Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

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42443 Publications

Crystal-GRID: Current status and prospects for experimental studies of atomic collisions in solids.

Jentschel, M.; Hauschild, T.; Börner, H. G.; Heinig, K.-H.

Abstract

The Doppler effect of electromagnetic radiation represents a very direct indicator to study the motion of emitting particles. In the Crystal-GRID technique one uses the ultra high resolution power of the crystal spectrometers GAMS4 and GAMS5 to measure the Doppler broadening of $\gamma$ radiation emitted from excited nuclei. Thus it represents a new nuclear probe for the direct study of atomic motion in solids at kinetic energies of several hundreds of eV.

A detailed description of the experimental technique will be given together with an overview on already performed experiments using massive single crystals
of TiO2, NaCl, Ni and Cr. In these experiments the comparison of experimental data to predictions deduced from Molecular Dynamics simulations has allowed to obtain new repulsive interatomic potentials.

The currently used double flat crystal geometry of the spectrometers has allowed to use only massive targets. Recent technical improvements of the GAMS5 spectrometer towards a double bent crystal geometry
will allow to extend the technique to studies of crystalline layers as they may result from ion implantation. The current status of the spectrometer and the expected capabilities will be presented.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; TiO2; NaCl; Ni; Cr

  • Poster
    ICACS-18, Odense, Denmark, August 3-8, 1999

Permalink: https://www.hzdr.de/publications/Publ-2281

Study of Interatomic Potentials in ZnS using Crystal-GRID high-precision gamma spectroscopy and MD simulations

Hauschild, T.; Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Möller, W.

Abstract

Crystal-GRID measurements have been performed with ZnS single crystals. A new Crystal-GRID potential could be determined by splining a Stillinger-Weber like equilibrium potential to screened Coulomb potentials. The new potential is fitted to experimental data containing information about the energy range of about 10 to 500 eV and differs significantly from the screened Coulomb potentials. The nuclear level life time of the 3221 keV level in 33S has been determined to be (48.8 +/- 0.7) fs. Furthermore the predicted asymmetry of a Crystal-GRID line shape could be observed for the first time.

Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS

  • Lecture (Conference)
    ICACS-18, Odense, Denmark, August 3-8, 1999

Permalink: https://www.hzdr.de/publications/Publ-2280

Ion beam processing for silicon-based light emission

Skorupa, W.

  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2279

Beta-SiC on SiO2 formed by ion implantation and bonding for micromechanical applications

Serre, C.; Romano-Rodriguez, A.; Perez-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Kögler, R.; Skorupa, W.

  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2278

Bonding and etch-back of ion beam synthesized beta-SiC for SiCOI formation

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Esteve, J.; Kögler, R.; Skorupa, W.

  • Lecture (Conference)
    NATO Advanced Workshop "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", Kiev, Ukraine, Oct. 1998

Permalink: https://www.hzdr.de/publications/Publ-2277

Characterisation of Al-implanted LiF by a monoenergetic positron beam

Sendezera, E. J.; Davidson, A. T.; Fischer, C. G.; Connell, S. H.; Sellschop, J. P. F.; Anwand, W.; Brauer, G.; Nicht, E.-M.

  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998

Permalink: https://www.hzdr.de/publications/Publ-2276

Non-destructive analysis of elements with low atomic numbers (Na – K) in artifacts using X-ray fluorescence analysis

Schreiner, M.; Mantler, M.; Neelmeijer, C.; Mäder, M.

  • Lecture (Conference)
    31th Int. Symp. on Archaeometry, Budapest, Hungary, April 27 - May 1, 1998

Permalink: https://www.hzdr.de/publications/Publ-2275

Temperaturverhalten von durch Hochdosisimplantation hergestellten Al-Fe-Legierungen

Reuther, H.

  • Lecture (Conference)
    IX. Mößbauerkolloquium, Freiberg, Sept. 28-30, 1998

Permalink: https://www.hzdr.de/publications/Publ-2274

Charakterisierung von durch Ionenimplantation hergestellten Fe-Al-Schichten mittels Augerelektronen- und Mößbauerspektroskopie

Reuther, H.

  • Lecture (Conference)
    10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998

Permalink: https://www.hzdr.de/publications/Publ-2273

Strong blue electroluminescence from Ge-rich silicondioxide-on-silicon formed by ion beam synthesis

Rebohle, L.; von Borany, J.; Tyschenko, I. E.; Skorupa, W.

  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2272

Is there still any hope for blue luminescence from silicon?

Rebohle, L.; von Borany, J.; Markwitz, A.; Skorupa, W.

  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2271

The Installations for Materials Research on ROBL at the ESRF

Prokert, F.; Betzl, M.; Eichhorn, F.; Matz, W.; Schell, N.

  • Lecture (Conference)
    Jahrestagung DGK, Karlsruhe, März 1998

Permalink: https://www.hzdr.de/publications/Publ-2270

Microscopic processes of damage production during ion implantation studied by combining time-ordered BCA with MD simulations

Posselt, M.

  • Lecture (Conference)
    MRS Spring Meeting, San Francisco, CA, USA, April 13-17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2269

Pulsed plasma beam mixing of Ti and Mo on Al2O3 substrates

Piekoszewski, J.; Wieser, E.; Grötzschel, R.; Reuther, H.; Werner, Z.; Langner, A.

  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2268

Formation of surface Pd-Ti alloys using pulsed plasma beams

Piekoszewski, J.; Werner, Z.; Wieser, E.; Langner, J.; Grötzschel, R.; Reuther, H.; Jagielski, J.

  • Lecture (Conference)
    ION'98, Kazimierz Dolny, Poland, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2267

Structural and compositional characterisation of N+ and Al+ co-implanted 6H-SiC using optical methods

Pezoldt, J.; Yankov, R. A.; Fukarek, W.; Mücklich, A.; Fontaine, F.; Skorupa, W.; Werninghaus, T.; Zahn, D.

  • Lecture (Conference)
    9th Europ. Conf. on Diamond, Diamond-like Materials, Nitrides, and Silicon Carbide, Crete, Greece, Sept. 13-18, 1998

Permalink: https://www.hzdr.de/publications/Publ-2266

A novel (SiC)1-x(AIN)x compound synthesized using ion beams

Pezoldt, J.; Yankov, R. A.; Mücklich, A.; Fukarek, W.; Reuther, H.; Skorupa, W.

  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2265

Nitriding of stainless steel by low energy ion implantation - the nitriding kinetics

Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.

Abstract

Stainless steels are known for their excellent corrosion resistance based on a native surface oxide layer and a moderate hardness leading to short life times in applications with intensive wear. Hence, surface hardening could greatly enlarge their range of applications. However, stainless steels are considered as difficult candidates for surface hardening. Nitriding by low-energy ion implantation is a promising technique. At target temperatures of about 400°C the formation of a highly nitrogen enriched layer has been observed. This layer exhibits an increased surface hardness and a reduced wear without adversely affecting the excellent corrosion resistance.
This work focuses on the nitriding kinetics which are not well understood. Experimental data has been obtained by time and depth resolved elemental analyses using elastic recoil detection (ERD) during the nitriding process. The ERD technique has been optimised for time resolved in-situ data acquisition. Fast nitrogen diffusion, an energy and current density dependence of the thickness of the nitrogen enriched layer and an influence of the surface oxide layer have been observed. The physical origin of these phenomena will be revealed and a simple model of the nitriding process taking into account the governing physical processes, i. e. sputtering, recovering of the surface from the residual gas and diffusion in the solid, will be presented.

  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2264

Nitrogen transport during plasma ion nitriding of austenitic stainless steel - the role of the native surface oxide layer

Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.

Abstract

Austenitic stainless steels are widely used due to their advantageous combination of properties as ductility, strength and excellent corrosion resistance. However, due to their moderate hardness they are not suited for abrasively stressed parts. Hence, the market potential of austenitic stainless steels could be greatly enhanced by a process that allows surface hardening without negatively affecting the other properties. Standard techniques as heat treatment, carburizing and conventional nitriding fail. Recently it has been shown that ion nitriding at moderate temperature is a promising candidate for surface hardening austenitic stainless steels. Surface hardness increased by factors of 4 to 5 leading to wear resistance increases by more than two orders of magnitude have been achieved without compromising the excellent corrosion resistance. It has been reported that the nitriding velocity depends on the ion energy and on the current density and that the passivating surface oxide layer of the austenitic stainless steels may play an important role. In a systematic study the influence of the surface oxide layer on the nitriding efficiency of ion nitriding austenitic stainless steel at moderate temperatures is analyzed by determining the retained nitrogen dose for fixed process times and temperatures but different oxygen partial pressures, ion current densities and ion energies. Additionally, for some selected process parameters during processing, the composition of the near surface region (down to 150nm) regarding the nitrogen, the carbon and the oxygen content is obtained by an in situ experiment.

  • Lecture (Conference)
    Int. Conf. on Metallurgical Coatings and Thin Films, San Diego, April 27 - May 1, 1998

Permalink: https://www.hzdr.de/publications/Publ-2263

Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC

Panknin, D.; Wirth, H.; Mücklich, A.; Skorupa, W.

  • Lecture (Conference)
    ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2262

Positron affinities and deformation potentials in cubic semiconductors

Panda, B. K.; Brauer, G.

  • Lecture (Conference)
    30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998
  • Acta Physica Polonica, No. 4, Vol. 95 (1999), 641-646

Permalink: https://www.hzdr.de/publications/Publ-2261

Hydrogen incorporation into Cu-III-VI2 chalcopyrite semiconductors

Otte, K.; Schlemm, H.; Schindler, A.; Bigl, F.; Lippold, G.; Grambole, D.; Herrmann, F.

  • Lecture (Conference)
    MRS Spring Meeting, San Francisco, USA, April 13 -17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2260

Johann Gregorius Höroldt fecit?

Neelmeijer, C.; Mäder, M.; Pietsch, U.; Ulbricht, H.; Walcha, H.-M.

Abstract

"J. G. Höroldt fec. et inv": Gemacht und erdacht von Johann Gregorius Höroldt - findet man als Signatur auf dem Boden der prachtvoll dekorierten "Höroldt-Vase" in der Porzellansammlung im Zwinger. Das typische Höroldt-Motiv findet sich wieder auf einem Walzenkrug, ebenfalls aus weißem Porzellan als Träger. Mittels Ionenstrahlanalyse an Luft gelang es am 5 MV Tandembeschleuniger des FZ Rossendorf, zerstörungsfrei aufzuklären, dass die Pigmente der Schmelzfarben auf der Vase der überlieferten "Höroldt'schen Palette" entsprechen. Im Gegensatz dazu wurde z. B. Chrom-Grün am Walzenkrug gefunden, was eindeutig auf eine Kopie hinweist.

Keywords: Ionenstrahlanalyse an Luft; zerstörungsfrei; PIXE; Malfarben; Porzellan

  • Lecture (Conference)
    Jahrestagung der GDCh, Archäometrie und Denkmalpflege, Würzburg, Sept. 23 - 25, 1998
  • Lecture (Conference)
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 78 - 80
  • Contribution to external collection
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 78 - 80

Permalink: https://www.hzdr.de/publications/Publ-2259

Paramagnetische Störstellen in Si nach Implantation von Pd

Näser, A.; Gelhoff, W.; Yankov, R. A.

  • Lecture (Conference)
    DPG-Tagung, Regensburg, Germany, March 23, 1998

Permalink: https://www.hzdr.de/publications/Publ-2258

EPR identification of a shallow donor state of cadmium in silicon

Näser, A.; Gehlhoff, W.; Overhof, H.; Yankov, R. A.

  • Lecture (Conference)
    8th Int. Conf. on Shallow Level Centres in Semiconductors, Montpellier, France, July 27-30, 1998

Permalink: https://www.hzdr.de/publications/Publ-2257

Wear properties of TiN coated cutting tools implanted with nitrogen ions

Narojczyk, J.; Piekoszewski, J.; Richter, E.; Werner, Z.

  • Lecture (Conference)
    ION´98, Kazimierz Dolny, Poland, June 16-19, 1998
  • Nukleonika Vol. 44, No. 21, p. 225-230, 1999

Permalink: https://www.hzdr.de/publications/Publ-2256

Beam line implantation of boron into hard metals

Mrotschek, I.; Günzel, R.; Matz, W.; Möller, W.; Anishchik, V.

  • Lecture (Conference)
    ION´98, Kazimierz Dolny, Poland, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2255

Plasma-Immersions-Ionenimplantation

Möller, W.

  • Invited lecture (Conferences)
    Sommerschule "Nukleare Sonden und Ionenstrahlen", Bad Blankenburg, Sept., 1998 (invited lecture)
  • Lecture (Conference)
    VDE/ITG-Seminar "Teilchenstrahl- und Plasmatechnik", Helmsdorf b. Dresden, March 7, 1997

Permalink: https://www.hzdr.de/publications/Publ-2254

Schichtanalyse mit Ionenstrahlen

Möller, W.

  • Invited lecture (Conferences)
    W. E.-Heraeus-Ferienkurs, Chemnitz, Sept. 7, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2253

Plasma immersion ion implantation for diffusive treatment

Möller, W.

  • Invited lecture (Conferences)
    PSE'98, Garmisch-Partenkirchen, Sept. 14 - 18, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2252

Vorsorgeuntersuchung an historischem Glas

Mäder, M.; Neelmeijer, C.; Schreiner, M.

  • Lecture (Conference)
    Jahrestagung der GDCh, Archäometrie und Denkmalpflege, Würzburg, Sept. 23 -25, 1998
  • Lecture (Conference)
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 149 - 151
  • Contribution to external collection
    Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 149 - 151

Permalink: https://www.hzdr.de/publications/Publ-2251

Composition analysis of medieval glass using PIXE

Mäder, M.; Neelmeijer, C.; Schreiner, M.

  • Lecture (Conference)
    8th. Int. Conf. on PIXE and its Analytical applications, Lund, Sweden, June 14-18, 1998

Permalink: https://www.hzdr.de/publications/Publ-2250

Modeling high temperature co-implantation of N+-and Al+-ions into SiC: the effects of stress on the implant and damage distributions

Kulikov, A. V.; Trushin, Y. V.; Yankov, R. A.; Kreißig, U.; Fukarek, W.; Mücklich, A.; Skorupa, W.; Pezoldt, J.

  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2249

Theoretical and experimental studies of (AIN)(1-x)(SiC)xlayer structures formed by N+ and Al+ co-implantation 6H-SiC

Kulikov, A. V.; Pezoldt, J.; Rybin, P. V.; Skorupa, W.; Trushin, Y. V.; Yankov, R. A.

  • Lecture (Conference)
    Int.Workshop Nondestructive Testing and Computer Simulations in Science and Engineering, E 2, St. Petersburg, Russia, June 8 - 12, 1998

Permalink: https://www.hzdr.de/publications/Publ-2248

Dynamic in-situ diagnostics using ERD analysis

Kruse, O.; Grötzschel, R.

  • Lecture (Conference)
    ION'98, Kazimierz Dolny, Poland, June 16 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2247

Tiefenselektive Phasenanalyse der Fe-Silizidbildung in Fe-ionenimplantiertem Si mittels DCEMS

Kruijer, S.; Walterfang, M.; Keune, W.; Dobler, M.; Reuther, H.

  • Lecture (Conference)
    DPG-Frühjahrstagung, Regensburg, March 23-27, 1998

Permalink: https://www.hzdr.de/publications/Publ-2246

Deposition of nanoscaled multilayer structures by ion beam assisted deposition

Kolitsch, A.; Wang, X.; Möller, W.

  • Lecture (Conference)
    5th DANFYSIK User Meeting, Brindisi, Italien, Sept. 1998

Permalink: https://www.hzdr.de/publications/Publ-2245

Development of a user data base system for ion implanter operation

Kolitsch, A.; Schöneich, J.

  • Lecture (Conference)
    5th DANFYSIK User Meeting, Brindisi, Italy, Sept. 1998

Permalink: https://www.hzdr.de/publications/Publ-2244

BN based multilayers by ion beam assisted deposition

Kolitsch, A.; Wang, X.; Möller, W.

  • Lecture (Conference)
    MRS Fall Meeting 1998, , Boston, USA, Dec. 1998

Permalink: https://www.hzdr.de/publications/Publ-2243

Defect agglomeration in ion implanted silicon away from RP

Kögler, R.; Yankov, R. A.; Skorupa, W.

  • Lecture (Conference)
    XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998

Permalink: https://www.hzdr.de/publications/Publ-2242

Technische Sitzungen der Sektion 2 (Thermo- und Fluiddynamik) der Jahrestagung Kerntechnik 1999

Knebel, J.; Grötzbach, G.; Lischke, W.; Rohde, U.; Schaffrath, A.

Abstract

Auf der Jahrestagung Kerntechnik 1999 in Karlsruhe wurden in der Sektion 2 vier technische Sitzungen zu den Themenschwerpunkten: Stabilitätsuntersuchungen in Zweiphasenströmungen, DWR Integralexperimente, Experimente und Code-Validierung für WWER-Reaktoren, 3D Phänomene, Methoden und Rechnungen sowie 1 Postersession durchgeführt. Die einzelnen Beiträge werden in dem vorliegenden Artikel zusammengefaßt.

Keywords: Jahrestagung Kerntechnik; Thermo- und Fluiddynamik; Stabilitätsuntersuchungen; WWER-Reaktoren; 3D Phänomene

  • atomwirtschaft - atomtechnik 44 (1999), Heft 7, S. 419-423

Permalink: https://www.hzdr.de/publications/Publ-2241

Defects remaining in MeV-ion-implanted Si away from the peak of the nuclear energy deposition

Kögler, R.; Yankov, R. A.; Posselt, M.; Danilin, A.; Skorupa, W.

  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2240

Distribution of gettering centres at a buried amorphous layer in Si

Kögler, R.; Eichhorn, F.; Mücklich, A.; Skorupa, W.; Danilin, A.

  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2239

Nanopatterning of thin CoSi2 layers by local oxidation

Kappius, L.; Antons, A.; Dolle, M.; Trinkaus, H.; Mesters, S.; Bochem, H.-P.; Mantl, S.; Heinig, K.-H.

  • Lecture (Conference)
    Spring Meeting, San Francisco, CA, USA, April 13-17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2238

Hydrogen isotope inventories in plasma facing components of ASDEX UPGRADE

Krieger, K.; Maier, H. J.; Grambole, D.; Schleussner, D.; Franzen, P.

  • Lecture (Conference)
    17th IAEA Fusion Energy Conference, Yokohama, Japan, Oct. 19 -24, 1998

Permalink: https://www.hzdr.de/publications/Publ-2236

Lattice site location of foreign atoms measured by the GRID method

Karmann, A.; Wesch, W.; Börner, H. G.; Jentschel, M.; Heinig, K.-H.

  • Lecture (Conference)
    Int. Workshop on Applications of High-Precision gamma-Spectroscopy, University of Notre Dame, Notre Dame, IL, USA, July 1 - 3, 1998

Permalink: https://www.hzdr.de/publications/Publ-2234

The GRID technique: current status and new trends

Jentschel, M.; Börner, H. G.; Heinig, K.-H.; Doll, C.

  • Lecture (Conference)
    Int. Workshop on Applications of High-Precision (-Spectroscopy, University of Notre Dame, Notre Dame, IL, USA, July 1 - 3, 1998

Permalink: https://www.hzdr.de/publications/Publ-2233

Structural analysis of Si/Fe and Mo/Fe ion-beam mixed layers

Jagielski, J.; Kopcewicz, M.; Turos, A.; Eichhorn, F.

  • Lecture (Conference)
    11th. Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2232

Growth of ion-beam deposited a-C and a-C:H films: molecular-dynamics simulations using empirical many-body potential expressions

Jäger, H.-U.

  • Lecture (Conference)
    9th Europ. Conf. on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide, Crete, Greece, Sept. 13-18, 1998

Permalink: https://www.hzdr.de/publications/Publ-2231

Untersuchung historischer menschlicher Knochen mit Ionen-Mikrosonde

Jankuhn, S.; Butz, T.; Flagmeyer, R.-H.; Reinert, T.; Vogt, J.; Barckhausen, B.; Hammerl, J.; Protsch Von Zieten, R.; Grambole, D.; Herrmann, F.; Bethge, K.

  • Lecture (Conference)
    Frühjahrstagung der Fachverbände Chemische Physik, Kurzzeitphysik, Plasmaphysik, Polymerphysik, Bayreuth, March 9 - 13, 1998

Permalink: https://www.hzdr.de/publications/Publ-2230

Heavy-Ion induced damage of crystalline Ge and W at 0.5 to 8 MeV/u range

Huber, H.; Assmann, W.; Karamian, S. A.; Mieskes, H. D.; Nolte, H.; Gazis, E.; Kokkoris, M.; Kossionides, S.; Vlastou, R.; Grötzschel, R.; Mücklich, A.; Prusseit, W.

  • Lecture (Conference)
    Int. Conf. on Swift Heavy Ions in Matter ( SHIM-98), Berlin , May 1998
  • Nuclear Instruments and Methods in Physics Research B 146 (1998) 309-316

Permalink: https://www.hzdr.de/publications/Publ-2229

Pd diffusion in ZnTe and CdTe

Herrmann, S.; Mahnke, H.-E.; Spellmeyer, B.; Wienecke, M.; Reinhold, B.; Yankov, R. A.; Gumlich, H.-E.

  • Lecture (Conference)
    E-MRS´98, Strasbourg, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2228

Effects of neutron irradiation on Fe-Cu model alloys and RPV steels probed by positron annihilation and hardness measurements

Hempel, A.; Saneyasu, M.; Tang, Z.; Hasegawa, M.; Brauer, G.; Plazaola, F.; Yamaguchi, S.

  • Lecture (Conference)
    19th Symp. on Effects of Radiation on Materials, Seattle/WA, June 16-18, 1998

Permalink: https://www.hzdr.de/publications/Publ-2227

A combination of computer simulation methods to predict quantum dot evolution during ion beam synthesis

Heinig, K.-H.; Strobel, M.

  • Lecture (Conference)
    4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan, Sept.15 - 19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2226

Application of high-resolution gamma-spectroscopy (GRID method) in solid state physics

Heinig, K.-H.; Börner, H. G.; Jentschel, M.

  • Invited lecture (Conferences)
    Int. Workshop on Applications of High-Precision (-Spectroscopy, University of Notre Dame, Notre Dame, IL, July 1 - 3, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2225

Nanocrystal formation in SiO2: experiments, modelling and computer simulations

Heinig, K.-H.; Schmidt, B.; Markwitz, A.; Grötzschel, R.; Strobel, M.; von Borany, J.

  • Invited lecture (Conferences)
    E-MRS'98, Strasbourg, France, June 16-19, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2224

What is the physics behind the 3He-4He anomaly?

Neubert, W.; Botvina, A. S.

Abstract

We show that coalescence of nucleons emitted prior to thermalization in highly excited nuclei can explain the anomaly of kinetic energies of helium fragments. This mechanism accomplishes the statistical approach to nuclear rections formerly used to describe intermediate mass fragment production.

Keywords: Intermediate energy hadron -nucleus and nucleus-nucleus interactions; helium isotopes

  • European Physical Journal A, Vol. 7, No. 1, pp.101-106

Permalink: https://www.hzdr.de/publications/Publ-2223

Phasenbildung und Standzeiterhöhung von HSS-Bohrern nach Plasma-Immersions-Implantation

Günzel, R.; Mändl, S.; Möller, W.; Hilke, R.; Knösel, E.; Künanz, K.

  • Lecture (Conference)
    Werkstoffwoche München, Oct. 12-15, 1998

Permalink: https://www.hzdr.de/publications/Publ-2222

Plasma-Immersions-Implantation – ein modernes Verfahren zur Modifizierung von Werkstückoberflächen

Günzel, R.; Brückner, J.; Richter, E.; Möller, W.

  • Lecture (Conference)
    Werkstoffwoche München, Oct. 12-15, 1998

Permalink: https://www.hzdr.de/publications/Publ-2221

Proton conducting Ba3Ca1.18Nb1.82O8.73/H2O: Pressure/compositions isotherms in terms of Fermi-Dirac-Statistics

Groß, B.; Marion, S.; Lind, K.; Hempelmann, R.; Grambole, D.; Herrmann, F.

  • Lecture (Conference)
    9th Int. Conf. on Solid State Protonic Conductors (SSSPC-9), Bled, Slovenia, Aug. 17 - 21, 1998

Permalink: https://www.hzdr.de/publications/Publ-2220

Fragmentation of Be induced by 1 GeV protons

Andronenko, L. N.; Andronenko, M. N.; Gusev, Y. I.; Kotov, A. A.; Neubert, W.; Petrov, G. E.; Seliverstov, D. M.; Strakovski, I. I.; Vaishnene, L. A.; Yatsoura, V. I.; Zalite, A. Y.

Abstract

Fragment yields and energy spectra of He, Li and Be isotopes have been measured in p+9Be interactions at 1 GeV incident energy at 30 deg. and 126 deg. using a two-arm
spectrometer based on Bragg chambers. The obtained yield ratio of the low abundant
8He to 8Li in the spectator momentum range is compared with published data.

Keywords: fragmentation; cross section; isotope; proton

  • Other report
    Preprint NP-36-1999 Nr. 2321 , St.Petersburg Nuclear Physics Institute ,Gatchina, Russia

Permalink: https://www.hzdr.de/publications/Publ-2219

ERDA in-situ studies of atomic transport processes in various materials

Grötzschel, R.; Kreißig, U.; Kruse, O.; Grigull, S.; Parascandola, S.; Schmidt, B.

  • Invited lecture (Conferences)
    Int.Conf. on Swift Heavy Ions in Materials Engeneering and Characterization (SHIMEC-98), New Delhi, Oct. 19 - 22, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2218

Hydrogen and deuterium depth profiling in divertor tiles of a fusion experiment by micro-ERDA

Grambole, D.; Herrmann, F.; Behrisch, R.; Hauffe, W.

Abstract

Depth profiling of light elements in the surface layer of solids by means of ERDA is limited to depths smaller than about 1 mu m. In order to measure the distributions
of hydrogen isotopes in larger depth regions such as needed for the divertor tiles from the tokamak fusion experiment ASDEX-Upgrade in the Max-Planck-Institut
fur Plasmaphysik, samples cut from the divertor tiles (about 0.6 mm tungsten on carbon) were bevelled at different angles by mechanical cutting and polishing or by
ion beam slope cutting. The mechanically cut slopes were additionally cleaned and polished by oblique incidence ion beam sputtering with target rotation to avoid
anisotropic etching.
The surface composition along the slope was measured by ERDA with the Rossendorf Nuclear Microprobe, A 10 MeV Si ion beam was focused to about 3 mu m
and scanned linearly across the slope. The hydrogen and deuterium recoils were detected by a surface barrier detector at a recoil angle of 30 degrees after passing
through a 10 mu m thick Al foil for stopping scattered primary ions. Deuterium was found at depths up to about 25 mu m and hydrogen up to 750 mu m on the
samples analysed.

Keywords: micro-ERDA; elastic recoil detection; depth profiling; hydrogen; deuterium

  • Lecture (Conference)
    6th Int. Conf. on Nucl. Microprobe Technology and Applications, Stellenbosch, South Africa, Oct. 11 - 16, 1998
  • Nuclear Instruments and Methods in Physics Research B 158(1999) 647-652

Permalink: https://www.hzdr.de/publications/Publ-2217

Fragment production in proton interactions with light nuclei

Andronenko, L. N.; Andronenko, M. N.; Seliverstov, D. M.; Neubert, W.

Abstract

Isotopic yield ratios were derived from double-differential cross sections measured in p+9Be and p+12C collisions at 1 GeV. Enhanced 9He yields were found compared to heavier target nuclei.

  • Contribution to proceedings
    7th International Conference on Clustering Aspects of Nuclear Structure and Dynamics. Rab, Croatia 1999

Permalink: https://www.hzdr.de/publications/Publ-2216

Ions and electron-irradiation induced deep levels in n-type and p-type 6H-SiC

Gong, M.; Beling, C. D.; Fung, S.; Brauer, G.; Wirth, H. D.; Skorupa, W.; You, Z.-P.

  • Lecture (Conference)
    MRS 1998 Spring Meeting, San Francisco, April 13-17, 1998

Permalink: https://www.hzdr.de/publications/Publ-2215

Si1-xGex structures fabricated by focused ion beam implantation

Ganetsos, T.; Tsamakis, D.; Panknin, D.; Mair, G. L. R.; Teichert, J.; Bischoff, L.; Aidinis, C.

  • Lecture (Conference)
    Conference in Low Temperature Devices, Toscane, Italy, June 1998
  • Contribution to external collection
    J. de Phys. IV 8 (1998) Pr3 - 109

Permalink: https://www.hzdr.de/publications/Publ-2214

Analysis of mechanisms in ECR-PECVD of BN films using in situ ellipsometry

Fukarek, W.; Möller, W.

  • Lecture (Conference)
    DACH - Kolloquium, Giengen, Oct. 6-8, 1998

Permalink: https://www.hzdr.de/publications/Publ-2213

Investigation of in-plane anisotropy of IBAD t-BN films

Fukarek, W.; Möller, W.

  • Lecture (Conference)
    DACH - Kolloquium, Giengen, Oct. 6-8, 1998

Permalink: https://www.hzdr.de/publications/Publ-2212

In plane anisotropy of IBAD t-BN films

Fukarek, W.; Möller, W.

  • Lecture (Conference)
    Gordon Research Conference on Plasma Processing Science, Tilton School, New Hampshire, USA, Aug. 9 - 14, 1998

Permalink: https://www.hzdr.de/publications/Publ-2211

Applications of infrared spectroscopy in materials research

Fukarek, W.

  • Invited lecture (Conferences)
    33. Holzhau-Meeting, March 30, April 3, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2210

A slow positron beam investigation of positron-defect interactions in single crystalline synthetic type IB diamonds and a natural type IIB diamond

Fischer, C. G.; Connell, S. H.; Coleman, P. G.; Anwand, W.; Malik, F.; Brauer, G.; Britton, D. T.; Sellschop, J. P. F.

  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surface (SLOPOS - 8), Cape Town, Sept. 6 - 12, 1998

Permalink: https://www.hzdr.de/publications/Publ-2209

Temperature effect on the morphology of helium bubble clusters in silicon

Fichtner, P.; Kaschny, J. R.; Yankov, R. A.; Mücklich, A.; Skorupa, W.

  • Lecture (Conference)
    14th Int. Conf. On Electron Microscopy, Cancum, Mexico, Aug. 31-Sept.5, 1998

Permalink: https://www.hzdr.de/publications/Publ-2208

The effects of annealing temperature on the formation of helium filled structures in silicon

Fichtner, P.; Kaschny, J. R.; Behar, M.; Yankov, R. A.; Mücklich, A.; Skorupa, W.

  • Lecture (Conference)
    11th Int. Conf. on Ion Beam Modification of Materials (IBMM'98), Amsterdam, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2207

X-ray studies of silicon wafers implanted with MeV Ge++ions

Eichhorn, F.; Sass, J.; Mazur, K.

  • Lecture (Conference)
    4th Europ. Conf. on High Resolution X-ray Diffraction and Topography, Durham/GB, Sept. 9 - 12, 1998

Permalink: https://www.hzdr.de/publications/Publ-2206

CEMS-Eisendisilizide-Ionenstrahlverfahren

Dobler, M.

  • Lecture (Conference)
    IX. Mößbauerkolloquium Freiberg, Sept. 28-30, 1998

Permalink: https://www.hzdr.de/publications/Publ-2205

Untersuchung der Eisendisilizidbildung nach der Implantation von Fe in Si

Dobler, M.; Reuther, H.

  • Lecture (Conference)
    10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998

Permalink: https://www.hzdr.de/publications/Publ-2204

Ion bombardment stimulated phase formation in quartz glasses

Deshkovskaya, A. A.; Richter, E.

  • Lecture (Conference)
    11.th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, Netherlands, Aug. 31 - Sept. 4, 1998

Permalink: https://www.hzdr.de/publications/Publ-2203

FTIR-Untersuchungen zur Komplexierung von Uran(VI) durch Huminsäuren

Heise, K.-H.; Nicolai, R.; Pompe, S.; Bubner, M.; Klöcking, R.; Bernhard, G.

Abstract

Aufgrund der nur unvollkommen erfaßbaren, keineswegs stabilen chemischen Struktur und Funktionalität von Huminsäuren aus natürlichen Recourcen haben operationell mit HS übereinstimmende, synthetische Polymere als Modellhuminsäuren in vielen Bereichen der experimentellen Wissenschaften Eingang gefunden. Sie sind vor dem Hintergrund der Umweltkontaminationen durch toxische und radiotoxische Schwermetalle besonders für Bindungsstudien mit Metallionen interessant, da ihre Funktionalität durch Variation der Precursoren und der Synthesebedingungen in weiten Grenzen "eingestellt" werden kann.

Wir haben FTIR-spektrometrisch die festen Komplexe von Uran(VI) mit unterschiedlichen, gut charaktersierten Huminsäuren, zwei natürlichen Huminsäuren (Aldrich-Huminsäure und eine aus Moorwasser des "Kleinen Kranichsees" isolierte Huminsäure) sowie drei synthetischen Huminsäuren (zwei Melanoidinfraktionen sowie das Oxidationsprodukt von 3,4,5 Trihydroxybenzoesäure), verglichen. Trotz unterschiedlicher Herkunft der Huminsäuren, die in ihren FTIR-Spektren deutlich wird, scheint die Urananbindung an die Huminsäuren sehr ähnlich zu sein, was durch EXAFS-Untersuchungen an Uranylkomplexen natürlicher Huminsäuren und synthetischer Huminsäuren vom Melanoidintyp gestützt wird. Sowohl die asymmetrischen UO22+-Streckschwingungen im mittleren Infrarot, die wir zwischen 933.5 cm-1 und 923.1 cm-1 registrieren, als auch die UO22+-Deformationsschwingungen im fernen Infrarot zwischen 264.8 cm-1 und 260.6 cm-1 sind gut miteinander vergleichbar.
Die Einflußnahmen der strukturellen und funktionellen Unterschiede der Huminsäuren spiegeln sich in unterschiedlichen Verschiebungen der Uranylbanden wieder.

Keywords: FTIR-Spektroskopie; Huminsäuren, Uranyl-Huminsäurekomplexe

  • Lecture (Conference)
    Tagung der Deutschen Gesellschaft für Moor- und Torfkunde e.V.,Sektion IV - Physik, Chemie, Biologie Bad Elster, 07.-09.10.1999

Permalink: https://www.hzdr.de/publications/Publ-2202

Small Angle Scattering Study Concerning the Effect of Residual Elements on the Radiation Behaviour of Iron Alloys

Ulbricht, A.; Böhmert, J.; Große, M.; Strunz, P.

Abstract

For better understanding of the influence of the deleterious elements on the neutron embrittlement of reactor pressure vessel steels, the microstructural evolution due to neutron irradiation was investigated by SANS experiments at ternary iron alloys with different contents of copper and phosphorus. In every case irradiation produced nanoscaled inhomogeneities. The volume fraction of the inhomogeneities incrases with the copper content but not with the phosphorus content. Surprisingly, the high-pure alloy shows a relatively high irradiation effect. The irradiation defects vary in type and kinetic of evolution for the different alloys.

Keywords: small angle scattering; radiation damage; neutron embrittlement; iron alloy

  • Lecture (Conference)
    ECNS'99, 2. European Conference on Neutron Scattering, Sept. 1999, Budapest, PHYSICA B 276-278 (2000) 936-938
  • Physica B 276-278 (2000) 936-938

Permalink: https://www.hzdr.de/publications/Publ-2201

Einfluß der Ionenimplantation auf die Festigkeit von Quarzglas

Deshkovskaya, A. A.; Richter, E.

  • Lecture (Conference)
    28. Int. Konf. Physik der Wechselwirkung geladener Teilchen mit kristallinen Materialien, Moskau, May 25 - 27, 1998

Permalink: https://www.hzdr.de/publications/Publ-2200

New aspects in the design of silicon detectors for particle spectroscopy

von Borany, J.

  • Invited lecture (Conferences)
    1st Dresden Protection Symposium on "New Aspects of Radiation Measurements, Dosimetry and Alphaspectrometry", Dresden , March, 4-6, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2199

Computer simulations on thin film growth of superhard materials

Albe, K.

  • Invited lecture (Conferences)
    4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan,Sept. 15-19, 1998 (invited lecture)

Permalink: https://www.hzdr.de/publications/Publ-2198

Non-local approach to modeling of nanocluster evolution in ion implanted layers

Borodin, V. A.; Heinig, K.-H.; Schmidt, B.

  • Lecture (Conference)
    E-MRS'98, Strasbourg, France, June 16-19, 1998

Permalink: https://www.hzdr.de/publications/Publ-2197

High Sensitive Thermal Sensors in Heat Spreading Diamond for Industrial Application

Bonhaus, J.; Harlander, T.; Borchert, D.; Ecke, G.; Fontaine, F.; Fahrner, W. R.

  • Lecture (Conference)
    IEEE Int. Symp. on Industrial Electronics (ISIE `98) , Pretoria, South Africa, July 7 - 10, 1998
  • Contribution to proceedings
    IEEE International Symposium on Industrial Electronics, proceedings vol. 1, 2 (1998) p. 157

Permalink: https://www.hzdr.de/publications/Publ-2195

Ion beam synthesis: a novel method of producing (SiC)1-x(AIN)x layers

Yankov, R. A.; Fukarek, W.; Hatzopoulos, N.; Voelskow, M.; Kreißig, U.; Brauer, G.; Anwand, W.; Heera, V.; Skorupa, W.

  • Mat. Sci. Forum 264-268 (1998) 753
  • Lecture (Conference)
    Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997

Permalink: https://www.hzdr.de/publications/Publ-2194

Investigation of ion-implantation induced damage in 6H-SiC by RBS/C and PAS

Wirth, H.; Anwand, W.; Brauer, G.; Voelskow, M.; Panknin, D.; Skorupa, W.; Coleman, P. G.

  • Mat. Sci. Forum 264-268 (1998) 729

Permalink: https://www.hzdr.de/publications/Publ-2193

GRID spectroscopy - a new nuclear method for lattice site localization of foreign atoms

Wesch, W.; Karmann, A.; Börner, H. G.; Jentschel, M.; Heinig, K.-H.

  • Nucl. Instr. Meth. B136-138 (1998) 494
  • Lecture (Conference)
    13th Int. Conf. on Ion Beam Analysis, Lissabon, Portugal, July 28 -August 2, 1997

Permalink: https://www.hzdr.de/publications/Publ-2192

Cross-sectional micro-Raman Spectroscopy: a tool for structural investigations of thin polytypic SiC layers

Werninghaus, T.; Zahn, D.; Yankov, R. A.; Mücklich, A.; Pezoldt, J.

  • Mat. Sci. Forum 264-268 (1998) 661
  • Lecture (Conference)
    Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997

Permalink: https://www.hzdr.de/publications/Publ-2191

Ion bombardment induced relaxation of strained AlGaAs/GaAs heterostructures studied by the complementary use of RBS-channeling and X-ray synchrotron radiation

Turos, A.; Wierzchowski, W.; Wieteska, K.; Wendler, E.; Wesch, W.; Graeff, W.; Grötzschel, R.; Strupinski, W.

Abstract

AlxGa1-xAs epitaxial layers grown on semi-insulating GaAs (SI-GaAs) substrates with x=0,25 and on in-doped GaAs with x= 0,45 were implanted at room temperature with 1.5 MeV Se ions to fluences ranging from 0,6x1014 to 4x1014 at/cm2 . Implanted crystals were analyzed with 1.8 MeV 4He ions using the RBS/channeling technique. In order to determine the defect structure and their depth profiles measurements were carried out at two different temperatures: 295 and 105 K. XRD with synchrotron beams was used for structural analysis. White beam topography was used to detect lattice deformation and strain relaxation. The lattice parameters were determined by rocking curve measurements with a monochromatic beam. For all samples a signifcant tetragonalization of the implanted region was observed. For the layers grown on SI-GaAs the lattice distortion increases with increasing ion dose until a critical lattice strain is attained. At that point the complete relaxation of the epitaxial layer occurs. In contrast, no relaxation was observed for layers grown on practically defect free indoped substrates. The mechanism of this transformation is attributed to the much higher dislocation density in the SI-GaAs substrate. Nucleation of new dislocations at defects produced by ion implantation and their interaction with threading dislocations leads to the strain relaxation by plastic
deformation of epitaxial layers.

  • Nucl. Instr. Meth. B136-138 ( 1998) 1062

Permalink: https://www.hzdr.de/publications/Publ-2190

Conversion algorithm for ERDA multielement spectra and its application to thin-film problems

Spaeth, C.; Richter, F.; Grigull, S.; Kreißig, U.

Abstract

A computer program was designed for the conversion of element-resolved energy spectra obtained from elastic recoil
detection analysis into composition depth profles. The algorithm is described in detail. An important feature of the
program is that the contribution of the analyzed elements to the stopping power is accounted for self-consistently. Extensions of the algorithm address the problem of the simultaneous analysis of recoil and forward scattering events, respectively, and of distortions in the recoil spectra due to the presence of target constituents with isotopic distributions that cannot be resolved when using standard ionization chambers for recoil detection. Two examples are given to demonstrate how one may benefit from the capabilities of the conversion program in the context of specifc thin film problems. The first example addresses compositional changes in Si3N4/C bilayers due to N-ion implantation, while the second one is dealing with the problem of impurity accumulation at the hexagonal-to-cubic phase boundary in BN films.

  • Nucl. Instr. Meth. B140 (1998) 243

Permalink: https://www.hzdr.de/publications/Publ-2189

Content of hydrogen in boron-, carbon-, nitrogen-, oxygen-, fluorine- and neon-implanted titanium

Soltani-Farshi, M.; Baumann, H.; Rück, D.; Richter, E.; Kreißig, U.; Bethge, K.

  • Surf. Coat. Technol. 103-104 (1998) 299
  • Lecture (Conference)
    SMMIB 97, Gatlinburg, TE, USA, Sept. 1997

Permalink: https://www.hzdr.de/publications/Publ-2188

Positron Studies of defects in nitrogen and carbon implanted titanium

Soltani-Farshi, M.; Baumann, H.; Anwand, W.; Brauer, G.; Coleman, P.; Richter, E.; Kreißig, U.; Bethge, K.

  • Contribution to external collection
    Mat. Res. Soc. Symp. Proc. 527 (1998) 81

Permalink: https://www.hzdr.de/publications/Publ-2187

Untersuchungen zum Korrosionsverhalten von Magnesium nach Ionenimplantation

Schneider, M.; Nocke, K.; Richter, E.

  • Galvanotechnik 80 (1998) 2524

Permalink: https://www.hzdr.de/publications/Publ-2186

Angle dependent Mössbauer spectroscopy on ß-FeSi2 single crystals

Reuther, H.; Behr, G.; Dobler, M.; Teresiak, A.

  • Hyperfine Interactions (c) 3 (1998) 385

Permalink: https://www.hzdr.de/publications/Publ-2185

Investigation of the calcium content in joint cartilage: Is it connected with (early arthrotic) changes in cartilage structure?

Reinert, T.; Butz, T.; Flagmeyer, R.-H.; Jankuhn, S.; Vogt, J.; Gründer, W.; Kanowski, M.; Wagner, M.; Werner, A.; Grambole, D.; Herrmann, F.

Abstract

This paper describes investigations using the Particle Induced X-ray Emission method (PIXE) to evaluate the con-
centration of Ca together with that of other elements (S, Cl, and K) across the articular cartilage of domestic pigs in
order to verify a putative influence of calcium on the structural changes in early arthrotic stage, derived from NMR
microscopic imaging. The measurements were carried out with focused ion beams of a lateral resolution down to
20 lm. The main matrix components (C, N, O) were evaluated from proton backscattering spectra.

Related publications

  • Nucl. Instr. Meth. B136-138 (1998) 936
  • Lecture (Conference)
    13th Int. Conf. on Ion Beam Analysis (IBA-13), Lisboa, Portugal, July 27 - Aug. 1, 1997

Permalink: https://www.hzdr.de/publications/Publ-2184

Strong blue and violet light emission from silicon- and germanium-implanted silicon-dioxide films

Rebohle, L.; Tyschenko, I. E.; von Borany, J.; Schmidt, B.; Grötzschel, R.; Markwitz, A.; Yankov, R. A.; Fröb, H.; Skorupa, W.

  • Contribution to external collection
    Mat. Res. Soc. Symp. Proc. 486 (1998) 175

Permalink: https://www.hzdr.de/publications/Publ-2183

Strong blue and violet photo- and electroluminescence from Ge- and Si-implanted silicon dioxide

Rebohle, L.; von Borany, J.; Grötzschel, R.; Markwitz, A.; Schmidt, B.; Tyschenko, I. E.; Skorupa, W.; Fröb, H.; Leo, K.

Abstract

The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 films thermally-grown on a Si substrate have been investigated and compared to those of Si-implanted SiO2 films. It is found that the blue-violet PL from both Si and Ge-rich layers reaches a maximum after annealing at 500°C for 30 min. The PL and EL from Ge-implanted SiO2 are distinctly higher than that from Si-implanted layers and well visible for the naked eye. The EL spectrum from the Ge-implanted oxide annealed at 1000 °C correlates very well with the PL one and shows a linear dependence on the injected current. The neutral oxygen vacancy is assumed to be responsible for the observed luminescence. In the case of Ge the microstructure after high temperature annealing is studied.

  • Phys. Stat. Sol. (a) 165 (1998) 31

Permalink: https://www.hzdr.de/publications/Publ-2182

Studies of buried (SiC)1-x(AIN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC

Pezoldt, J.; Yankov, R. A.; Voelskow, M.; Brauer, G.; Anwand, W.; Heera, V.; Skorupa, W.; Coleman, P.

  • Contribution to external collection
    Proc. 7th Int. Conf. Defect Recognition and Image Processing of Semicond. (DRIP VII) Inst. Phys. Conf. Ser. No. 160 (1998) IOP Publ. Ltd. Bristol, 1998, 335

Permalink: https://www.hzdr.de/publications/Publ-2177

Raman scattering analysis of defects in 6H-SiC induced by ion implantation

Perez-Rodriguez, A.; Gonzalez-Varona, O.; Calvo-Barrio, L.; Morante, J. R.; Wirth, H.; Panknin, D.; Skorupa, W.

  • Contribution to external collection
    Mat. Sci. Forum 258 - 263 (1998) 727

Permalink: https://www.hzdr.de/publications/Publ-2176

Hydrogen incorporation into Cu-III-VI 2 chalcopyrite semiconductors

Otte, K.; Lippold, G.; Grambole, D.; Herrmann, F.; Schlemm, H.; Schindler, A.; Bigl, F.

Abstract

We implanted H3+ at 300 eV into Cu-chalcopyrite semiconductors at temperatures between 50 °C and 300 °C. The surface chemistry is similar to the previously reported behavior of CuInS2 implanted with a H2+, H+ low energy ion beam with respect to secondary phase etching. We also found an increase of radiative recombination (photoluminescence), which had been attributed to defect passivation and, hence, as an indicator of hydrogen incorporation. Under the 300 eV H3+ implantation conditions, however, we observed neither a hydrogen concentration in a few hundred nm surface range exceeding the NRA detection limit of about l x exp(19) cm-3 nor a pronounced stoichiometry variation in the ternary material, as proved by Raman measurements.
We conclude, therefore, that a 300 eV H3+ implantation introduces significantly less atomic hydrogen into the volume of the sample than previously reported for other beam compositions under similar temperature and current density conditions. This could be a result of the very low energy of less than 100 eV which can be expected for atomic H produced by dissociation of 300 eV H3+ at the surface, making the instant out-diffusion into the high vacuum of the implantation chamber a favored process.

  • Poster
    MRS-Spring Meeting, San Francisco, USA, April 13 - 17, 1998
  • Materials Research Society Symposium Proceedings 513(1998), 275

Permalink: https://www.hzdr.de/publications/Publ-2175

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