Subsecond thermal processing for the advancement of thin layers and functional coatings


Subsecond thermal processing for the advancement of thin layers and functional coatings

Skorupa, W.

This talk reviews the advances that subsecond thermal processing in the millisecond range using xenon-filled flash lamps (FLA) brings to the processing of the most advanced thin layer and coating materials, thus enabling the fabrication of novel electronic structures and materials. It will be demonstrated how such developments can translate into important practical applications leading to a wide range of technological benefits. An important issue of our work was the formation and characterization of semiconductor materials and coatings for the green energy advancement. Regarding photovoltaic applications, we dealt with the ion beam doping and thermal processing of PV silicon demonstrating using FLA a distinct improvement of the minority carrier diffusion length compared to rapid thermal processing and furnace treatments. Moreover, we engineered the hydrogen content in photovoltaic silicon in correlation to the phosphorus doping using plasma immersion ion implantation and FLA. Recently, we demonstrated also FLA driven boron and phosphorus in-diffusion from surface coatings. Further, we prepared coarse grained dendritic crystal structures in thin silicon films on silicon dioxide to show that the addition of carbon prevents the agglomeration of the molten silicon films and largely influences the crystallisation process. Finally the strongly developing field of large area electronics is represented by reporting on our activities in regard to transparent conductive oxide (TCO) and copper paste coatings.

Keywords: subsecond thermal processing; flash lamp annealing; ion implantation; photovoltaics; transparent conductive oxide; copper paste

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Publ.-Id: 23885