Effect of Ni-Ion Implantation into TiO2 Thin Films for Improving Resistive Switching Properties


Effect of Ni-Ion Implantation into TiO2 Thin Films for Improving Resistive Switching Properties

Das, D.; Barman, A.; Bhowmick, S.; Phase, D. M.; Rajput, P.; Jha, S. N.; Kanjilal, D.; Hübner, R.; Kanjilal, A.

The expedition for non-volatile memories (NVM) is still on, owing to the rapid convergence of current memory technologies to their physical limits [1]. In recent years, TiO2 thin film-based Resistive Random Access Memory (RRAM) devices have shown great promise to the future NVM technology due to their low cost, easy fabrication, scalability, and higher operation speed [1-2]. Switching from a low-resistance state (LRS) to the high-resistance state (HRS) is quite debatable [2]. However recent studies [3-4] suggest controlled defect (oxygen vacancy, OV) engineering by ion implantation may significantly improve the switching performance. In this respect, controlled incorporation of foreign elements in the host (TiO2 films) by ion beam implantation would be advantageous for OV formation.Results obtained for 35 keV Ni-doped TiO2 thin films will be presented here, emphasizing the enhancement of the LRS to HRS ratio for improving the resistive switching properties. The formation of graded Ni layer, regions will be addressed by detailed transmission electron microscopy studies. Whereas the extended X-ray absorption fine structure (EXAFS) measurements will show an increase in white light intensity at the Ni-K edge along with the change in pre-edge feature (compared to metallic Ni), indicating the interaction of Ni ions with the host matrix. Further, Ni-doping induced evolution of Ti3+ state will be demonstrated by X-ray photo electron spectroscopy, supporting the development of OV. Following the fabrication of Au/Ni-TiO2/Pt RRAM devices, charge transport mechanism will finally be explained on the basis of different conduction mechanisms.
[1] Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A., Stewart, D. R., & Williams, R. S. (2008) , Nature Nanotech. 3(7), 429.
[2] Lee, M. H., Kim, K. M., Kim, G. H., Seok, J. Y., Song, S. J., Yoon, J. H., & Hwang, C. S. (2010), Applied Physics Letters, 96(15), 152909.
[3] Pan, X., Shuai, Y., Wu, C., Luo, W., Sun, X., Zeng, H & Zhang, W. (2016), Applied Physics Letters, 108(3), 032904.
[4] Wylezich, H., Mähne, H., Heinrich, A., Slesazeck, S., Rensberg, J., Ronning & Mikolajick, T. (2015). Journal of Vacuum Science & Technology B, 33(1), 01A105.

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