High Energy Ion Implantation
| Title | High Energy Ion Implantation |
|---|---|
| Description | The properties of the base material can be changed by high-energy implantation at the Ion Beam Center at HZDR. The process is used in semiconductor technology, among other applications. |
| Copyright | HZDR/Matthias Rietschel |
| Picture Id | 48618 |
| Date | 22.10.2014 |
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