Electron-beam pulse annealed Ti-implanted GaP


Electron-beam pulse annealed Ti-implanted GaP

Werner, Z.; Barlak, M.; Ratajczak, R.; Konarski, P.; Markov, A. M.; Heller, R.

Gallium phosphide heavily doped with substitutional titanium is a prospective material for intermediate band solar cells. To manufacture such a material, single crystals of GaP were implanted with 120keV Ti ions to doses between 5 1014cm 2 and 5 1015cm 2. They were next pulse annealed with 2 ls electron-beam pulses of electron energy of about 13 keV and pulse energy density between 1 and 2 Jcm 2. The samples were studied by channeled Rutherford Backscattering, particle induced X-ray emission, and SIMS. The results show full recovery of crystal structure damaged by implantation and good retention of the implanted titanium without, however, its significant substitu- tion at crystal sites.

Keywords: GaP; implantation; electron beam; annealing; Ti

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Publ.-Id: 24268