In situ RBS, Raman, and ellipsometry studies of layered material systems at elevated temperatures


In situ RBS, Raman, and ellipsometry studies of layered material systems at elevated temperatures

Wenisch, R.; Heras, I.; Lungwitz, F.; Janke, D.; Guillén, E.; Heller, R.; Gemming, S.; Escobar Galindo, R.; Krause, M.

The detailed knowledge of composition and structure is essential for the understanding of processes and properties of functional materials at elevated temperatures. To ensure materials functionality under in operando conditions, new concepts for analysis and process monitoring are necessary. In this contribution, selected layered material systems were studied in situ at temperatures up to 830°C by Rutherford backscattering (RBS), Raman spectroscopy, and ellipsometry within a cluster tool. Metal induced crystallization (MIC) is a promising technique for hydrogen-free synthesis of two-dimensional materials. Here, Si/Ag bilayers are studied as model system. The Si/Ag layer stacks are annealed at temperatures of 380 to 700°C. simultaneously, depth profiles of the elements are investigated by RBS revealing the diffusion kinetics. The changes in the phase structure and the degree of crystallinity are analyzed by Raman spectroscopy. Both the quick initial nucleation and ensuing growth processes are investigated. MIC is observed for all temperatures under study, while layer exchange occurs only for optimized process conditions.
As an example for high-temperature functional coatings, AlTiOxN1-x thin films were investigated in order to understand the influence of the oxygen to nitrogen ratio on the optical properties and their failure mechanisms at high temperatures. Ellipsometry and RBS results showed the influence of the initial oxygen content in the sample, inward diffusion of oxygen into the coating, and the high temperature stability of AlTiOxN1-x thin films. The low emittance of AlTiOxN1-x, allowed performing in situ RBS analysis at temperature up to 830°C for the first time.
Financial support by the EU, grant No. 645725, project FRIENDS2, and the
HGF via the W3 program (S.G.) is gratefully acknowledged.

Keywords: cluster tool; in situ analysis; RBS; Raman

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Publ.-Id: 24136