Contact

PD Dr. habil. Artur Erbe
Abteilungsleiter
Scaling Phenomena
a.erbeAthzdr.de
Phone: +49 351 260 - 2366

Prof. Dr. Sibylle Gemming
Head of VI Memriox / Group leader Materials Simulation
Non-Equilibrium Thermodynamics
s.gemmingAthzdr.de
Phone: +49 351 260 - 2470
Fax: +49 351 260 - 12470

Equipment Scaling Phenomena

  1. Non-Equilibrium Thermodynamics
  2. Nanocomposite Materials / Multifunctional oxides
  3. Transport phenomena in nanostructures

1. Non-Equilibrium Thermodynamics

Details

IBS/IBAD - Dual ion beam deposition

IBS/IBAD - Dual ion beam deposition

  • Sputtering 3 cm 2 grid Kaufman source, ion energy 100-1200 eV
  • Plasma bridge neutralization of the sputtering beam
  • Assistance 3 cm 3 grid Kaufman source, ion energy 25-1200 eV
  • 6” target (conductive or insulating )
  • Growth rates 1-10 nm/min
  • Application
    • Thin film growth
    • Control over the film microstructure by the assisting ion beam
    • Crystalline alignment

Responsible: M. Krause, matthias.krause@hzdr.de, 0351 / 260 - 3578

High Power Impulse Magnetron sputtering setup (HiPIMS)

High Power Impulse Magnetron sputtering setup (HiPIMS)

  • 2x3 “ targets

  • Large fraction of the sputtered material is ionized

  • Application

    • Thin film/Coating growth

    • Control over the film microstructure by the energy of depositing ion

Responsible: M. Krause, matthias.krause@hzdr.de, 0351 / 260 - 3578

Cluster tool - Multifunctional UHV

Cluster tool - Multifunctional UHV

  • Radial distribution chamber (8 connection ports to other vacuum chambers)

  • In-vacuo ion beam analysis (high resolution) RBS,NRA,ERDA  at the beamline 9

  • Modification chamber: sputter cleaning, ion beam nanopatterning, etching, plasma modification, deposition; heating;

  • Analysis chamber

  • Application:

    • Multistep experiments involving sample surface modification by ion beams/plasmas, thin film growth, annealing in vacuum or gas/plasma environments + ion beamline and conventional analytics

Responsible: M. Krause, matthias.krause@hzdr.de, 0351 / 260 - 3578

Tribometer

Tribometer für oszillierenden Verschleiß mit Reibkoeffizientmessung

  • Meßbereich : 0,75 Hz-10 Hz
  • Hublänge : 2-22 mm
  • Last : 0.6-5N

Responsible: A.Schneider, a.schneider@hzdr.de, 0351 / 260 - 3094

Nanoindenter

Nanoindenter UNAT from Asmec with Scratch Modul

  • Meßbereich:1mN-1500 mN

Responsible: A.Schneider, a.schneider@hzdr.de, 0351 / 260 - 3094

Kontaktwinkelmeßgerät

Kontaktwinkelmeßgerät Krüss DSA 10

  • zum Bestimmen der Oberflächenenergie

Responsible: A.Schneider, a.schneider@hzdr.de, 0351 / 260 - 3094

Profilometer Dektak

Profilometer Dektak 8 von der Firma Veeco (gemeinsam mit FWIZ)

  • zum Messen von Stufenhöhen bis 0,2mm und Rauhigkeitsparametern

Responsible: A.Schneider, a.schneider@hzdr.de, 0351 / 260 - 3094

Dual Scope/Rasterscope

Dual Scope/Rasterscope von DME 2592/ DME Rasterscope C21

Responsible: A.Schneider, a.schneider@hzdr.de, 0351 / 260 - 3094

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2. Nanocomposite Materials / Multifunktional oxides


Details

Magnetron Sputtering Installations

Magnetron sputter systems (4 chambers), Roth&Rau

  • UHV dual magnetron systems:
    • Reactive/non-reactive sputtering
    • Magnetron target diameter: 50 and 75 mm
    • Magnetron power: PDC  ≤750 W (for 50 mm)
    • DC and medium frequency (2-150 kHz, duty cycle 0-50%) pulsed power supplies
    • 3-inch heatable substrate holder
    • Target-substrate distance: 40-100 mm
    • Substrate holder diameter: 70 mm
    • Substrate manipulator: XYZ-Theta
    • Substrate heating: BN heater (Tectra)
    • Substrate temperature: RT-600 °C
    • Base pressure (after baking): <3x10-5 Pa
    • Pumping speed control: VAT valve
    • Process gas: Ar
    • Reactive gases: O2, N2, H2
    • Gas flow controllers: MKS
    • Process pressure control: capacitance gauge (Pfeiffer), residual gas analysers, plasma emission monitor
    • Total pressure ranges: 0.3 – 2 Pa
  • Application
    • ZnO-, SnO2- and TiO2-based transparent conductive films
    • High-refractive index materials
    • Nanocomposites: ZnO/nano-Ag, etc
    • “Quantitative deposition”: fine tuning of the metal/oxygen flux ratio during film growth
    • Variable deposition geometry
    • Depositions at defined target state

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

Annealing Chamber

Annealing chamber

  • Versatile annealing system:
    • 1-inch heatable substrate holder: transferrable to external beamlines (e.g. XANES)
    • Anneling temperatures up to 900 °C
    • Annealing ambience: Ar, O2, defined pressure
    • Ports for in situ resistivity and optical properties measurements
  • Application
    • Annealing with in situ real-time characterization
    • Combination of several in situ techniques

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

Massenspektrometrie

Energy-resolved mass spectrometry (HIDEN EQP 300)

  • In situ plasma particles  characteriaztion:
    • Differentially pumped mass spectrometer
    • Particles: neutrals, positive and negative ions
    • Particles mass: ≤ 300 amu
    • Energy: ≤1 keV.
  • Application
    • Measurements of mass spectra and energy distributions of neutral particles and ions (positive and negative) emitted from the plasma and magnetron surface

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

Langmuir Probe

Impedans ALP (Henniker Scientific Ltd)

  • Automated Langmuir Probe:
    • High time resolution (~13 ns)
    • Spatial resolution: 1 mm
    • Deposition-tolerant
    • Fast sampling rates
    • High speed data acquisition: no need for low frequency reference electrode
  • Application
    • Measurements of the time and spatial distributions of the plasma parameters:
    • electron and ion density
    • electron temperature
    • plasma potential

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

OES TRIAX 320 (Jobyn Yvon GmbH, Horiba Group)

  • Optical emission spectrometry:
    • Spectral range: 250-800 nm
    • Average acquisition time/spectrum: 100 ms
    • Soller collimator
  • Application
    • In situ analysis of the optical spectrum emitted by the plasma discharge

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

Four point probe

In situ FPP

  • In situ four point probe:
    • A compact four point probe integrated with portable BN heater
  • Application
    • Monitoring of electrical properties evolution during annealing of thin films
    • Combination with other in situ characterization methods

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

Ellipsometer

In situ SE (M-2000V, M-2000FI, J.A. Woollam Inc)

  • In situ spectroscopic ellipsometers:
    • Rotating compensator configuration
    • Fast data acquisition: 1-5 sec/spectrum
    • Spectral range:
    • M-2000V (QTH lamp): 1.24 - 3.3 eV
    • M-2000FI (Xe lamp): 0.73 - 5.9 eV
  • Application
    • Real-time analysis of the growing film properties
    • Monitoring of the film evolution during thermal treatment
    • Ex situ characterization of large amounts of samples

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

Spectral photometer Shimadzu SolidSpec3700

Solid Spec 3700DUV (Shimadzu)

  • Spectral photometer:
    • Direct detection unit, spectral range: 190-3300 nm (N2 purging: 165-3300 nm)
    • Integrating sphere (Spectralon): 200-2600 nm
    • Detectors: photomultiplier (165-1000 nm), PbS (700-1800 nm), InGaAs (1600-3300 nm)
    • Sample size (max): 4 cm x 50 cm x 70 cm
  • Application
    • Precise measurements of transmittance and reflectance spectra
    • Reflectance from the strongly scattering surfaces

Responsible: M. Krause, matthias.krause(at)hzdr.de, 0351 / 260 - 3578

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3. Transport phenomena in nanostructures

Planned FWIO experimental setups

Picture Details

RAITH 150 

Electron beam writer RAITH 150-two (SEM/EBL)

  • 30 kV field emission cathode
  • Sample holder for wafers and small samples
  • Application: Electron beam lithography
    • up to 6 inch substrates
    • Smallest feature sizes 7 nm

Responsible: J. Grebing, j.grebing@hzdr.de, 0351 / 260 - 3148

RIBE IonSys 500

Reactive Ion Beam Etcher Roth & Rau IonSys 500 (RIBE)

  • Ar source
  • Etch gas: CF4
  • Application: Anisotropic Etching
    • Metals
    • Up to 4 inch wafers

Responsible: A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

Cryogenic Probe Station 

Cryogenic Probe Station

  • Lake Shore CPX-VF
    • Temperature range 4.5K – 400 K
    • Horizontal magnetic field up to 2T
  • Electrical characterization
    • 4-point geometry
    • semiconductor parameter analyzer

Responsible: A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

Cryogenic UHV break junction setup

Cryogenic UHV break junction setup

  • Low-temperature MCBJs
    • C60 evaporator
    • UHV
    • Temperature range 4K – 400 K
  • Electrical characterization
    • MCBJ
    • C60

Responsible: A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

 

Mechanically controllable break junctions (MCBJ)

  • Room temperature
  • Liquid environment
  • Application
    • Electrical characterization of molecular structures in liquid environment

Responsible: A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

BETty

BETty

  • UHV evaporation tool
    • Base pressure <10-9 mbar
    • E-gun evaporator (7 pockets)
    • Thermal evaporator (Al)
    • Temperature range 130 K – 600 K
    • Tilt range ±45°
    • Sputter gun (sample cleaning)
  • Application: Metal film deposition

Responsible: J. Grebing, j.grebing@hzdr.de, 0351 / 260 - 3148

Optical Tweezers

Optical Tweezers

  • tool for ...
    • ...
  • Application: ...

Responsible: ...

Planned FWIO experimental setups

 

Cluster deposition and characterization setup

  • Cluster source
    • Deposition of MoS clusters
    • Mass separation
    • Electrical characterization using MCBJ
  • Application
    • Electrical characterization of mass-selected MoS clusters using mechanically controllable break junctions (MCBJs)

Responsible: A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

ASOPS

Asynchronous Optical Sampling (ASOPS)

  • Application
    • Optical characterization of nanomechanical resonators

Responsible: A. Erbe, a.erbe@hzdr.de, 0351 / 260 - 2366

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Contact

PD Dr. habil. Artur Erbe
Abteilungsleiter
Scaling Phenomena
a.erbeAthzdr.de
Phone: +49 351 260 - 2366

Prof. Dr. Sibylle Gemming
Head of VI Memriox / Group leader Materials Simulation
Non-Equilibrium Thermodynamics
s.gemmingAthzdr.de
Phone: +49 351 260 - 2470
Fax: +49 351 260 - 12470