Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation


Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

Yuan, Y.; Amarouche, T.; Xu, C.; Rushforth, A.; Boettger, R.; Edmonds, K.; Campion, R.; Gallagher, B.; Helm, M.; von Bardeleben, H.; Zhou, S. Q.

In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [001] to in-plane [100] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.

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Publ.-Id: 27156