Fe doped InAs: what is the exchange interaction?


Fe doped InAs: what is the exchange interaction?

Yuan, Y.; Hübner, R.; Potzger, K.; Liu, F.; Sawicki, M.; Dietl, T.; Helm, M.; Zhou, S.

Fe doped InAs layers have been prepared by ion implantation and pulsed laser annealing. Fe ions exist in the +3 valence state when located in Indium sites, which indicates that Fe atoms do not introduce free carriers in the InAs layer and only act as the local spins. However, (In, Fe)As or (In, Fe)As codoped with Se (provide free electrons) exhibits typically superparamagnetic behavior, which is proven by both static and dynamic magnetic measurements. This is most probably due to the formation of Fe-rich nanoregions in the InAs matrix, similarly to the case of Cr-doped ZnTe [1]. However, the co-doping by Zn (which introduces free holes) increases both the saturation magnetization and the Curie temperature. A systematic comparison between (In, Fe)As, (In, Fe)As:Zn and (In, Fe)As:Se leads to the re-affirmation of the pd-exchange as the key gradient in dilute ferromagnetic semiconductors [2].

[1]. K. Kanazawa et al., Nanoscale, 6, 14667-14673 (2014)
[2]. T. Dietl et al., Science, 287, 1019-1022 (2000)

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