Ion Implanters

The ion beam center operates three ion implanters with maximal acceleration voltages of 500 kV, 200 kV and 40 kV. These facilitate ion beams with energies between 100 eV and 2 MeV. Significantly higher ion energies can be provided at our high-energy ion accelerators.

500 kV Ion Implanter

The 500 kV ion implanter at the IBC. Supplier: High Voltage Engineering Europa B.V., Model B8385
Ion source: IHC Bernas, gaseous and solid source feed
Energy range: 10 - 500 keV (for singly charged ions)
Scanning principle: Twofold electrostatic
Implantation chambers: 4

A detailed description of the implantation chambers at the 500 kV ion implanter can be found here.

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200 kV Ion Implanter

The 200 kv ion implanter at the IBC. Supplier: Danfysik A/S, Denmark, Model 1090
Ion source: Hot filament,
gaseous and solid source feed
Energy range: 20 - 200 keV (for singly charged ions)
Scanning principle: Twofold magnetic / electrostatic (chamber 1/2)
Implantation chambers: 2

A detailed description of the implantation chambers at the 200 kV ion implanter can be found here.

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40 kV Ion Implanter

The 40 kV ion implanter at the IBC. Supplier: Danfysik A/S, Denmark, Model 1050
Ion source: Chordis,
gaseous and solid source feed
Energy range: 100 eV - 40 keV (for singly charged ions)
Scanning principle: Twofold electrostatic
Implantation chambers: 1

A detailed description of the implantation chamber at the 40 kV ion implanter can be found here.


Contact

Dr. Roman Böttger
Head Ion Implantation
Ion Technology
r.boettger@hzdr.de
Phone: +49 351 260 - 2873