Temperature Measurement in Ultra-Short Annealing Processes


Temperature Measurement in Ultra-Short Annealing Processes

Reichel, D.; Skorupa, W.; Schumann, T.

Industrial demands for short process times at low cost are steadily increasing. Considerable attention is thereby drawn to ultra-short annealing cycles on the order of just a few milliseconds. Flash Lamp Annealing allows for directed thermal treatment of surfaces within just a few milliseconds without or with drastically reduced thermal stress of the bulk material. Due to the selected wavelength range in the visible and near infrared region the lightpulse is absorbed by the near-surface layers and diffusion into the bulk is limited by the ultrashort time span. Thereby temperatures up to 2000°C are achieved dependent on the energy of the lightpulse and the optical properties of the sample. Cooling takes place by heat conduction into the bulk. To control the annealing process a precise temperature measurement is required that can filter the intense background radiation to obtain the true wafer temperature from its thermal radiation. A new method for temperature measurement will be presented which imposes a modulation on the lamp radiation to extract the true wafer signal.

Keywords: Flash Lamp Annealing; Ultra-Short Annealing; Temperature Measurement; Ripple Pyrometry

  • Lecture (Conference)
    Subsecond Thermal Processing of Advanced Materials, 25.-27.10.2011, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-16424
Publ.-Id: 16424