Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873

The implantation chambers at the 500 kV ion implanter

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Chamber 1

Chamber 1 at the 500 kV implanter Substrates: Wafers or smaller samples
Substrate size: 2" to 6" wafers or smaller samples
Implantation area: max. 125x125 mm2
Implantation angle:
Substrate temperature: no cooling, no active heating
Fluence range: 5e10 to 5e16 cm-2

Chamber 2

Chamber 2 at the 500 kV implanter Substrates: up to Ø 50 mm
Substrate size: 2" Wafers or smaller samples
Implantation area: max. 50x50 mm2
Implantation angle:
Substrate temperature: up to 800 °C for 1x1 cm2,
up to 600 °C for up to 3" samples,
-80 °C for up to 3" samples
Fluence range: 5e10 to 5e16 cm-2

Chamber 3 with automated wafer handling

Chamber 3 at the 500 kV implanter Substrates: wafers
Substrate size: 4" wafers
Implantation area: Ø 98 mm
Implantation angle:
Substrate temperature: room temperature, water cooling
Fluence range: 5e12 to 5e15 cm-2

Chamber 4 - double implantation chamber (cf. 3 MV accelerator)

Chamber 4 at the 500 kV implanter Substrates: small samples
Substrate size: max. 20x20 mm2
Implantation area: max. 14x14 mm2
Implantation angle: 22.5°
Substrate temperature: up to 500 °C
Fluence range: 5e10 to 5e16 cm-2

Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873