THz-spectroscopic studies on electron dynamics in a GaAs single quantum well and an InAs single quantum dot
THz-spectroscopic studies on electron dynamics in a GaAs single quantum well and an InAs single quantum dot
Schneider, H.; Schmidt, J.; Stephan, D.; Bhattacharyya, J.; Winnerl, S.; Dimakis, E.; Helm, M.
Intense, spectrally narrow terahertz fields from the free-electron laser (FEL) facility FELBE in Dresden, Germany, provide interesting opportunities for investigating the carrier dynamics in III-V semiconductor nanostructures. This talk will focus on recent FEL studies on dressing intersubband transitions in a wide GaAs single quantum well using terahertz time-domain spectroscopy, and on exciton dynamics in a single InAs/GaAs quantum dot using time-dependent photoluminescence.
Keywords: terahertz free-electron laser; intersubband; exciton; quantum well; quantum dot
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 26611) publication
-
Invited lecture (Conferences)
14-th International Conference on Intersubband Transitions in Quantum Wells (ITQW2017), 10.-15.09.2017, Singapore, Singapore
Permalink: https://www.hzdr.de/publications/Publ-26611
Publ.-Id: 26611