-09-25/27
MEMRIOX International Workshop, Berghotel Bastei, DE - Registration

www.memristor.org

Acknowledgement 

The project is funded by the Initiative and Networking Fund of the Helmholtz Association (VH-VI-422).

Helmholtz-Logo weiß auf blau

MEMRIOX Publications / Presentations

MEMRIOX publications

     2016 

  • Rensberg, J.; Zhang, S.; Zhou, Y.; Mcleod, A. S.; Schwarz, C.; Goldflam, M.; Liu, M.; Kerbusch, J.; Nawrodt, R.; Ramanathan, S.; Basov, D. N.; Capasso, F.; Ronning, C.; Kats, M., Active optical metasurfaces based on defect-engineered phase-transition materials, Nano Lett. 16, 1050–1055 (2016)
  • A. Bogusz, O. S. Choudhary, I. Skorupa, D. Bürger, A. Lawerenz, Y. Lei, H. Zeng, B. Abendroth, H. Stöcker, O. G. Schmidt and H. Schmidt, Photocapacitive light sensor based on metal-YMnO3-insulator-semiconductor structures, Appl. Phys. Lett. 108, 052103 (2016)
  • T. You, L. P. Selvaraj, H. Zeng, W. Luo, N. Du, D. Bürger, I. Skorupa, S. Prucnal, A. Lawerenz, T. Mikolajick, O.G. Schmidt, and H. Schmidt, An Energy-Efficient, BiFeO3-Coated Capacitive Switch with Integrated Memory and Demodulation Functions, Adv. Electron. Mater. xx, 1500352 (2016)
  •  2015 

  • K. Skaja, C. Bäumer, O. Peters, S. Menzel, M. Moors, H. Du, M. Bornhöfft, C. Schmitz, V. Feyer, Ch.-L. Jia, C. M. Schneider, J. Mayer, R. Waser, and R. Dittmann, Avalanche-Discharge-Induced Electrical Forming in Tantalum Oxide-Based Metal–Insulator–Metal Structures, Adv. Func. Mat. 25, 7154 (2015)
  • Wedig, Skaja, Waser, Valov et al., NNANO.2015.221 Eye catcher  

    A. Wedig, M. Lübben, D.-Y. Cho, M. Moors, K. Skaja, V. Rana, T. Hasegawa, K. K. Adepalli, B. Yildiz, R. Waser, and I. Valov, Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems, Nature Nanotechnology, published 28 September (2015)

  • ADDE-Report 2015 TP 8 Eye catcher  

    B. Abendroth, S. Rentrop, W. Münchgesang, H. Stöcker, J. Rensberg, C. Ronning, S. Gemming, and D.C. Meyer,
    Atomic layer deposition of dielectric thin films in the ternary system TiO2-SrTiO3,
    in Functional structure design of new high performance materials via atomic design and defect engineering (ADDE), editor D. Rafaja, 118-133 (2015),
    More info: DNB/1081108355

  • ADDE-Report 2015 TP 7 Eye catcher  

    H. Stöcker, J. Hanzig, M. Zschornak, E. Mehner, S. Jachalke, and D.C. Meyer,
    Strontium titanate – breaking the symmetry,
    in Functional structure design of new high performance materials via atomic design and defect engineering (ADDE), editor D. Rafaja, 100-116 (2015),
    More info: DNB/1081108355

  • T. You, X. Ou, G. Niu, F. Bärwolf, G. Li, N. Du, D. Bürger, I. Skorupa, Q. Jia, W. Yu, X. Wang, O.G. Schmidt and H. Schmidt, Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes, Scientific Reports 5, 18623 (2015)
  • C. Bäumer, C. Schmitz, A.H.H. Ramadan, H. Du, K. Skaja, V. Feyer, P. Müller, B. Arndt, C.-L. Jia, J. Mayer, R.A. De Souza, C.M. Schneider, R. Waser, and R. Dittmann, Spectromicroscopic insights for rational design of redox-based memristive devices, Nature Communications 6, 8610 (2015)
  • S. Slesazeck, H. Mähne, H. Wylezich, A. Wachowiak, J. Radhakrishnan, A. Ascoli, R. Tetzlaff, and T. Mikolajick, Physical model of threshold switching in NbO2 based memristors, RSC Advances 5, 102318 (2015)
  • Helge Wylezich, Elena Reinhardt, Stefan Slesazeck, and Thomas Mikolajick, Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays, Semicond. Sci. Technol. 30, 115014 (2015)
  • S. Rentrop, B. Abendroth, J. Walter, J. Rensberg, R. Strohmeyer, H. Stöcker, C. Ronning, S. Gemming, and D. C. Meyer, Stoichiometry variation for the atomic layer deposition of SrxTiyOz from Sr(iPr3Cp)2 , Ti[N(CH3)2]4 and H2O, Thin Solid Films 577, 134-142 (2015)
  • F. Hanzig, J. Hanzig, E. Mehner, C. Richter, J. Vesely, H. Stöcker, B. Abendroth, M. Motylenko, V. Klemm, D. Novikov, and D. C. Meyer, Crystallization dynamics and interface stability of strontium titanate thin films on silicon, Journal of Applied Crystallography 48, 393-400 (2015)
  • F. Hanzig, H. Mähne, J. Veselý, H. Wylezich, S. Slesazeck, A. Leuteritz, M. Zschornak, M. Motylenko, V. Klemm, T. Mikolajick, and D. Rafaja, Effect of the stoichiometry of niobium oxide on the resistive switching of Nb2O5 based metal-insulator-metal stacks, Journal of Electron Spectroscopy and Related Phenomena 202, 122–127 (2015)
  • H. Wylezich, H. Mähne, A. Heinrich, S. Slesazeck, J. Rensberg, C. Ronning, P. Zahn, and T. Mikolajick, Adjusting the forming step for resistive switching in Nb2O5 by ion irradiation, J. Vac. Sci. Tech. B 33, 01A105 (2015)
  • A. Bogusz, D. Blaschke, D. Bürger, O. G. Schmidt, and H. Schmidt, Morphological transformations of top electrodes on YMnO3 caused by filamentary resistive switching in the oxide matrix, Adv. Mat. Res. 1101, 120-123 (2015)
  • H. Schmidt, T. Mikolajick, R. Waser, and E. Linn, Neuartige, lernfähige Memristor-Logik: Big Data ohne Energiekollaps, Physik in unserer Zeit 46, 84–89, (2015) (invited)
  • N. Du, M. Kiani, C. Mayr, R. Schüffny, T. You, D. Bürger, I. Skorupa, O. G. Schmidt, and H. Schmidt, One single pairing spike-timing dependent plasticity in BiFeO3 memristors with a time window of 25ms to 125μs, Front. Neurosc. 9, 227 (2015)
  • Y. Wang, Y. Liu, G. Wang, W. Anwand, C.A. Jenkins, E. Arenholz, F. Munnik, O.D. Gordan, G. Salvan, D.R.T. Zahn, X. Chen, S. Gemming, M. Helm, S. Zhou, Carbon p Electron Ferromagnetism in Silicon Carbide, Scientific Reports 5, 8999 (2015)
  • Wang, Y.; Liu, Y.; Wendler, E.; Hübner, R.; Anwand, W.; Wang, G.; Chen, X.; Tong, W.; Yang, Z.; Munnik, F.; Bukalis, G.; Chen, X.; Gemming, S.; Helm, M.; Zhou, S., Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism, Physical Review B 92, 174409 (2015)
  •  2014 

  • H. Mähne, H. Wylezich, F. Hanzig, S. Slesazeck, D. Rafaja, and T. Mikolajick, Analog resistive switching behavior of Al/Nb2O5/Al device, Semicond. Sci. Technol. 29, 104002 (2014)
  • A. Bogusz, D. Blaschke, I. Skorupa, A. Scholz, D. Bürger, O. G. Schmidt, and H. Schmidt, Influence of substrate on resistive switching behavior of YMnO3 films in bottom-top contact configuration, 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (2014)
  • A. Bogusz, A. D. Müller, D. Blaschke, I. Skorupa, D. Bürger, A. Scholz, O. G. Schmidt, and H. Schmidt, Resistive switching in polycrystalline YMnO3 thin films, AIP Advances 4, 107135 (2014);
  • Y. Wang, L. Li, S. Prucnal, X. Chen, W. Tong, Z. Yang, F. Munnik, K. Potzger, W. Skorupa, S. Gemming, M. Helm, and S. Zhou, Disentangling defect-induced ferromagnetism in SiC, Phys. Rev. B 89, 014417 (2014)
  • H. Wylezich, H. Mähne, J. Rensberg, C. Ronning, P. Zahn, S. Slesazeck, and T. Mikolajick, Local Ion Irradiation-Induced Resistive Threshold and Memory Switching in Nb2O5/NbOx Films, ACS Applied Materials and Interfaces 6, 17474 (2014)
  • T. You, N. Du, S. Slesazeck, T. Mikolajick, G. Li, D. Bürger, I. Skorupa, H. Stöcker, B. Abendroth, A. Beyer, K. Volz, O. G. Schmidt, and H. Schmidt, Bipolar Electric-Field Enhanced Trapping and Detrapping of Mobile Donors in BiFeO3 Memristors, ACS Applied Materials & Interfaces 6, 19758-19765 (2014)
  • L. Jin, Y. Shuai, X. Ou, P. F. Siles, H. Z. Zeng, T. You, N. Du, D. Bürger, I. Skorupa, S. Zhou, W. B. Luo, C. G. Wu, W. L. Zhang, T. Mikolajick, O. G. Schmidt, and H. Schmidt, Resistive switching in unstructured, polycrystalline BiFeO3 thin films with downscaled electrodes, Physica Status Solidi A 211, 2563–2568 (2014)
  • H. Stöcker, M. Zschornak, C. Richter, J. Hanzig, F. Hanzig, A. Hinze, K. Potzger, S. Gemming, and D.C. Meyer, Surface-near modifications of SrTiO3 local symmetry due to nitrogen implantation investigated by grazing incidence XANES, Scripta Materialia 86, 1-4 (2014)
  • N. Du, N. Manjunath, Y. Shuai, D. Bürger, I. Skorupa, R. Schüffny, C. Mayr, D. N. Basov, M. Di Ventra, O. G. Schmidt, and H. Schmidt, Novel implementation of memristive systems for data encryption and obfuscation, J. Appl. Phys. 115, 124501 (2014)
  • T. You, Y. Shuai, W. Luo, N. Du, D. Bürger, I. Skorupa, R. Hübner, S. Henker, C. Mayr, R. Schüffny, T. Mikolajick, O. G. Schmidt, and H. Schmidt, Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics, Advanced Functional Materials 24, 3357–3365 (2014)
  • V. Rana and R. Waser, Redox-Based Memristive Devices, in Ronald Tetzlaff (ed.), Memristors and Memristive Systems, Springer (2014)
  • M. Liu, M. Wagner, J. Zhang, A. McLeod, S. Kittiwatanakul, Z. Fei, E. Abreu, M. Goldflam, A. J. Sternbach, S. Dai, K. G. West, J. Lu, S. A. Wolf, R. D. Averitt and D. N. Basov, Symmetry breaking and geometric confinement in VO2: Results from a three-dimensional infrared nano-imaging, J. Appl. Phys. 104, 121905 (2014)
  • S. Rentrop, T. Moebus, B. Abendroth, R. Strohmeyer, A. Schmid, T. Weling, J. Hanzig, F. Hanzig, H. Stöcker, and D. C. Meyer, Atomic layer deposition of strontium titanate films from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O, Thin Solid Films 550, 53-58 (2014)
  • S. Slesazeck, A. Ascoli, H. Mähne, R. Tetzlaff, and T. Mikolajick, Unfolding the Threshold Switching Behavior of a Memristor, in V.M. Mladenov and P.Ch. Ivanov (Eds.), Nonlinear Dynamics of Electronic Systems, Communications in Computer and Information Science 438, 156-164 (2014)
  • S. Zhou, Defect-induced ferromagnetism in semiconductors: a controllable approach by particle irradiation, Nuclear Instruments and Methods in Physics Research B 326, 55-60 (2014)
  • Y. Wang, P. Pochet, C. A. Jenkins, E. Arenholz, G. Bukalis, S. Gemming, M. Helm, and S. Zhou, Defect-induced magnetism in graphite through neutron irradiation, Phys. Rev. B 90, 214435 (2014)
  • Y. Wang, X. Chen, L. Li, A. Shalimov, W. Tong, S. Prucnal, F. Munnik, Z. Yang, W. Skorupa, M. Helm, and S. Zhou, Structural and magnetic properties of irradiated SiC, J. Appl. Phys. 115, 17C104 (2014)
  •  2013 

  • H. Mähne, H. Wylezich, S. Slesazeck, T. Mikolajick, J. Vesely, V. Klemm, and D. Rafaja, Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect, 5th IEEE International Memory Workshop (IMW) (2013)
  • S. V. Kalinin and N. A. Spaldin, Functional Ion Defects in Transition Metal Oxides, Science 341, 858 (2013)
  • A. Grünebohm, P. Entel, and C. Ederer, First-principles investigation of incipient ferroelectric trends of rutile TiO2 in bulk and at the (110) surface, Phys. Rev. B 87, 054110 (2013)
  • U. Aschauer, R. Pfenninger, S. M. Selbach, T. Grande, and N. A. Spaldin, Strain-controlled oxygen vacancy formation and ordering in CaMnO3, Phys. Rev. B 88, 054111 (2013)
  • G.S. Park, Y.B. Kim, S.Y. Park, X.S. Li, S. Heo, M.J. Lee, M. Chang, J.H. Kwon, M. Kim, R. Dittmann, and R. Waser, K. Kim, In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure, Nature Communications 4, 2382 (2013)
  • I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, and R. Waser, Nanobatteries in redox-based resistive switches require extension of memristor theory, Nature Communications , published online April 23 (2013), PDF and Tutorial by E. Linn (internal use)
  • C. Rodenbücher, S. Wicklein, R. Waser, and K. Szot, Insulator-to-metal transition of SrTiO3:Nb single crystal surfaces induced by Ar+ bombardment, Appl. Phys. Lett. 102, 101603 (2013)
  • M. Reiners, K. Xu, N. Aslam, A. Devi, R. Waser, and S. Hoffmann-Eifert, Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium, Chemistry of Materials 25, 2934–2943 (2013)
  • F. Lentz, B. Rösgen, V. Rana, D. Wouters, and R. Waser, Current Compliance Dependent Non-linearity in TiO2 ReRAM Devices, IEEE Electr. Dev. Lett. (EDL) 34, 996 - 998 (2013)
  • M. Rogala, Z. Klusek, C. Rodenbücher, R. Waser, and K. Szot, Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching, Applied Physics Letters 102, 131604 (2013)
  • X. Ou, Y. Shuai, W. Luo, P. F. Siles, R. Kögler, J. Fiedler, H. Reuther, S. Zhou, R. Hübner, S. Facsko, M. Helm, T. Mikolajick, O. G. Schmidt, and H. Schmidt, Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts, ACS Applied Materials & Interfaces 23, 12764-12771 (2013)
  • D. Blaschke, P. Zahn, I. Skorupa, B. Scheumann, A. Scholz, S. Gemming, and K. Potzger, Resistive Switching in thermally oxidized Titanium Films, IEEE Xplore, ISCDG Conference (2013)
  • A. Bogusz, T. You, D. Blaschke, A. Scholz, Y. Shuai, W. Luo, N. Du, I. Skorupa, O. G. Schmidt, and H. Schmidt, Resistive switching in thin multiferroic films, IEEE Xplore, ISCDG Conference (2013)
  • B. Abendroth, T. Moebus, S. Rentrop, R. Strohmeyer, M. Vinnichenko, T. Weling, H. Stöcker, and D. C. Meyer, Atomic layer deposition of TiO2 from tetrakis(dimethylamino)titanium and H2O, Thin Solid Films 545, 176-182 (2013)
  • J. Hanzig, M. Zschornak, F. Hanzig, E. Mehner, H. Stöcker, B. Abendroth, C. Röder, A. Talkenberger, G. Schreiber, D. Rafaja, S. Gemming, and D. C. Meyer, Migration-induced field-stabilized polar phase in strontium titanate single crystals at room temperature, Phys. Rev. B 88, 024104 (2013)
  • M. K. Liu, M. Wagner, E. Abreu, S. Kittiwatanakul, A. McLeod, Z. Fei, M. Goldflam, S. Dai, M. M. Fogler, J. Lu, S. A. Wolf, R. D. Averitt, and D. N. Basov, Anisotropic Electronic State via Spontaneous Phase Separation in Strained Vanadium Dioxide Films, Phys. Rev. Lett. 111, 096602 (2013), PDF (Internal Use)
  • Y. Shuai, N. Du, X. Ou, W.B. Luo, S. Zhou, O. G. Schmidt, and H. Schmidt, Improved retention of nonvolatile bipolar BiFeO3 resistive memories validated by memristance measurements, Phys. stat. sol. C 10, 636-639 (2013)
  • Y. Shuai, X. Ou, W. Luo, A. Mücklich, D. Bürger, S. Zhou, C. Wu, Y. Chen, W. Zhang, M. Helm, T. Mikolajick, O. G. Schmidt, and H. Schmidt, Key concepts behind forming-free resistive switching incorporated with rectifying transport properties, Scientific Reports 3, 2208 (2013)
  • F. Gunkel, K. Skaja, A. Shkabko, R. Dittmann, S. Hoffmann-Eifert, and R. Waser, Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces, Appl. Phys. Lett. 102, 071601 (2013)
  • O. Kavehei, E. Linn, L. Nielen, S. Tappertzhofen, E. Skafidas, I. Valov, and R. Waser, An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing, Nanoscale 5, 5119 (2013)
  • D. J. Keeble, S. Wicklein, L. Jin, C. L. Jia, W. Egger, and R. Dittmann, Nonstoichiometry accommodation in SrTiO3 thin films studied by positron annihilation and electron microscopy, Phys. Rev. B 87, 195409 (2013)
  • A. Köhl, D. Kajewski, J. Kubacki, C. Lenser, R. Dittmann, P. Meuffels, K. Szot, R. Waser, and J. Szade, Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition, Phys. Chem. Chem. Phys. 15, 8311–8317 (2013)
  • Ch. Lenser, Z. Connell, A. Kovács, R. Dunin-Borkowski, A. Köhl, R. Waser, and R. Dittmann, Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO3, Appl. Phys. Lett. 102, 183504 (2013),
  • Y. Shuai, X. Ou, W. Luo, N. Du, C. Wu, W. Zhang, D. Bürger, C. Mayr, R. Schüffny, S. Zhou, M. Helm, and H. Schmidt, Nonvolatile Multilevel Resistive Switching in Ar+ Irradiated BiFeO3 Thin Films, IEEE Electr. Dev. Lett. 34, 54-56 (2013)
  • W. B. Luo, J. Jing, Y. Shuai, J. Zhu, W. L. Zhang, S. Zhou, S. Gemming, N. Du, and H. Schmidt, Epitaxial growth of SrTiO3 (0 0 1) films on multilayer buffered GaN (0002) by pulsed laser deposition, J. Phys. D: Appl. Phys. 46, 065307 (2013)
  • W. B. Luo, J. Zhu, C. G. Wu, Y. Shuai, W. L. Zhang, Y. Zhang, S. Zhou, S. Gemming, and H. Schmidt, Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002), J. Appl. Phys. 113, 154103 (2013)
  • N. Du, Y. Shuai, W. Luo, C. Mayr, R. Schüffny, O. G. Schmidt, and H. Schmidt, Practical guide for validated memristance measurements, Rev. Sci. Instrum. 86, 023903 (2013), PDF (internal use)
  •  2012 

  • C. Lenser, A. Kuzmin, J. Purans, A. Kalinko, R. Waser, and R. Dittmann, Probing the oxygen vacancy distribution in resistive switching Fe-SrTiO3 metal-insulator-metal-structures by micro-x-ray absorption near-edge structure, J. of Appl. Phys. 111, 076101 (2012)
  • S. Hoffmann-Eifert, M. Reiners, and R. Waser, ALD grown functional oxide layers for nonvolatile resistive switching memory applications, ECS transactions 50, 9-14 (2012)
  • S. Tappertzhofen, H. Mündelein, I. Valov, and R. Waser, Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide, Nanoscale 4, 3040–3043 (2012)
  • T. Tsuruoka, K. Terabe, T. Hasegawa, I. Valov, R. Waser, and M. Aono, Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches, Adv. Func. Mat. 22, 70–77 (2012)
  • I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov, M. Aono, and R. Waser, Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces, Nature Materials 11, 530–535 (2012)
  • S. Wicklein, A. Sambri, S. Amoruso, X. Wang, R. Bruzzese, A. Koehl, and R. Dittmann, Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry, Appl. Phys. Lett. 101, 131601 (2012)
  • C. Mayr, P. Stärke, J. Partzsch, R. Schüffny, L. Cederström, Y. Shuai, N. Du, and H. Schmidt, Waveform Driven Plasticity in BiFeO3 Memristive Devices: Model and Implementation, in P. Bartlett et al.(eds.), Advances in Neural Information Processing Systems XXV, 1709-1717 (2012)
  • H. Mähne, L. Berger, D. Martin, V. Klemm, S. Slesazeck, S. Jakschik, D. Rafaja, and T. Mikolajick, Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films, Solid State Electronics 72, 73-77 (2012)
  • L. Berger, H. Mähne, V. Klemm, A. Leuteritz, T. Mikolajick, and D. Rafaja, Thermally activated crystallization of Nb2O5 grown on Pt electrode, Appl. Phys. A 108, 431 (2012)
  • G. Z. Cohen, Y. V. Pershin, and M. Di Ventra, Second and higher harmonics generation with memristive systems, Appl. Phys. A 100, 133109 (2012)
  • Q. Xu, Z. Wen, Y. Shuai, D. Wu, S. Zhou, and H. Schmidt, Forming-Free Unipolar Resistive Switching in BiFe0.95Co0.05O3 Films, J. of Supercond. Novel Magn. 25, 1679-1682 (2012)
  • Shuai, Y.; Ou,X.; Wu, C.; Zhang, W.; Zhou, S.; Bürger, D.; Reuther, H.; Slesazeck, S.; Mikolajick, T.; Helm, M. & Schmidt, H.; Substrate effect on the resistive switching in BiFeO3 thin films, J. Appl. Phys. 111, 07D906 (2012)

Patents

  • Schmidt, H.; You, T.; Du, N.; Bürger, D.; Skorupa, I., Komplementärer Widerstandsschalter, dessen Herstellung und Verwendung,
    Patent DE102013200615 (17.07.2014)
  • Schmdit, H.; Kolitsch, A.; Manjunath, N.; Ou, X.; Shuai, Y.; Skorupa, I.; You, T.; Bürger, D.; Du, N.; Komplementärer Widerstandsschalter, Kontaktierte Polykristalline Piezo- oder Ferroelektrische Dünnschicht, Verfahren zum Verschlüsseln einer Bitfolge,
    Patent WO2014111481A3, PCT/EP2014/050829 (24.07.2014)
  • Schmidt, H.; Selvaraj, L.; Boguzs, A.; Bürger, D.; Prucnal, S.; Skorupa, I., Kapazitätsdiode, Verfahren zum Herstellen einer Kapazitätsdiode, sowie Speicher und Detektor mit einer solchen Kapazitätsdiode,
    Patent DE102014105639 (13.01.2015)

Conferences/Workshops organized by MEMRIOX partners

  • 12. Workshop Arbeitskreis Materialien für nichtflüchtige Speicher, Universität Magdeburg, May 10, 2016,
    organized by T. Mikolajick (NaMLab),
    talk by H. Schmidt (TUC)
  • DPG Spring Meeting, Focus sessions 'Resistive effects I-II', Regensburg, Mar 06-11, 2016,
    organized by S. Gemming (HZDR) and P. Zahn (HZDR),
    talks by K. Skaja (FZJ), A. Bogusz, N. Du (TUC), poster by Lokamani (HZDR)
  • 11. Workshop Arbeitskreis Materialien für nichtflüchtige Speicher, Universität Bielefeld, Apr 22, 2015,
  • Workshop Arbeitskreis Materialien für nichtflüchtige Speicher, Technische Universität Chemnitz (TUC), Apr 29, 2014,
    organized by T. Mikolajick (NaMLab),
    talk by H. Schmidt (TUC)
  • DPG Spring Meeting, Focus session 'Resistive switching by redox and phase change phenomena' I-VII, Dresden, Mar 10-15, 2014,
    organized by R. Waser (FZJ) and M. Wuttig (RWTH Aachen),
    talks by M. Hopfe, T. Barth, J. Rensberg (FSU), R. Dittmann (FZJ), D. Blaschke (HZDR), S. Rentrop (TUBAF), A. Bogusz, L. Zhang, T. You, N. Du, H. Schmidt (TUC), posters by X. Yuan, D. Bürger (TUC)
  • Novel High-k Application Workshop 2014, Dresden, Mar 24, 2014,
    organized by T. Mikolajick (NaMLab),
    talks by S. Slesazeck (NaMLab) and T. Mikolajick (NaMLab)
  • 1st International Freiberg Conference on Electrochemical Energy Storage Materials (ESTORM), Freiberg, Jun 03-04, 2013,
    organized by B. Abendroth, D.-C. Meyer (TUBAF)
  • Workshop Arbeitskreis Materialien für nichtflüchtige Speicher, Christian-Albrechts-Universität (CAU) zu Kiel, Apr 24, 2013,
    organized by T. Mikolajick (NaMLab),
    talk by H. Schmidt (TUC)
  • 21st Annual Conference of the German Crystallographic Society (DGK) 2013, Freiberg, Mar 19-23, 2013,
    organized by B. Abendroth, D.-C. Meyer (TUBAF),
    talks by J. Hanzig, H. Stöcker, B. Abendroth, F. Hanzig, S. Gemming
  • DPG Spring Meeting, Dedicated session DS 34 'Resistive Switching', Regensburg, Mar 10-15, 2013,
    organized by H. Schmidt (TUC), S. Gemming (HZDR),
    talks by D. Blaschke (HZDR), A. Bogusz, N. Du, T. You (TUC), H. Wylezich (NaMLab), S. Rentrop (TUBAF), B. Rössler, J. Rensberg, S. Vatterodt (FSU), posters by S. Rentrop, F. Hanzig (TUBAF), S. Gemming (HZDR)
  • Novel High-k Application Workshop 2013, Dresden, Mar 06, 2013,
    organized by T. Mikolajick (NaMLab), talk by H. Wylezich (NaMLab)
  • 1st NanoSaxony Scientific Symposium (supported by Agilent Technologies), Chemnitz, Dec 11, 2012,
    organized by H. Schmidt (TUC), talk by H. Schmidt (TUC)
  • Materials Science and Engineering 2012 – Symposium on Nanoscale Transport, Darmstadt, Sep 24-26, 2012,
    organized by P. Zahn, S. Gemming (HZDR)
  • 12th AVS-ALD Conference, Dresden, Jun 17-20, 2012,
    organized by T. Mikolajick (NaMLab)
  • nature Conference: Frontiers in Electronic Materials – Correlation Effects and Memristive Phenomena, Aachen, Jun 17-20, 2012,
    organized by R. Waser (FZJ)
  • DPG Spring Meeting, Symposium SYRS “Resistive Switching”, Berlin, Mar 29, 2012,
    organized by R. Dittmann (FZJ), S. Gemming (HZDR)
  • DPG Spring Meeting, dedicated sessions, Berlin, Mar 29-30, 2012,
    organized by R. Dittmann (FZJ), S. Gemming (HZDR)
  • Subtherm-Workshop, Dresden, Oct 25-27, 2011,
    organized by H. Schmidt (HZDR/TUC)

MEMRIOX Contributions at conferences and workshops

     2016 

  • Heidemarie Schmidt, T. You, N. Du, D. Bürger, I. Skorupa, T. Mikolajick, and O.G. Schmidt, Bismuth Ferrite Thin Films with Mobile and Fixed Donnors for Novel Memory Applications (Talk), CIMTEC 2016, June 5-9, 2016, Perugia, Italy
  • Talks/Posters at the DPG Spring Meeting (Condensed Matter Section), March 2016, Regensburg, DE:
    Nan Du, Tiangui You, Mahdi Kiani, Christian Mayr, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmidt, Energy-efficient and fast BiFeO3-based artificial synapses with a time window of 25ms to 125μs (contributed talk)
    Katharina Skaja, Christoph Bäumer, Oliver Peters, Stephan Menzel, Marco Moors, Hongshu Du, Manuel Bornhöfft, Chun-Lin Jia, Joachim Mayer, Rainer Waser, and Regina Dittmann, Avalanche-discharge-induced electrical forming in Ta2O5 based MIM structures (contributed talk)
    Agnieszka Bogusz, Daniel Blaschke, Barbara Abendroth, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt, Bipolar resistive switching of p-YMnO3/n-SrTiO3:Nb junctions (contributed talk)
  • Heidemarie Schmidt, Implementing Associative, Supervised, Unsupervised, and Deep Learning in Analog Resistive Switches for Future Information Processing and Data Mining (Invited Talk), Artificial Intelligence, Knowledge Engineering and Data Bases (AIKED '16), Jan 29, 2016, Venice, Italy
  •  2015 

  • Jura Rensberg et al., Metasurfaces based on artificially induced phase coexistence in phase-change materials, Conference on novel optical materials and applications (NOMA), Boston, 27.06 – 01.07.2015, (contributed talk)
  • Jura Rensberg et al., Metasurfaces based on defect-engineered phase-change materials, Fall meeting of the Materials Research Society (MRS), Boston, 29.11 – 04.12.2015, (contributed talk)
  • Suyan Zhang et al., Tunable Metasurfaces Based on Selective Modification of Phase Change Materials, Fall meeting of the Materials Research Society (MRS), Boston, 29.11 – 04.12.2015 (contributed talk)
  • Heidemarie Schmidt, Implantation-based control of mobile and fixed donors in BiFeO3 thin films with More-than-MOORE functionalities (Talk), Shanghai Institute of Microsystem and Information Technology (SIMIT), Aug 31, 2015, Shanghai, China
  • Heidemarie Schmidt, More-than-Memory functionalities of memristive BiFeO3 thin film structures (invited Talk), TU Dresden, Fakultät Elektrotechnik und Informationstechnik, May 5, 2015, Dresden, Germany
  • Heidemarie Schmidt, More-than-Moore functionalities of multiferroic BiFeO3 MIM structures (invited Talk), Univ. of California at San Diego, Department of Physics, April 15, 2015, San Diego, CA, US
  • Heidemarie Schmidt, Enhanced functionalities of integrated circuits enabled by memristive BiFeO3 structures (Talk), MRS Spring Meeting, April 6-10, 2015, San Francisco, CA, US
  • Talks/Posters at the DPG Spring Meeting (Condensed Matter Section), March 2015, Berlin, DE:
    Thomas Mikolajick and Walter Weber, Silicon Nanowire Devices and Applications (invited talk - Hauptvortrag)
    Daniel Blaschke et al., Tailoring the electrical properties of a TiO2 layer by ion-beam irradiation for memristive applications (contributed talk)
    Agnieszka Bogusz et al., Resistive switching of polycrystalline, multiferroic YMnO3 thin films (contributed talk)
    Agnieszka Bogusz et al., YMnO3 - based MIS structure with a selective, capacitive photo-detecting properties (contributed talk)
    Kefeng Li et al., Field effect transistors with a BiFeO3/Si3N4 gate (contributed talk)
    Tiangui You et al., BiFeO3-based resistive switching cells with flexible rectifying contact (contributed talk)
    Daniel Blaschke et al., Structural and electrical characterization of Ar+ irradiated TiO2 thin films (poster)
    Alexander Tille, Tim Barth, Jura Rensberg, and Carsten Ronning, Growth and Modification of single-crystalline VO2 Nanostructures (poster)
    Solveig Rentrop et al., Modification of resistive switching of TiO2 by noble gas ion implantation (poster)
    N. Du et al., A memristor-based hardware cryptography (poster)
  •  2014 

  • H. Schmidt, Implementation of the new hardware material BiFeO3 in neuromorphic computers (invited Talk), Seminar, Jun 16, 2014, Otto-von-Guericke-Universität Magdeburg, Department of Experimental Physics/Material Physics, DE
  • Heidemarie Schmidt, Enabling shift from software-based to more hardware-based computing (invited), 1st Helmholtz-Bosch Research Day, May 06, 2014, Stuttgart, DE
  • Talks at the DPG Spring Meeting (Condensed Matter Section), April 2014, Dresden, DE:
    Heidemarie Schmidt, Smart multiferroic thin films for cognitive computing (invited)
    Regina Dittmann, Nanoscale redox-processes in resistive switching oxide devices (invited)
  • L. P. Selvaraj, T. You, V. John, H. Zheng, D. Bürger, I. Skorupa, A. Lawerenz, K. Ettrich, O.G. Schmidt, and H. Schmidt, BiFeO3-coated photocapacitive MIS diodes with added non-volatile functionality (Talk), 8th Workshop Ellipsometry WSE 2014, March 10-12, 2014, Dresden, Germany
  • O.S. Choudhary, A. Bogusz, L. Selvaraj, V. John, D. Bürger, I. Skorupa, A. Lawerenz, K. Ettrich, O.G. Schmidt, and H. Schmidt, YMnO3-based photocapacitive detectors in the visible light regime (Poster), 8th Workshop Ellipsometry WSE 2014, March 10-12, 2014, Dresden, Germany
  •  2013 

  • Heidemarie Schmidt, IBM – Helmholtz Innovation Meeting on Energy and Health, Oct 15, 2013, Böblingen, DE
  • Heidemarie Schmidt, Spin-polarized charge carriers in ferroelectric oxides, ferromagnetic metals, magnetic oxides, and amorphous nanonets (Invited Talk), BIT’s 3rd Annual World Congress of NanoScience & Technology, Sept 2013, Xi’an, China
  • Nan Du, Multiple harmonics generation in BiFeO3 memristors (Talk), BIT’s 3rd Annual World Congress of NanoScience & Technology, Sept 2013, Xi’an, China
  • Heidemarie Schmidt, How close is the spin-polarization in multiferroic oxides, ferromagnetic metals, magnetic oxides, and amorphous nanonets to application? (Talk), Institute colloquium, University of Electronic Science and Technology China (UESTC), Sept 23, 2013, Chengdu, China
  • D. Blaschke, P. Zahn, I. Skorupa, B. Scheumann, A. Scholz, S. Gemming, and K. Potzger, Resistive Switching in thermally oxidized Titanium Films (Poster), CECAM-Workshop 'Functional oxides for emerging technologies', Oct 2013, Bremen, DE
  • A. Bogusz et al., Resistive switching in thin multiferroic films (Talk), International Semiconductor Conference Dresden - Grenoble (ISCDG), Sept 2013, Dresden, DE
  • D. Blaschke et al., Resistive Switching in thermally oxidized Titanium Films (Talk), International Semiconductor Conference Dresden - Grenoble (ISCDG), Sept 2013, Dresden, DE
  • W. Skorupa, L. Rebohle, and H. Schmidt, BFO auf Wafer-Niveau für neue Widerstandsspeicher und neuromorphe Chips (Talk), 8. Innovationstag Silicon Saxony & GWT-TUD GmbH, Sept 2013, Dresden, DE
  • P. Zahn, S. Gemming, K. Potzger, H. Schmidt, T. Mikolajick, S. Slesazeck, H. Stöcker, B. Abendroth, D.C. Meyer, R. Dittmann, V. Rana, R. Waser, C. Ronning, N.A. Spaldin, and D. Basov, Memory Effects in Resistive Ion-beam Modified Oxides (Poster), EMRS Spring Meeting, May 2013, Strasbourg, FR
  • Heidemarie Schmidt, A new approach to talented reconfigurable nonvolatile logics (Talk), Arbeitskreis Materialien für nichtflüchtige Speicher, April 24, 2013, CAU Kiel, DE
  • Daniel Blaschke, Ilona Skorupa, Bernd Scheumann, Andrea Scholz, Peter Zahn, Sibylle Gemming, Kay Potzger, Agnieszka Bogusz, and Heidemarie Schmidt, Resistive Switching in thermally oxidized Titanium (talk), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Agnieszka Bogusz, Ilona Skorupa, Andrea Scholz, Oliver G. Schmidt, and Heidemarie Schmidt, Non-volatile resistive switching in multiferroic YMnO3 thin films (talk), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Tiangui You, Wenbo Luo, Yao Shuai, Nan Du, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmid, Influence of thickness ratio on resistive switching in BiFeO3:Ti/BiFeO3 bilayer structures (talk), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Helge Wylezich, Hannes Mähne, Daniel Blaschke, Stefan Slesazeck, and Thomas Mikoljiack, Creating an Oxygen Gradient in Nb2O5 by Argon Irradiation for Resistive Switching Memory (talk), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Solveig Rentrop, Barbara Abendroth, Theresa Moebus, Ralph Strohmeyer, Alexander Schmid, and Dirk C. Meyer, Atomic Layer deposition of TiO2 from TDMAT and H2O: Evolution of microstructure and resulting resistance switching characteristics (talk), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Jura Rensberg, Benjamin Roessler, Christian Katzer, Frank Schmidl, and Carsten Ronning, Resistive switching properties in ion beam modified SrTiO3 (talk), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Nan Du, Yao Shuai, Wenbo Luo, Christian Mayr, Rene Schüffny, Oliver G. Schmidt, and Heidemarie Schmidt, Practical guide for validated memristance measurements (Talk DS 34.6), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • S. Gemming, D. Blaschke, K. Potzger, P. Zahn, A. Bogusz, H. Schmidt, T. Mikolajick, S. Slesazeck, H. Wylezich, B. Abendroth, D.C. Meyer, S. Rentrop, R. Dittmann, K. Skaja, R. Waser, J. Rensberg, C. Ronning, N.A. Spaldin, and D. Basov, Memory Effects in Resistive Ion-beam Modified Oxides (poster), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • S. Rentrop, B. Abendroth, H. Stöcker, A. Schmid, and D.C. Meyer, Atomic layer deposition of TiO2 and resulting resistance switching characteristics (Poster DS 32.3), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Benjamin Rössler, Jura Rensberg, Frank Schmidl, and Carsten Ronning, Structural and resistive switching properties of SrTiO3 deposited by RF sputtering (Poster DS 12.6), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Sebastian Vatterodt, Jura Rensberg, Danilo Bürger, Heidemarie Schmidt, and Carsten Ronning, Electrical and optical properties of tungsten doped VO2 thin films (poster), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Florian Hanzig, Carsten Richter, Juliane Hanzig, Erik Mehner, Hartmut Stöcker, Barbara Abendroth, and Dirk C. Meyer, Temperature and time dependent in-situ crystallization of strontium titanate thin films (Poster DS 13.13), DPG Spring Meeting, Mar 2013, Regensburg, DE
  • Helge Wylezich, Hannes Mähne, Daniel Blaschke, Stefan Slesazeck, and Thomas Mikoljiack, Creating an Oxygen gradient in Nb2O5 by Argon irradiation for Resistive Switching (talk), Novel High-k Application Workshop 2013, Mar 2013, Dresden, DE
  •  2012 

  • Heidemarie Schmidt, Studying Subsurface Permittivity of Metals by Scanning Microwave Microscopy (Talk), 1st NanoSaxony Scientific Symposium, Dec 1, 2012, TU Chemnitz, DE
  • Heidemarie Schmidt, Nanocrystallites in amorphous high-k oxides sensitized by impedance measurements (Invited Talk), 2012 European Conference on Electrical Measurements at the Nanoscale Using AFM, July 2012, Linz, AT
  • Helge Wylezich, Hannes Mähne, Jura Rensberg, Daniel Blaschke, Stefan Slesazeck, and Thomas Mikoljiack, Creating an oxygen gradient in Nb2O5 by Argon irradiation for Resistive Switching (Talk), 12th International Conference on Atomic Layer Deposition (ALD 2012), Jun 2012, Dresden, DE
  • Heidemarie Schmidt, Bipolares nichtflüchtiges Widerstandsschalten in BiFeO3-Dünnfilmen (Talk), Arbeitskreis Materialien für nichtflüchtige Speicher, April 24, 2012, TU Munich, DE
  • Rainer Waser, Redox-based resistive memories - recent progress (Talk SYRS 1.1), DPG Spring Meeting, March 25-30 2012, Berlin, DE
  • Solveig Rentrop, Theresa Moebus, Barbara Abendroth & Dirk C. Meyer, Atomic Layer Deposition of SrTiO3 (Poster DS 44.57), DPG Spring Meeting, March 25-30 2012, Berlin, DE
  • Nan Du, Scanning Microwave Microscopy on High-k Oxides and on Ferromagnetic Thin Films (Talk), AFM User Meeting, January 17, 2012, University Münster
  • Hippler, M.; Streit, S.; Lehmann, J.; Skorupa, I.;Helm, M.; Schmidt, H.; Lopes, J.M.J.; Schubert, J.; Mantl, S.; Huber, H.-P. & Kienberger, F.; Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow, IEEE Conference Proceedings, Semiconductor Conference Dresden, September 27-28 2011, Dresden, Germany

Relevant publications of the MEMRIOX community

  • Raab, N; Baumer, C; Dittmann, R; Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films, AIP Advances 5, 047150 (2015)
  • Lenser, C; Koehl, A; Slipukhina, I; Du, HC; Patt, M; Feyer, V; Schneider, CM; Lezaic, M; Waser, R & Dittmann, R; Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices, Adv. Func. Mat. 25, 6360 (2015)
  • W. Skorupa and H. Schmidt (eds.), Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions, Springer Series in Materials Science, Vol. 192, 2014, 252 p., 217 illus., 61 illus. in color
  • D.B. Strukov and H. Kohlstedt (eds.), Resistive switching phenomena in thin films: Materials, devices, and applications, MRS bulletin 37, Februar issue (2012)
  • Shuai, Y.; Zhou, S.; Wu, C.; Zhang, W.; Bürger, D.; Slesazeck, S.; Mikolajick, T.; Helm, M. & Schmidt, H.; Control of rectifying and resistive switching behavior in BiFeO3 thin films, Appl. Phys. Exp. 4, 095802 (2011)
  • Shuai, Y.; Zhou, S.; Bürger, D.; Helm, M. & Schmidt, H.; Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt, J. Appl. Phys. 109, 124117 (2011)
  • Shuai, Y.; Zhou, S.; Bürger, D.; Reuther, H.; Skorupa, I.; John, V.; Helm, M. & Schmidt, H., Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films, J. Appl. Phys. 109, 084105 (2011)
  • Shuai, Y.; Zhou, S.; Streit, S.; Reuther, H.; Bürger, D.; Slesazeck, S.; Mikolajick, T.; Helm, M. & Schmidt, H.; Reduced leakage current in BiFeO3 thin films with rectifying contacts, Appl. Phys. Lett. 98, 232901 (2011)

DPG Spring Meeting, March 06-11 2016, Regensburg, DE

  • Nicolas Raab, Christoph Bäumer, Karsten Fleck, Stephan Menzel, and Regina Dittmann, Impact of Cation-Stoichiometry on Switching Speed and Data Retention in SrTiO3 Thin Film Devices (contributed talk)
  • Richard Valenta, Christoph Bäumer, Christoph Schmitz, David Müller, Nicolas Raab, Slavomir Nemsak, Claus Michael Schneider, Rainer Waser, and Regina Dittmann, Resistive switching devices with ultrathin graphene top electrodes for in situ spectromicroscopic characterization (contributed talk)
  • Alexander Hardtdegen, Hehe Zhang, and Susanne Hoffmann-Eifert, Influence of Stack Order on the Forming and Switching Behavior of HfO2/TiO2 Bilayer Cells for ReRAM Applications (contributed talk)
  • Ilia Valov, Processes at the nanoscale: Recent progress in understandings on ReRAMs (topical talk)
  • Andy Thomas, Tunnel junction based memristors as artificial synapses (topical talk)
  • Konstantin Z. Rushchanskii, Stefan Blügel, and Marjana Ležaić, Metastable states of HfO2 suboxides and resistive switching (contributed talk)

DPG Spring Meeting, March 10-15 2013, Regensburg, DE

  • Ali Al-Zubi, Gustav Bihlmayer, and Stefan Blügel, Ab initio study of defects in SrTiO3 bulk and (100) surfaces (Talk DS 34.1)
  • Sebastian Wicklein, Chencheng Xu, Alessia Sambri, Salvatore Amoruso, David Keeble, Annemarie Köhl, Werner Egger, and Regina Dittmann, Cation defect engineering in SrTiO3 thin films by PLD with Verification and implication on memristive properties (Talk DS 34.3)
  • Ivetta V. Slipukhina, Konstantin Z. Rushchanskii, Stefan Blügel, and Marjana Ležaić, Electronic and magnetic properties of Ti4O7 and Ti5O9 Magnéli phases (Poster MA 16.65)

DPG Spring Meeting, March 25-30 2012, Berlin, DE

  • Dirk C. Meyer, Hartmut Stöcker, Juliane Hanzig, Florian Hanzig, Matthias Zschornak, Barbara Abendroth, and Sibylle Gemming; Electric Formation of Metal/SrTiO3 Junctions and its Correlation to Multi-Dimensional Defects (SYRS 1.2, Thu 15:30)
  • Thomas Mikolajick, Stefan Slesazeck, and Hannes Maehne; The Connecting between the Properties of Memristive Material Systems and Application Requirements (SYRS 1.3, Thu 16:00)
  • Christian Lenser, Alexei Kuzmin, Alexandr Kalinko, Juris Purans, Rainer Waser, and Regina Dittmann; Elucidation of the resistive switching in SrTiO3 MIM-structures by μXANE (DS 39.2, Fri 09:45)
  • Christian Rodenbücher, Krzysztof Szot, and Rainer Waser; Resistive switching of Nb-doped SrTiO3 single crystals (DF 16.1, Thu 11:40)
  • Chanwoo Park, Anja Herpers, Rainer Bruchhaus, Johan Verbeeck, Ricardo Egoavil, Francesco Borgatti, Giancarlo Panaccione, Francesco Offi, and Regina Dittmann; Resistive switching in different forming states of Ti/Pr0.48Ca0.52MnO3 junctions (DS 39.4, Fri 10:15)
  • Yao Shuai, Chuangui Wu, Wanli Zhang, Shengqiang Zhou, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, and Heidemarie Schmidt; Nonvolatile resistive switching in Au/BiFeO3 rectifying junction (DS 40.6, Fri 12:15)
  • Yao Shuai, Chuangui Wu, Wanli Zhang, Shengqiang Zhou, Danilo Bürger, Stefan Slesazeck, Thomas Mikolajick, Manfred Helm, and Heidemarie Schmidt; Nonvolatile resistive switching in Au/BiFeO3/Pt (Poster DS 38.9, Thu 17:30)
  • Florian Hanzig, Juliane Hanzig, Michael Franke, Hartmut Stöcker, Erik Mehner, Barbara Abendroth, and Dirk C. Meyer; Strontium Titanate Thin Film Deposition – Structural and Electronical Characterization (Poster DS 37.27, Thu 15:00)
  • Juliane Hanzig, Barbara Abendroth, Florian Hanzig, Hartmut Stöcker, and Dirk C. Meyer; Photoluminescence investigations of differently annealed and doped SrTiO3 single crystals in varying atmospheres (Poster HL 25.6, Mo 16:00)

Note to all MEMRIOX members:

Please provide the following acknowledgment in all MEMRIOX publications:
This work has been (partially) financed by the Initiative and Networking Fund of the German Helmholtz Association, Helmholtz Virtual Institute MEMRIOX (VH-VI-422).


Contact

Prof. Dr. Sibylle Gemming
Head of VI Memriox / Group leader Materials Simulation
Non-Equilibrium Thermodynamics
s.gemmingAthzdr.de
Phone: +49 351 260 - 2470
Fax: +49 351 260 - 12470

PD Dr. habil. Peter Zahn
Coordinator Helmholtz Virtual Institute MEMRIOX & International Helmholtz Research School NanoNet
p.zahnAthzdr.de
Phone: +49 351 260 - 3121
Fax: +49 351 260 - 13121