MEMRIOX Idea by an artist's view

MEMRIOX principle
The idea of MEMRIOX: Ion-Beam induced defect engineering allows a good control of the lateral and vertical defect arrangements and concentrations. This allows for detailed investigations of the microscopic origins of the resistance change caused by an electrical current. The non-volatile resistance switch between the contact pads might be used as an information storage cell.
© by Sander Münster (www.3dkosmos.de)

URL of this article
https://www.hzdr.de/db/Cms?pOid=36270