Prof. Dr. Sibylle Gemming

Phone: +49 (0) 351 260-2470

Deputy Spokesperson:
Dr. Heidemarie Schmidt

Phone: +49 (0) 371 531-32481

Dr. Peter Zahn

Phone: +49 (0) 351 260-3121

News and Events

CNNA 2016 - Memristor Workshop, Dresden, DE - program

MEMRIOX International Workshop, Berghotel Bastei, DE - Registration


The project is funded by the Initiative and Networking Fund of the Helmholtz Association (VH-VI-422).

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MEMRIOX Research Highlights

A complete list of publications can be found here.

M.K. Liu, M. Wagner, E. Abreu, S. Kittiwatanakul, A. McLeod, Z. Fei, M. Goldflam, S. Dai, M.M. Fogler, J. Lu, S.A. Wolf, R.D. Averitt, and D.N. Basov, Anisotropic Electronic State via Spontaneous Phase Separation in Strained Vanadium Dioxide Films, Phys. Rev. Lett. 111, 096602 (2013), PDF (Internal Use)

Liu2013, PRL 111, 096602, Fig.1
(a) Near-field IR images illustrating three distinct stages of the insulator-to-metal phase transition as described in the text. (b) Temperature-dependent THz conductivity (σTHz) along the [1σ10]R axis (squares) and along the [001]R axis (circles). Red (gray) and blue (black) arrows reflect directions of temperature change. Inset: crystal structure of VO2 in low temperature monoclinic [green (black) spheres] and high temperature rutile [orange (gray) spheres] phases. The shaded plane coincides with the surface of our sample film. [From Phys. Rev. Lett. 111, 096602 (2013)]

F. Gunkel, K. Skaja, A. Shkabko, R. Dittmann, S. Hoffmann-Eifert, and R. Waser, Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces, Appl. Phys. Lett. 102, 071601 (2013)

Gunkel2013, APL 101, 071601, Fig.3
High temperature equilibrium conductance (HTEC) characteristics of the NGO/STO heterostructure (filled symbols); (a) a thermally stable interface contribution is found for 850 K– 1000 K; open symbols and dashed line correspond to the bare STO substrate (950 K); (b) comparison of the HTEC of the NGO/STO heterostructure at 950K before (filled symbols) and after (open symbols) additional measurement cycles at 1050K and 1100 K; the dashed line corresponds to STO single crystal data. (Inset: XRD data before and after the HTEC measurement.) [From Appl. Phys. Lett. 101, 071601, Fig.3]

J. Hanzig, M. Zschornak, F. Hanzig, E. Mehner, H. Stöcker, B. Abendroth, C. Röder, A. Talkenberger, G. Schreiber, D. Rafaja, S. Gemming, and D.C. Meyer, Migration-induced field-stabilized polar phase in strontium titanate single crystals at room temperature, Phys. Rev. B 88, 024104 (2013)

Hanzig2013, PRB 88, 024104, Fig.7
Formation of the migration-induced field stabilized polar phase in SrTiO3 single crystals. (a) Initial state (E = 0): oxygen vacancies initiate atomic displacements. (b) Applying an electric field (E > 0): additional displacements of nearest atoms in the vicinity of an oxygen vacancy break the inversion symmetry. (c) Vacancy migration leaves a point-defect-free elongated unit cell (see orange circle) with remaining atomic displacements. (d) Traces of MFP phase are formed in turns of vacancy migration. [From Phys. Rev. B 88, 024104, Fig.7]

Nan Du, Yao Shuai, Wenbo Luo, Christian Mayr, René Schüffny, Oliver G. Schmidt, and Heidemarie Schmidt,
Practical guide for validated memristance measurements,
Rev. Sci. Instrum. 86, 023903 (2013), PDF (internal use)