In situ RBS, Raman, and ellipsometry studies of layered material systems at high temperatures in a ClusterTool


In situ RBS, Raman, and ellipsometry studies of layered material systems at high temperatures in a ClusterTool

Wenisch, R.; Janke, D.; Heras, I.; Lungwitz, F.; Guillén, E.; Heller, R.; Gemming, S.; Escobar Galindo, R.; Krause, M.

The detailed knowledge of composition and microstructure is essential for the understanding of processes and properties of new materials for applications at high temperatures. To ensure materials functionality under in operando conditions, new concepts for analysis and process monitoring are necessary. In this contribution, selected PVD deposited thin film material systems were studied in situ at temperatures up to 830°C by Rutherford backscattering spectrometry (RBS), Raman spectroscopy, and spectroscopic ellipsometry (SE) within a cluster tool.
Metal-induced crystallization with and without layer exchange (MIC w/o LE) is an emerging technique for processing of amorphous group IV elements below their isothermal crystallization temperatures. In this study, a bilayer system of 60 nm amorphous Si covered by 30 nm Ag (a-Si/Ag) was annealed at temperatures of 380 to 700°C by the combination of the above mentioned in situ techniques. The process comprised a relatively long-term incubation period followed by a fast MIC w/o LE step. More than 90% of the initial a-Si could be crystallized on top of the Ag-layer for optimized process conditions with temperatures of about 550°C. The as-formed Si consisted of up to 95% crystalline Si.
As an example for high-temperature solar selective coatings for thermo-solar applications, AlTiN and AlTiN1-xOx (x = 0 - 0.2) thin films were investigated in order to understand the influence of the oxygen/nitrogen ratio on the optical properties and failure mechanisms at high temperatures. The elemental depth profiles and the phase structure of both coatings do not change during annealing in high vacuum at temperatures up to of 750°C, as revealed by unchanged RBS and Raman spectra, respectively. SE and RBS results showed the influence of the initial oxygen content on high temperature stability of AlTiN and AlTiN1-xOx thin films. The low emittance of AlTiN1-xOx, allowed performing in situ RBS analysis at temperatures up to 830°C for the first time.

Keywords: cluster tool; in situ analysis; RBS; Raman; ellipsometry

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Publ.-Id: 25528