Contact

Dr. Wolfgang Skorupa
Head Semiconductor Materials
w.skorupaAthzdr.de
Phone: +49 351 260 - 3612
Fax: 13612, 3411

Selected publications

Superconductivity | Si nanowires | III-V nanostructures in Silicon | Si-based photonics | Flash lamp annaeling | Nano-Spintronics


Superconductivity in heavily doped group-IV semiconductors

  • Heera, V.; Fiedler, J.; Hübner, R.; Schmidt, B.; Voelskow, M.; Skorupa, W.; Skrotzki, R.; Herrmannsdörfer, T.; Wosnitza, J.; Helm, M.
    Silicon Films with Gallium Rich Nanograins - from Superconductor to Insulator
    New Journal of Physics 15, 083022 (2013)

  • Fischer, T.; Pronin, A. V.; Skrotzki, R.; Herrmannsdörfer, T.; Wosnitza, J.; Fiedler, J.; Heera, V.; Helm, M.; Schachinger, E.
    Optical study of superconducting Ga-rich layers in silicon
    Physical Review B 87, 014502 (2013)

  • Fiedler, J.; Heera, V.; Voelskow, M.; Mücklich, A.; Reuther, H.; Skorupa, W.; Gobsch, G.; Helm, M.
    Superconducting layers by gallium implantation and short-term annealing in semiconductors
    Acta Physica Polonica A 123, 916 (2013)

  • Heera, V.; Fiedler, J.; Voelskow, M.; Mücklich, A.; Skrotzki, R.; Herrmannsdörfer, T.; Skorupa, W.
    Superconductor-insulator transition controlled by annealing in Ga implanted Si
    Applied Physics Letters 100, 262602 (2012)

  • Fiedler, J.; Heera, V.; Skrotzki, R.; Herrmannsdörfer, T.; Voelskow, M.; Mücklich, A.; Facsko, S.; Reuther, H.; Perego, M.; Heinig, K.-H.; Schmidt, B.; Skorupa, W.; Gobsch, G.; Helm, M.
    Superconducting Ga-overdoped Ge layers capped with SiO2 – structural and transport investigations
    Physical Review B 85, 134530 (2012)

  • R. Skrotzki; T. Herrmannsdörfer; V. Heera; J. Fiedler; A. Mücklich; M. Helm; J. Wosnitza
    The impact of heavy Ga doping on superconductivity in germanium
    Low Temperature Physics / Fizika Nizkikh Temperatur 37(2011), 1098-1106

  • J. Fiedler; V. Heera; R. Skrotzki; T. Herrmannsdörfer; M. Voelskow; A. Mücklich; S. Oswald; B. Schmidt; W. Skorupa; G. Gobsch; J. Wosnitza; M. Helm
    Superconducting films fabricated by high fluence Ga implantation in Si
    Physical Review B 83(2011), 214504

  • R. Skrotzki; J. Fiedler; T. Herrmannsdörfer; V. Heera; M. Voelskow; A. Mücklich; B. Schmidt; W. Skorupa; G. Gobsch; M. Helm; J. Wosnitza
    On-chip superconductivity via gallium overdoping of silicon
    Applied Physics Letters 97(2010), 192505

  • T. Herrmannsdörfer; R. Skrotzki; V. Heera; O. Ignatchik; M. Uhlarz; A. Mücklich; M. Posselt; B. Schmidt; K.-H. Heinig; W. Skorupa; M. Voelskow; C. Wündisch; M. Helm; J. Wosnitza
    Superconductivity in thin-film germanium in the temperature regime around 1 K
    Superconductor Science and Technology 23(2010), 034007

  • V. Heera; A. Mücklich; M. Posselt; M. Voelskow; C. Wündisch; B. Schmidt; R. Skrotzki; K. H. Heinig; T. Herrmannsdörfer; W. Skorupa
    Heavily Ga-doped Germanium Layers Produced by Ion Implantation and Flash Lamp Annealing - Structure and Electrical Activation
    Journal of Applied Physics 107(2010), 053508-1-053508-8

  • T. Herrmannsdörfer; V. Heera; O. Ignatchik; M. Uhlarz; A. Mücklich; M. Posselt; H. Reuther; B. Schmidt; K.-H. Heinig; W. Skorupa; M. Voelskow; C. Wündisch; R. Skrotzki; M. Helm; J. Wosnitza
    Superconducting State in a Gallium-Doped Germanium Layer at Low Temperatures
    Physical Review Letters 102(2009), 217003

Silicon nanowires

  • X. Ou, R. Kögler, X. Wei, A. Mücklich, X. Wang, W. Skorupa, S. Facsko
    Fabrication of horizontal silicon nanowire arrays on insulator by ion irradiation
    AIP Advances, 1, 042174 (2011)

  • X. Ou, Nadine Geyer, R. Kögler, P. Werner, W. Skorupa
    Acceptor deactivation in individual Si nanowires: from thick to ultrathin
    Appl. Phys. Lett. 98, 253103 (2011)

  • X. Ou, P.D. Kanungo, R. Kögler, P. Werner, U. Gösele, W. Skorupa, and X. Wang
    Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
    Advanced Materials 22, 4020-4024 (2010)

  • X. Ou, P.D. Kanungo, R. Kögler, P. Werner, U. Gösele, W. Skorupa, and X. Wang
    Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
    Nano Letters 10 (1), 171-175 (2010)

III-V nanostructures in Silicon

  • R. Wutzler, L. Rebohle, S. Prucnal, R. Hübner, S. Facsko, R. Böttger, M. Helm, and W. Skorupa
    III-V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
    Materials Science in Semiconductor Processing 42 (2016) 2, 166-169

  • R. Wutzler, L. Rebohle, S. Prucnal, F. Bregolin, R. Hübner, M. Voelskow, M. Helm, and W. Skorupa
    Liquid phase epitaxy of binary III-V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing
    J. Appl. Phys. 117(2015)17, 175307

  • S. Prucnal, M. Glaser, A. Lugstein, E. Bertagnolli, M. Stöger-Pollach, S. Zhou, M. Helm, D. Reichel, L. Rebohle, M. Turek, J. Zuk, and W. Skorupa
    III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy
    Nano Res. 7 (2014), 1769

  • S. Prucnal, S. Zhou, X. Ou, S. Facsko, M. O. Liedke, F. Bregolin, B. Liedke, J. Grebing, M. Fritzsche, R. Hübner, A. Mücklich, L. Rebohle, M. Helm, M. Turek, A. Drozdziel, and W. Skorupa
    III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
    J. Appl. Phys. 115, 074306 (2014)

  • S. Prucnal, M.O. Liedke, S. Zhou, M. Voelskow, A. Mücklich, M. Turek, J. Zuk, and W. Skorupa
    Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
    Nuclear Instruments and Methods in Physics Research B 312 (2013) 104–109

  • S. Prucnal, S. Zhou, X. Ou, H. Reuther, M. O. Liedke, A. Mücklich, M. Helm, J. Zuk, M. Turek, K. Pyszniak and W. Skorupa
    InP nanocrystals on silicon for optoelectronic applications
    Nanotechnology 23 (2012) 485204

  • S. Prucnal, S. Facsko, C. Baumgart, H. Schmidt, M.O. Liedke, L. Rebohle, A. Shalimov, H. Reuther, A. Kanjilal, A. Mucklich, M. Helm, J. Zuk, and W. Skorupa
    n-InAs nanopyramids fully integrated into silicon
    Nano Lett. 11, Issue 7, 2814-2818 (2011)

  • Prucnal, S.; Turek, M.; Drozdziel, A.; Pyszniak, K.; Wojtowicz, A.; Zhou, S.Q.; Kanjilal, A.; Shalimov, A.; Skorupa, W.; and Zuk, J.
    Optical and microstructural properties of self-assembled InAs quantum structures in silicon
    Central Europ. J. Phys. 9:2, 338-343 (2011)

  • Prucnal, S.; Turek, M.; Drozdziel, A.; Pyszniak, K.; Zhou, S.Q.; Kanjilal, A.; Skorupa, W.; and Zuk, J.
    Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing
    Appl. Phys. B 101:1-2, 315-319 (2010)

Si-based photonics

  • S.I. Tiagulskyi, A.N. Nazarov, S.O. Gordienko, A.V. Vasin, A.V. Rusavsky, T.M. Nazarova, Yu.V. Gomeniuk, G.V. Rudko, V.S. Lysenko, L. Rebohle, M. Voelskow, W. Skorupa, Y. Koshka
    Electroluminescent properties of Tb-doped carbon-enriched silicon oxide
    Semiconductor Physics, Quantum Electronics & Optoelectronics 17-1 (2014) 34-40

  • L. Rebohle, Y. Berencén, R. Wutzler, M. Braun, D. Hiller, J. M. Ramírez, B. Garrido, M. Helm and W. Skorupa
    The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments
    J. Appl. Phys. 116, 123104 (2014)

  • L. Rebohle, M. Braun, R. Wutzler, B. Liu, J. M. Sun, M. Helm, and W. Skorupa
    Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition
    Appl. Phys. Lett. 104, 251113 (2014)

  • L. Rebohle, Y. Berencén, M. Braun, B. Garrido, D. Hiller, B. Liu, J. M. Ramírez, J. M. Sun, R. Wutzler, M. Helm and W. Skorupa
    Rare Earth Doped Metal-Oxide-Semiconductor Structures: A Promising Material System or a Dead End of Optoelectronic Evolution?
    ECS Transactions 61-5, 175-185 (2014)

  • Y. Berencen, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramirez, J. A. Rodriguez, W. Skorupa, and B. Garrido
    Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices
    Applied Physics Letters 103 (2013)

  • S. Tiagulskyi, I. Tyagulskii, A. Nazarov, T.M. Nazarova, N.L. Rymarenko, V. Lysenko, L. Rebohle, J. Lehmann, W. Skorupa,
    Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOX Nanoclusters
    ECS Transactions 45:5, 161-166 (2012) 1188

  • S. Tiagulskyi, A. Nazarov, I. Tyagulskii, V. Lysenko, L. Rebohle, J. Lehmann, W. Skorupa,
    Shell model for REOx nanoclusters in amorphous SiO2: charge trapping and electroluminescence quenching
    Phys. Stat. Sol. C 9:6, 1468-1470, (2012)

  • L. Rebohle, J. Lehmann, S. Prucnal, M. Helm, and W. Skorupa
    The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared
    J. Lum. 132:12, 3151-3153 (2012)

  • L. Rebohle, A. Kanjilal, W. Skorupa, and M. Helm
    The inverse energy transfer between Ge nanocrystals and erbium in SiO2 and its dependence on microstructure
    Opt. Mat. 33, Issue 7, 1075-1078 (2011)

  • A. Kanjilal, S. Gemming, L. Rebohle, A. Mücklich, T. Gemming, M. Voelskow, W. Skorupa, and M. Helm
    Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2
    Phys. Rev. B 83, 113302 (2011)

  • C. Cherkouk, L. Rebohle, and W. Skorupa
    Bioconjugation of the estrogen receptor hER(alpha) to a quantum dot dye for a controlled immobilization on a SiO2 surface
    J. Colloid Int. Sci. 355, 442-447 (2011)

  • L. Rebohle and W. Skorupa
    Rare-Earth Implanted MOS Devices for Silicon Photonics
    Springer Series in Materials Science, Vol. 142, Springer 2010

  • A. N. Nazarov, S. I. Tiagulskyi, I. P. Tyagulskyy, V. S. Lysenko, L. Rebohle, J. Lehmann, S. Prucnal, M. Voelskow, and W. Skorupa
    The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices
    J. Appl. Phys. 107, 123112 (2010)

  • L. Rebohle, J. Lehmann, S. Prucnal, J. M. Sun, M. Helm and W. Skorupa
    Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence
    Applied Physics B 98:2 (2010) 439

  • S. Prucnal, L. Rebohle and W. Skorupa
    Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion
    Applied Physics B 98:2 (2010) 451

  • A. Kanjilal, L. Rebohle, S. Prucnal, M. Voelskow, W. Skorupa, and M. Helm
    Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO2 layers
    Physical Review B 80 (2009), 241313 (R)-1

  • A. Kanjilal, L. Rebohle, N. K. Baddela, S. Zhou, M. Voelskow, W. Skorupa, and M. Helm
    Probing the impact of microstructure on the electroluminescence properties of Ge nanocrystal enriched Er-doped SiO2 layers
    Phys. Rev. B 79, 161302(R) (2009)

  • S. Prucnal, A. Kanjilal, H. Krzyzanowska, L. Rebohle, W. Skorupa
    White electroluminescence from a gadolinium doped Si nanocluster enriched SiO2-SiON interface region
    Electrochemical and Solid State Letters 12 (2009) 9, H333

  • C. Cherkouk, L. Rebohle, W. Skorupa, T. Strache, H. Reuther, and M. Helm
    Spraying spin coating silanization at room temperature of a SiO2 surface for silicon-based integrated light emitters
    J. of Colloid and Interface Science 337 (2009) 375

  • J.M. Sun, L. Rebohle, S. Prucnal, M. Helm, W. Skorupa
    Giant stability enhancement of rare-earth implanted SiO2 light emitting devices by an additional SiON protection layer
    Appl. Phys. Lett. 92, 071103 (2008)

Flash lamp annaeling

  • T. Henke, M. Knaut, C. Hossbach, M. Geidel, L. Rebohle, M. Albert, W. Skorupa, and J.W. Bartha
    Flash-Enhanced Atomic Layer Deposition: Basics, Opportunities, Review, and Principal Studies on the Flash-Enhanced Growth of Thin Films
    ECS Journal of Solid State Science and Technology 4 (2015) 7, 277-287

  • T. Henke, M. Knaut, C. Hossbach, M. Geidel, L. Rebohle, M. Albert, W. Skorupa, and J.W. Bartha
    Flash-Lamp-Enhanced Atomic Layer Deposition of Thin Films
    ECS Transactions 64(2014)9, 167-189

  • T. Henke, J.W. Bartha, L. Rebohle, U. Merkel, R. Hübner, M. Albert, and W. Skorupa
    Formation of regularly arranged large grain silicon islands by using embedded micro mirrors in the flash crystallization of amorphous silicon
    J. Appl. Phys. 115, 034301 (2014)

  • M. Voelskow, R. Endler, T. Schumann, A. Mücklich, X. Ou, E.H. Lipack, T. Gebel, A. Peeva, W. Skorupa
    Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation
    Journal of Crystal Growth, 388 (2014) 70-75.

  • C. Brombacher, C. Schubert, M. Daniel, A. Liebig, G. Beddies, T. Schumann, W. Skorupa, J. Donges, S. Häberlein, and M. Albrecht
    Chemical ordering of FePt films using millisecond flash-lamp annealing
    J. Appl. Phys. 111, 023902 (2012)

  • D. Reichel, W. Skorupa, W. Lerch, and J. C. Gelpey
    Temperature Measurement in Rapid Thermal Processing with Focus on the Application to Flash Lamp Annealing
    Critical Reviews in Solid State and Materials Sciences, 36:102–128, 2011

  • Lehmann, J.; Shevchenko, N.; Mücklich, A.; von Borany, J.; Skorupa, W.; Schubert, J.; Lopes, J.M.J.; Mantl, S.
    Millisecond flash-lamp annealing of LaLuO(3)
    Microelectr. Eng. 88:7, 1346-1348 (2011)

  • Müller, A.; Lorenz, M.; Brachwitz, K.; Lenzner, J.; Mittwoch, K.; Skorupa, W.; Grundmann, M.; and Hoche, T.
    Fresnoite thin films grown by pulsed laser deposition: photoluminescence and laser crystallization
    CrystEngComm 13:2, 6377-6385 (2011)

  • W. Skorupa
    Advances in Si & Ge millisecond processing: From SOI to superconductivity and carrier-mediated ferromagnetism
    ECS Transactions 35:2, 193-204 (2011)

  • Talut, G.; Reuther, H.; Grenzer, J.; Mücklich, A.; Shalimov, A.; Skorupa, W.; and Stromberg, F.
    Spinodal decomposition and secondary phase formation in Fe-oversaturated GaN
    Phys. Rev. B 81:15, 155212 (2010)

  • Wundisch, C.; Posselt, M.; Schmidt, B.; Heera, V.; Schumann, T.; Mücklich, A.; Grötzschel, R.; Skorupa, W.; Clarysse, T.; Simoen, E.; and Hortenbach, H.
    Millisecond flash lamp annealing of shallow implanted layers in Ge
    Appl. Phys. Lett. 95:25, 252107 (2009)

  • Kumar, M.; Chatterjee, R.; Milikisiyants, S.; Kanjilal, A.; Voelskow, M.; Grambole, D.; Lakshmi, K. V.; Singh, J. P.
    Investigating the role of hydrogen in indium oxide tubular nanostructures as a donor or oxygen vacancy passivation center
    App. Phys. Lett. 95(2009), 013102

  • Voelskow, M.; Skorupa, W.; Pezoldt, J.; and Kups, T.
    Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing
    Nucl. Instr. Meth. B 267:8-9, 1269-1272 (2009)

  • Andreadou, A.; Pezoldt, J.; Forster, C.; Polychroniadis, E.K.; Voelskow, M.; and Skorupa, W.
    Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
    Si Carbide and related Materials, Mat. Sci. Forum 600-603, 239-242 (2009)

  • Skorupa, W.; Anwand, W.; and Gebel, T.
    Energy pulse modification of electronic materials: from electronics via photonics to other advanced materials
    Proc. ASME Int. Manufact. Sci. Eng. Conf. 2, 685-692 (2009)

  • Voelskow, M.; Yankov, R.; Kups, T.; Pezoldt, J.; Skorupa, W.
    Buried melting in germanium implanted silicon by millisecond flash lamp annealing
    App. Phys. Lett. 93(2008)15, 151903

Nano spintronics

  • Bürger, D.; Zhou, S.; Höwler, M.; Ou, X.; Kovacs, G.J.; Reuther, H.; Mücklich, A.; Skorupa, W.; Helm, M. & Schmidt, H.
    Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet
    Appl. Phys. Lett., 2012, 100, 012406-1-4; Virtual Journal of Nanoscale Science & Technology, 2012, 25 (4)

  • Mok, K.; Scarlat, C; Kovacs, G.J.; Li, L.; Zviagin, V.;  McCord, J.; Helm, M. & Schmidt, H.
    Thickness independent magneto-optical coupling constant of nickel films in the visible spectral range
    J. Appl. Phys., 2012, 110, 123110-1-4

  • Shuai, Y.; Zhou, S.; Bürger, D.; Helm, M. & Schmidt, H.
    Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt
    J. Appl. Phys., 2011, 109, 124117

  • Baumgart, C.; Müller, A.-D.; Müller F. & Schmidt H.
    Kelvin probe force microscopy in the presence of intrinsic local electric fields
    phys. stat. sol. (a), 2011, 208, 777-789 (editor’s choice)

  • Bürger, D.; Zhou, S.; Pandey, M.; Viswanadham, C. S.; Grenzer, J.; Roshchupkina, O.; Anwand, W.; Reuther, H.; Gottschalch, V.; Helm, M. & Schmidt, H.
    Application of pulsed laser annealing to ferromagnetic GaMnAs
    Phys. Rev. B, 2010, 81, 115202-1-12.

  • Baumgart, C.; Helm, M. & Schmidt, H.
    Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model
    Phys. Rev. B, 2009, 80, 085305.

Contact

Dr. Wolfgang Skorupa
Head Semiconductor Materials
w.skorupaAthzdr.de
Phone: +49 351 260 - 3612
Fax: 13612, 3411