The magnetic anisotropy of III-Mn-V ferromagnetic semiconductors prepared by ion implantation and pulsed laser melting


The magnetic anisotropy of III-Mn-V ferromagnetic semiconductors prepared by ion implantation and pulsed laser melting

Xu, C.; Yuan, Y.; Sawicki, M.; Helm, M.; Zhou, S.

As one of the most important physical properties of dilute ferromagnetic semiconductors (DFS), the magnetic anisotropy exhibits a complicated character and its origin is under continuous discussion [1, 2]. From the point of view of application, different magnetic anisotropies could meet various needs of spintronic devices. Due to different physical parameters (e.g. band gap, lattice constant) in various Mn doped III-V DMSs, various magnetic anisotropies are expected and could be tailored by Mn or hole concentrations [3-5]. To investigate this in greater detail, we prepare three typical III-Mn-V DFSs, InMnAs, GaMnAs, and GaMnP by ion implantation and pulsed laser annealing, which is a complementary approach to low-temperature molecular beam epitaxy. We report a systematic investigation on the magnetic anisotropy with the aim to understand its physical origin.

[1]. T. Dietl et al., Rev. Mod. Phys. 86, 187-251 (2014)
[2]. M. Birowska et al., Phys. Rev. Lett. 108, 237203 (2012)
[3]. U. Welp et al., Phys. Rev. Lett. 90, 167206 (2003)
[4]. M. Sawicki et al., Phys. Rev. B 70, 245325 (2004)
[5]. C. Bihler et al., Phys. Rev. B 78, 045203 (2008)

Keywords: Magnetic anisotropy; dilute ferromagnetic semiconductors (DFSs); ion implantation; pulsed laser annealing

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