Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873

The Implantation chamber at the 40 kV ion implanter

Der 40 kV Ionenimplanter im Ionenstrahlzentrum Substrates: Wafers or smaller samples
Substrate size: 0.5x0.5 cm2 to 6" wafers
Implantation area: max. 150 x 150 mm
Implantation angle: 0° and 7°, other angles upon request
Substrate temperature: Nitrogen cooling for 2" wafers,
up to 800 °C for 1x1 cm2 samples
Fluence range: 1e12 to 1e17 cm-2 (higher fluences upon request)

Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873