Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873

The implantation chambers at the 200 kV ion implanter

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Chamber 1

Channel 1 at the 200 kV ion implanter Substrates: user defined, up to 10 kg
Substrate size: up to 370x370x600 mm3 (xyz)
Implantation area: max. 400x400 mm
Implantation angle: 0° bis 90°
Substrate temperature: no cooling, no active heating
Fluence range: ≥ 1e15 cm-2
  Rotation during implantation is possible

Chamber 2

Channel 2 at the 200 kV ion implanter Substrates: Wafers and smaller samples
Substrate size: 3" and 4" wafers and smaller samples
Implantation area: max. Ø 100 mm
Implantation angle: 0° and 7°, other angles upon request
Substrate temperature: up to 1100 °C
Fluence range: 1e13 to 1e17 cm-2 (higher fluences upon request)

Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873