Ion Technology - Implantation & Irradiation Conditions

Following table provides a quick overview about implantation/irradiation conditions, which can be realized using our machine park. In individual cases certain restrictions can apply when combining certain irradiation parameters. Please contact us for further information.

Ion species H - Bi (only stabile isotopes,
molecular ions & isotope spearation posssible)

no deuterium
Ion energy

100 eV - 55 MeV

Depth range

few Ångström up to ~150 µm (in Si)


107 - 1018 cm-2

Samples size

bis zu Ø 200 mm

Incidence angle

0° - 90°

Beam Current

nA - mA

Sample cooling

liquid nitrogen available

Sample heating

up to 1100 °C


< 2x10-6 mbar

Special chambers

for dual beam irradiation,
for continous sample rotation

Additional features

defined partial gas pressures,
motorized shutter for fluence gradients

 Air cleanliness

up to class 5 (DIN EN ISO 14644) 


Dr. Roman Böttger
Head Ion Implantation
Ion Technology
Phone: +49 351 260 - 2873