Master theses / Diploma theses

Self-organized nanopattern formation on crystalline GaAs and InAs surfaces (Id 340)

Foto: AFM images of ion-induced surface patternings ©Copyright: Dr. Denise ErbVarious metals, semiconductors, and oxides form regular nanoscale surface patterns in a complex process of self-assembly under low energy ion irradiation. Studies of the elemental semiconductors Si and Ge have shown that the symmetry of their crystalline surface strongly influences the morphology of those nanopatterns. However, only one particular surface orientation has been studied analogously for the compound semiconductors GaAs and InAs. While for these materials, the nanopattern morphology is mainly attributed to their compound character, a significant additional influence of the surface crystal structure is expected. We want to demonstrate this by investigation the ion-induced pattern formation on crystalline GaAs and InAs with various surface orientations. The resulting surface patterns may find application in the bottom-up fabrication of complex nanostructured systems.
This work comprises the preparation of nanopatterned surfaces by low energy ion irradiation, imaging these surfaces by atomic force microscopy and scanning tunnelling microscopy, the quantitative analysis of these data, as well as simulations of the patterning process based on continuum equations or kinetic MonteCarlo models.
The project provides an introduction to research at a large scale facility (Ion Beam Center IBC) and opportunities for networking with HZDR specialists (f/m/d) on nanoscale surface modification and characterization.

Department: Ion Beam Center

Contact: Dr. Erb, Denise


-- completed B.Sc. studies or Vordiplom in experimental physics, materials science, or related subject
-- good command of German and/or English
-- ability to work independently and systematically


-- place of work: HZDR, location Rossendorf
-- project duration: 12 months, flexible starting time


Online application

Please apply online: english / german