Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
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Only approved publications
42443 Publications
Crystal-GRID: Current status and prospects for experimental studies of atomic collisions in solids.
Jentschel, M.; Hauschild, T.; Börner, H. G.; Heinig, K.-H.
Abstract
The Doppler effect of electromagnetic radiation represents a very direct indicator to study the motion of emitting particles. In the Crystal-GRID technique one uses the ultra high resolution power of the crystal spectrometers GAMS4 and GAMS5 to measure the Doppler broadening of $\gamma$ radiation emitted from excited nuclei. Thus it represents a new nuclear probe for the direct study of atomic motion in solids at kinetic energies of several hundreds of eV.
A detailed description of the experimental technique will be given together with an overview on already performed experiments using massive single crystals
of TiO2, NaCl, Ni and Cr. In these experiments the comparison of experimental data to predictions deduced from Molecular Dynamics simulations has allowed to obtain new repulsive interatomic potentials.
The currently used double flat crystal geometry of the spectrometers has allowed to use only massive targets. Recent technical improvements of the GAMS5 spectrometer towards a double bent crystal geometry
will allow to extend the technique to studies of crystalline layers as they may result from ion implantation. The current status of the spectrometer and the expected capabilities will be presented.
Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; TiO2; NaCl; Ni; Cr
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Poster
ICACS-18, Odense, Denmark, August 3-8, 1999
Permalink: https://www.hzdr.de/publications/Publ-2281
Study of Interatomic Potentials in ZnS using Crystal-GRID high-precision gamma spectroscopy and MD simulations
Hauschild, T.; Jentschel, M.; Heinig, K.-H.; Börner, H. G.; Möller, W.
Abstract
Crystal-GRID measurements have been performed with ZnS single crystals. A new Crystal-GRID potential could be determined by splining a Stillinger-Weber like equilibrium potential to screened Coulomb potentials. The new potential is fitted to experimental data containing information about the energy range of about 10 to 500 eV and differs significantly from the screened Coulomb potentials. The nuclear level life time of the 3221 keV level in 33S has been determined to be (48.8 +/- 0.7) fs. Furthermore the predicted asymmetry of a Crystal-GRID line shape could be observed for the first time.
Keywords: Crystal-GRID; gamma ray spectroscopy; interatomic potential; Molecular Dynamics simulation; nuclear level lifetime; ZnS
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Lecture (Conference)
ICACS-18, Odense, Denmark, August 3-8, 1999
Permalink: https://www.hzdr.de/publications/Publ-2280
Ion beam processing for silicon-based light emission
Skorupa, W.
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Lecture (Conference)
XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998
Permalink: https://www.hzdr.de/publications/Publ-2279
Beta-SiC on SiO2 formed by ion implantation and bonding for micromechanical applications
Serre, C.; Romano-Rodriguez, A.; Perez-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Kögler, R.; Skorupa, W.
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Lecture (Conference)
E-MRS'98, Strasbourg, France, June 16 - 19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2278
Bonding and etch-back of ion beam synthesized beta-SiC for SiCOI formation
Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J. R.; Fonseca, L.; Acero, M. C.; Esteve, J.; Kögler, R.; Skorupa, W.
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Lecture (Conference)
NATO Advanced Workshop "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", Kiev, Ukraine, Oct. 1998
Permalink: https://www.hzdr.de/publications/Publ-2277
Characterisation of Al-implanted LiF by a monoenergetic positron beam
Sendezera, E. J.; Davidson, A. T.; Fischer, C. G.; Connell, S. H.; Sellschop, J. P. F.; Anwand, W.; Brauer, G.; Nicht, E.-M.
-
Lecture (Conference)
8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998
Permalink: https://www.hzdr.de/publications/Publ-2276
Non-destructive analysis of elements with low atomic numbers (Na K) in artifacts using X-ray fluorescence analysis
Schreiner, M.; Mantler, M.; Neelmeijer, C.; Mäder, M.
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Lecture (Conference)
31th Int. Symp. on Archaeometry, Budapest, Hungary, April 27 - May 1, 1998
Permalink: https://www.hzdr.de/publications/Publ-2275
Temperaturverhalten von durch Hochdosisimplantation hergestellten Al-Fe-Legierungen
Reuther, H.
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Lecture (Conference)
IX. Mößbauerkolloquium, Freiberg, Sept. 28-30, 1998
Permalink: https://www.hzdr.de/publications/Publ-2274
Charakterisierung von durch Ionenimplantation hergestellten Fe-Al-Schichten mittels Augerelektronen- und Mößbauerspektroskopie
Reuther, H.
-
Lecture (Conference)
10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998
Permalink: https://www.hzdr.de/publications/Publ-2273
Strong blue electroluminescence from Ge-rich silicondioxide-on-silicon formed by ion beam synthesis
Rebohle, L.; von Borany, J.; Tyschenko, I. E.; Skorupa, W.
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Lecture (Conference)
XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998
Permalink: https://www.hzdr.de/publications/Publ-2272
Is there still any hope for blue luminescence from silicon?
Rebohle, L.; von Borany, J.; Markwitz, A.; Skorupa, W.
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Lecture (Conference)
E-MRS´98, Strasbourg, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2271
The Installations for Materials Research on ROBL at the ESRF
Prokert, F.; Betzl, M.; Eichhorn, F.; Matz, W.; Schell, N.
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Lecture (Conference)
Jahrestagung DGK, Karlsruhe, März 1998
Permalink: https://www.hzdr.de/publications/Publ-2270
Microscopic processes of damage production during ion implantation studied by combining time-ordered BCA with MD simulations
Posselt, M.
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Lecture (Conference)
MRS Spring Meeting, San Francisco, CA, USA, April 13-17, 1998
Permalink: https://www.hzdr.de/publications/Publ-2269
Pulsed plasma beam mixing of Ti and Mo on Al2O3 substrates
Piekoszewski, J.; Wieser, E.; Grötzschel, R.; Reuther, H.; Werner, Z.; Langner, A.
-
Lecture (Conference)
11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2268
Formation of surface Pd-Ti alloys using pulsed plasma beams
Piekoszewski, J.; Werner, Z.; Wieser, E.; Langner, J.; Grötzschel, R.; Reuther, H.; Jagielski, J.
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Lecture (Conference)
ION'98, Kazimierz Dolny, Poland, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2267
Structural and compositional characterisation of N+ and Al+ co-implanted 6H-SiC using optical methods
Pezoldt, J.; Yankov, R. A.; Fukarek, W.; Mücklich, A.; Fontaine, F.; Skorupa, W.; Werninghaus, T.; Zahn, D.
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Lecture (Conference)
9th Europ. Conf. on Diamond, Diamond-like Materials, Nitrides, and Silicon Carbide, Crete, Greece, Sept. 13-18, 1998
Permalink: https://www.hzdr.de/publications/Publ-2266
A novel (SiC)1-x(AIN)x compound synthesized using ion beams
Pezoldt, J.; Yankov, R. A.; Mücklich, A.; Fukarek, W.; Reuther, H.; Skorupa, W.
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Lecture (Conference)
E-MRS´98, Strasbourg, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2265
Nitriding of stainless steel by low energy ion implantation - the nitriding kinetics
Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.
Abstract
Stainless steels are known for their excellent corrosion resistance based on a native surface oxide layer and a moderate hardness leading to short life times in applications with intensive wear. Hence, surface hardening could greatly enlarge their range of applications. However, stainless steels are considered as difficult candidates for surface hardening. Nitriding by low-energy ion implantation is a promising technique. At target temperatures of about 400°C the formation of a highly nitrogen enriched layer has been observed. This layer exhibits an increased surface hardness and a reduced wear without adversely affecting the excellent corrosion resistance.
This work focuses on the nitriding kinetics which are not well understood. Experimental data has been obtained by time and depth resolved elemental analyses using elastic recoil detection (ERD) during the nitriding process. The ERD technique has been optimised for time resolved in-situ data acquisition. Fast nitrogen diffusion, an energy and current density dependence of the thickness of the nitrogen enriched layer and an influence of the surface oxide layer have been observed. The physical origin of these phenomena will be revealed and a simple model of the nitriding process taking into account the governing physical processes, i. e. sputtering, recovering of the surface from the residual gas and diffusion in the solid, will be presented.
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Lecture (Conference)
11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2264
Nitrogen transport during plasma ion nitriding of austenitic stainless steel - the role of the native surface oxide layer
Parascandola, S.; Kruse, O.; Richter, E.; Möller, W.
Abstract
Austenitic stainless steels are widely used due to their advantageous combination of properties as ductility, strength and excellent corrosion resistance. However, due to their moderate hardness they are not suited for abrasively stressed parts. Hence, the market potential of austenitic stainless steels could be greatly enhanced by a process that allows surface hardening without negatively affecting the other properties. Standard techniques as heat treatment, carburizing and conventional nitriding fail. Recently it has been shown that ion nitriding at moderate temperature is a promising candidate for surface hardening austenitic stainless steels. Surface hardness increased by factors of 4 to 5 leading to wear resistance increases by more than two orders of magnitude have been achieved without compromising the excellent corrosion resistance. It has been reported that the nitriding velocity depends on the ion energy and on the current density and that the passivating surface oxide layer of the austenitic stainless steels may play an important role. In a systematic study the influence of the surface oxide layer on the nitriding efficiency of ion nitriding austenitic stainless steel at moderate temperatures is analyzed by determining the retained nitrogen dose for fixed process times and temperatures but different oxygen partial pressures, ion current densities and ion energies. Additionally, for some selected process parameters during processing, the composition of the near surface region (down to 150nm) regarding the nitrogen, the carbon and the oxygen content is obtained by an in situ experiment.
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Lecture (Conference)
Int. Conf. on Metallurgical Coatings and Thin Films, San Diego, April 27 - May 1, 1998
Permalink: https://www.hzdr.de/publications/Publ-2263
Correlation of electrical and microstructural properties after high dose aluminium implantation into 6H-SiC
Panknin, D.; Wirth, H.; Mücklich, A.; Skorupa, W.
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Lecture (Conference)
ECSCRM '98 (2nd European Conf. on Silicon Carbide and Related Materials), Montpellier, Sept. 2 - 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2262
Positron affinities and deformation potentials in cubic semiconductors
Panda, B. K.; Brauer, G.
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Lecture (Conference)
30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998 - Acta Physica Polonica, No. 4, Vol. 95 (1999), 641-646
Permalink: https://www.hzdr.de/publications/Publ-2261
Hydrogen incorporation into Cu-III-VI2 chalcopyrite semiconductors
Otte, K.; Schlemm, H.; Schindler, A.; Bigl, F.; Lippold, G.; Grambole, D.; Herrmann, F.
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Lecture (Conference)
MRS Spring Meeting, San Francisco, USA, April 13 -17, 1998
Permalink: https://www.hzdr.de/publications/Publ-2260
Johann Gregorius Höroldt fecit?
Neelmeijer, C.; Mäder, M.; Pietsch, U.; Ulbricht, H.; Walcha, H.-M.
Abstract
"J. G. Höroldt fec. et inv": Gemacht und erdacht von Johann Gregorius Höroldt - findet man als Signatur auf dem Boden der prachtvoll dekorierten "Höroldt-Vase" in der Porzellansammlung im Zwinger. Das typische Höroldt-Motiv findet sich wieder auf einem Walzenkrug, ebenfalls aus weißem Porzellan als Träger. Mittels Ionenstrahlanalyse an Luft gelang es am 5 MV Tandembeschleuniger des FZ Rossendorf, zerstörungsfrei aufzuklären, dass die Pigmente der Schmelzfarben auf der Vase der überlieferten "Höroldt'schen Palette" entsprechen. Im Gegensatz dazu wurde z. B. Chrom-Grün am Walzenkrug gefunden, was eindeutig auf eine Kopie hinweist.
Keywords: Ionenstrahlanalyse an Luft; zerstörungsfrei; PIXE; Malfarben; Porzellan
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Lecture (Conference)
Jahrestagung der GDCh, Archäometrie und Denkmalpflege, Würzburg, Sept. 23 - 25, 1998 -
Lecture (Conference)
Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 78 - 80 -
Contribution to external collection
Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 78 - 80
Permalink: https://www.hzdr.de/publications/Publ-2259
Paramagnetische Störstellen in Si nach Implantation von Pd
Näser, A.; Gelhoff, W.; Yankov, R. A.
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Lecture (Conference)
DPG-Tagung, Regensburg, Germany, March 23, 1998
Permalink: https://www.hzdr.de/publications/Publ-2258
EPR identification of a shallow donor state of cadmium in silicon
Näser, A.; Gehlhoff, W.; Overhof, H.; Yankov, R. A.
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Lecture (Conference)
8th Int. Conf. on Shallow Level Centres in Semiconductors, Montpellier, France, July 27-30, 1998
Permalink: https://www.hzdr.de/publications/Publ-2257
Wear properties of TiN coated cutting tools implanted with nitrogen ions
Narojczyk, J.; Piekoszewski, J.; Richter, E.; Werner, Z.
-
Lecture (Conference)
ION´98, Kazimierz Dolny, Poland, June 16-19, 1998 - Nukleonika Vol. 44, No. 21, p. 225-230, 1999
Permalink: https://www.hzdr.de/publications/Publ-2256
Beam line implantation of boron into hard metals
Mrotschek, I.; Günzel, R.; Matz, W.; Möller, W.; Anishchik, V.
-
Lecture (Conference)
ION´98, Kazimierz Dolny, Poland, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2255
Plasma-Immersions-Ionenimplantation
Möller, W.
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Invited lecture (Conferences)
Sommerschule "Nukleare Sonden und Ionenstrahlen", Bad Blankenburg, Sept., 1998 (invited lecture) -
Lecture (Conference)
VDE/ITG-Seminar "Teilchenstrahl- und Plasmatechnik", Helmsdorf b. Dresden, March 7, 1997
Permalink: https://www.hzdr.de/publications/Publ-2254
Schichtanalyse mit Ionenstrahlen
Möller, W.
-
Invited lecture (Conferences)
W. E.-Heraeus-Ferienkurs, Chemnitz, Sept. 7, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2253
Plasma immersion ion implantation for diffusive treatment
Möller, W.
-
Invited lecture (Conferences)
PSE'98, Garmisch-Partenkirchen, Sept. 14 - 18, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2252
Vorsorgeuntersuchung an historischem Glas
Mäder, M.; Neelmeijer, C.; Schreiner, M.
-
Lecture (Conference)
Jahrestagung der GDCh, Archäometrie und Denkmalpflege, Würzburg, Sept. 23 -25, 1998 -
Lecture (Conference)
Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 149 - 151 -
Contribution to external collection
Archäometrie und Denkmalpflege - Kurzberichte 1998, S. 149 - 151
Permalink: https://www.hzdr.de/publications/Publ-2251
Composition analysis of medieval glass using PIXE
Mäder, M.; Neelmeijer, C.; Schreiner, M.
-
Lecture (Conference)
8th. Int. Conf. on PIXE and its Analytical applications, Lund, Sweden, June 14-18, 1998
Permalink: https://www.hzdr.de/publications/Publ-2250
Modeling high temperature co-implantation of N+-and Al+-ions into SiC: the effects of stress on the implant and damage distributions
Kulikov, A. V.; Trushin, Y. V.; Yankov, R. A.; Kreißig, U.; Fukarek, W.; Mücklich, A.; Skorupa, W.; Pezoldt, J.
-
Lecture (Conference)
E-MRS´98, Strasbourg, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2249
Theoretical and experimental studies of (AIN)(1-x)(SiC)xlayer structures formed by N+ and Al+ co-implantation 6H-SiC
Kulikov, A. V.; Pezoldt, J.; Rybin, P. V.; Skorupa, W.; Trushin, Y. V.; Yankov, R. A.
-
Lecture (Conference)
Int.Workshop Nondestructive Testing and Computer Simulations in Science and Engineering, E 2, St. Petersburg, Russia, June 8 - 12, 1998
Permalink: https://www.hzdr.de/publications/Publ-2248
Dynamic in-situ diagnostics using ERD analysis
Kruse, O.; Grötzschel, R.
-
Lecture (Conference)
ION'98, Kazimierz Dolny, Poland, June 16 - 19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2247
Tiefenselektive Phasenanalyse der Fe-Silizidbildung in Fe-ionenimplantiertem Si mittels DCEMS
Kruijer, S.; Walterfang, M.; Keune, W.; Dobler, M.; Reuther, H.
-
Lecture (Conference)
DPG-Frühjahrstagung, Regensburg, March 23-27, 1998
Permalink: https://www.hzdr.de/publications/Publ-2246
Deposition of nanoscaled multilayer structures by ion beam assisted deposition
Kolitsch, A.; Wang, X.; Möller, W.
-
Lecture (Conference)
5th DANFYSIK User Meeting, Brindisi, Italien, Sept. 1998
Permalink: https://www.hzdr.de/publications/Publ-2245
Development of a user data base system for ion implanter operation
Kolitsch, A.; Schöneich, J.
-
Lecture (Conference)
5th DANFYSIK User Meeting, Brindisi, Italy, Sept. 1998
Permalink: https://www.hzdr.de/publications/Publ-2244
BN based multilayers by ion beam assisted deposition
Kolitsch, A.; Wang, X.; Möller, W.
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Lecture (Conference)
MRS Fall Meeting 1998, , Boston, USA, Dec. 1998
Permalink: https://www.hzdr.de/publications/Publ-2243
Defect agglomeration in ion implanted silicon away from RP
Kögler, R.; Yankov, R. A.; Skorupa, W.
-
Lecture (Conference)
XIIth Int. Conf. Ion Implantation Technology (IIT´98), Kyoto, Japan, June 22-26, 1998
Permalink: https://www.hzdr.de/publications/Publ-2242
Technische Sitzungen der Sektion 2 (Thermo- und Fluiddynamik) der Jahrestagung Kerntechnik 1999
Knebel, J.; Grötzbach, G.; Lischke, W.; Rohde, U.; Schaffrath, A.
Abstract
Auf der Jahrestagung Kerntechnik 1999 in Karlsruhe wurden in der Sektion 2 vier technische Sitzungen zu den Themenschwerpunkten: Stabilitätsuntersuchungen in Zweiphasenströmungen, DWR Integralexperimente, Experimente und Code-Validierung für WWER-Reaktoren, 3D Phänomene, Methoden und Rechnungen sowie 1 Postersession durchgeführt. Die einzelnen Beiträge werden in dem vorliegenden Artikel zusammengefaßt.
Keywords: Jahrestagung Kerntechnik; Thermo- und Fluiddynamik; Stabilitätsuntersuchungen; WWER-Reaktoren; 3D Phänomene
- atomwirtschaft - atomtechnik 44 (1999), Heft 7, S. 419-423
Permalink: https://www.hzdr.de/publications/Publ-2241
Defects remaining in MeV-ion-implanted Si away from the peak of the nuclear energy deposition
Kögler, R.; Yankov, R. A.; Posselt, M.; Danilin, A.; Skorupa, W.
-
Lecture (Conference)
E-MRS´98, Strasbourg, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2240
Distribution of gettering centres at a buried amorphous layer in Si
Kögler, R.; Eichhorn, F.; Mücklich, A.; Skorupa, W.; Danilin, A.
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Lecture (Conference)
11th Int. Conf. on Ion Beam Modification of Materials, Amsterdam,The Netherlands, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2239
Nanopatterning of thin CoSi2 layers by local oxidation
Kappius, L.; Antons, A.; Dolle, M.; Trinkaus, H.; Mesters, S.; Bochem, H.-P.; Mantl, S.; Heinig, K.-H.
-
Lecture (Conference)
Spring Meeting, San Francisco, CA, USA, April 13-17, 1998
Permalink: https://www.hzdr.de/publications/Publ-2238
Hydrogen isotope inventories in plasma facing components of ASDEX UPGRADE
Krieger, K.; Maier, H. J.; Grambole, D.; Schleussner, D.; Franzen, P.
-
Lecture (Conference)
17th IAEA Fusion Energy Conference, Yokohama, Japan, Oct. 19 -24, 1998
Permalink: https://www.hzdr.de/publications/Publ-2236
Lattice site location of foreign atoms measured by the GRID method
Karmann, A.; Wesch, W.; Börner, H. G.; Jentschel, M.; Heinig, K.-H.
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Lecture (Conference)
Int. Workshop on Applications of High-Precision gamma-Spectroscopy, University of Notre Dame, Notre Dame, IL, USA, July 1 - 3, 1998
Permalink: https://www.hzdr.de/publications/Publ-2234
The GRID technique: current status and new trends
Jentschel, M.; Börner, H. G.; Heinig, K.-H.; Doll, C.
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Lecture (Conference)
Int. Workshop on Applications of High-Precision (-Spectroscopy, University of Notre Dame, Notre Dame, IL, USA, July 1 - 3, 1998
Permalink: https://www.hzdr.de/publications/Publ-2233
Structural analysis of Si/Fe and Mo/Fe ion-beam mixed layers
Jagielski, J.; Kopcewicz, M.; Turos, A.; Eichhorn, F.
-
Lecture (Conference)
11th. Int. Conf. on Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2232
Growth of ion-beam deposited a-C and a-C:H films: molecular-dynamics simulations using empirical many-body potential expressions
Jäger, H.-U.
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Lecture (Conference)
9th Europ. Conf. on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide, Crete, Greece, Sept. 13-18, 1998
Permalink: https://www.hzdr.de/publications/Publ-2231
Untersuchung historischer menschlicher Knochen mit Ionen-Mikrosonde
Jankuhn, S.; Butz, T.; Flagmeyer, R.-H.; Reinert, T.; Vogt, J.; Barckhausen, B.; Hammerl, J.; Protsch Von Zieten, R.; Grambole, D.; Herrmann, F.; Bethge, K.
-
Lecture (Conference)
Frühjahrstagung der Fachverbände Chemische Physik, Kurzzeitphysik, Plasmaphysik, Polymerphysik, Bayreuth, March 9 - 13, 1998
Permalink: https://www.hzdr.de/publications/Publ-2230
Heavy-Ion induced damage of crystalline Ge and W at 0.5 to 8 MeV/u range
Huber, H.; Assmann, W.; Karamian, S. A.; Mieskes, H. D.; Nolte, H.; Gazis, E.; Kokkoris, M.; Kossionides, S.; Vlastou, R.; Grötzschel, R.; Mücklich, A.; Prusseit, W.
-
Lecture (Conference)
Int. Conf. on Swift Heavy Ions in Matter ( SHIM-98), Berlin , May 1998 - Nuclear Instruments and Methods in Physics Research B 146 (1998) 309-316
Permalink: https://www.hzdr.de/publications/Publ-2229
Pd diffusion in ZnTe and CdTe
Herrmann, S.; Mahnke, H.-E.; Spellmeyer, B.; Wienecke, M.; Reinhold, B.; Yankov, R. A.; Gumlich, H.-E.
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Lecture (Conference)
E-MRS´98, Strasbourg, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2228
Effects of neutron irradiation on Fe-Cu model alloys and RPV steels probed by positron annihilation and hardness measurements
Hempel, A.; Saneyasu, M.; Tang, Z.; Hasegawa, M.; Brauer, G.; Plazaola, F.; Yamaguchi, S.
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Lecture (Conference)
19th Symp. on Effects of Radiation on Materials, Seattle/WA, June 16-18, 1998
Permalink: https://www.hzdr.de/publications/Publ-2227
A combination of computer simulation methods to predict quantum dot evolution during ion beam synthesis
Heinig, K.-H.; Strobel, M.
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Lecture (Conference)
4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan, Sept.15 - 19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2226
Application of high-resolution gamma-spectroscopy (GRID method) in solid state physics
Heinig, K.-H.; Börner, H. G.; Jentschel, M.
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Invited lecture (Conferences)
Int. Workshop on Applications of High-Precision (-Spectroscopy, University of Notre Dame, Notre Dame, IL, July 1 - 3, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2225
Nanocrystal formation in SiO2: experiments, modelling and computer simulations
Heinig, K.-H.; Schmidt, B.; Markwitz, A.; Grötzschel, R.; Strobel, M.; von Borany, J.
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Invited lecture (Conferences)
E-MRS'98, Strasbourg, France, June 16-19, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2224
What is the physics behind the 3He-4He anomaly?
Neubert, W.; Botvina, A. S.
Abstract
We show that coalescence of nucleons emitted prior to thermalization in highly excited nuclei can explain the anomaly of kinetic energies of helium fragments. This mechanism accomplishes the statistical approach to nuclear rections formerly used to describe intermediate mass fragment production.
Keywords: Intermediate energy hadron -nucleus and nucleus-nucleus interactions; helium isotopes
- European Physical Journal A, Vol. 7, No. 1, pp.101-106
Permalink: https://www.hzdr.de/publications/Publ-2223
Phasenbildung und Standzeiterhöhung von HSS-Bohrern nach Plasma-Immersions-Implantation
Günzel, R.; Mändl, S.; Möller, W.; Hilke, R.; Knösel, E.; Künanz, K.
-
Lecture (Conference)
Werkstoffwoche München, Oct. 12-15, 1998
Permalink: https://www.hzdr.de/publications/Publ-2222
Plasma-Immersions-Implantation ein modernes Verfahren zur Modifizierung von Werkstückoberflächen
Günzel, R.; Brückner, J.; Richter, E.; Möller, W.
-
Lecture (Conference)
Werkstoffwoche München, Oct. 12-15, 1998
Permalink: https://www.hzdr.de/publications/Publ-2221
Proton conducting Ba3Ca1.18Nb1.82O8.73/H2O: Pressure/compositions isotherms in terms of Fermi-Dirac-Statistics
Groß, B.; Marion, S.; Lind, K.; Hempelmann, R.; Grambole, D.; Herrmann, F.
-
Lecture (Conference)
9th Int. Conf. on Solid State Protonic Conductors (SSSPC-9), Bled, Slovenia, Aug. 17 - 21, 1998
Permalink: https://www.hzdr.de/publications/Publ-2220
Fragmentation of Be induced by 1 GeV protons
Andronenko, L. N.; Andronenko, M. N.; Gusev, Y. I.; Kotov, A. A.; Neubert, W.; Petrov, G. E.; Seliverstov, D. M.; Strakovski, I. I.; Vaishnene, L. A.; Yatsoura, V. I.; Zalite, A. Y.
Abstract
Fragment yields and energy spectra of He, Li and Be isotopes have been measured in p+9Be interactions at 1 GeV incident energy at 30 deg. and 126 deg. using a two-arm
spectrometer based on Bragg chambers. The obtained yield ratio of the low abundant
8He to 8Li in the spectator momentum range is compared with published data.
Keywords: fragmentation; cross section; isotope; proton
-
Other report
Preprint NP-36-1999 Nr. 2321 , St.Petersburg Nuclear Physics Institute ,Gatchina, Russia
Permalink: https://www.hzdr.de/publications/Publ-2219
ERDA in-situ studies of atomic transport processes in various materials
Grötzschel, R.; Kreißig, U.; Kruse, O.; Grigull, S.; Parascandola, S.; Schmidt, B.
-
Invited lecture (Conferences)
Int.Conf. on Swift Heavy Ions in Materials Engeneering and Characterization (SHIMEC-98), New Delhi, Oct. 19 - 22, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2218
Hydrogen and deuterium depth profiling in divertor tiles of a fusion experiment by micro-ERDA
Grambole, D.; Herrmann, F.; Behrisch, R.; Hauffe, W.
Abstract
Depth profiling of light elements in the surface layer of solids by means of ERDA is limited to depths smaller than about 1 mu m. In order to measure the distributions
of hydrogen isotopes in larger depth regions such as needed for the divertor tiles from the tokamak fusion experiment ASDEX-Upgrade in the Max-Planck-Institut
fur Plasmaphysik, samples cut from the divertor tiles (about 0.6 mm tungsten on carbon) were bevelled at different angles by mechanical cutting and polishing or by
ion beam slope cutting. The mechanically cut slopes were additionally cleaned and polished by oblique incidence ion beam sputtering with target rotation to avoid
anisotropic etching.
The surface composition along the slope was measured by ERDA with the Rossendorf Nuclear Microprobe, A 10 MeV Si ion beam was focused to about 3 mu m
and scanned linearly across the slope. The hydrogen and deuterium recoils were detected by a surface barrier detector at a recoil angle of 30 degrees after passing
through a 10 mu m thick Al foil for stopping scattered primary ions. Deuterium was found at depths up to about 25 mu m and hydrogen up to 750 mu m on the
samples analysed.
Keywords: micro-ERDA; elastic recoil detection; depth profiling; hydrogen; deuterium
-
Lecture (Conference)
6th Int. Conf. on Nucl. Microprobe Technology and Applications, Stellenbosch, South Africa, Oct. 11 - 16, 1998 - Nuclear Instruments and Methods in Physics Research B 158(1999) 647-652
Permalink: https://www.hzdr.de/publications/Publ-2217
Fragment production in proton interactions with light nuclei
Andronenko, L. N.; Andronenko, M. N.; Seliverstov, D. M.; Neubert, W.
Abstract
Isotopic yield ratios were derived from double-differential cross sections measured in p+9Be and p+12C collisions at 1 GeV. Enhanced 9He yields were found compared to heavier target nuclei.
-
Contribution to proceedings
7th International Conference on Clustering Aspects of Nuclear Structure and Dynamics. Rab, Croatia 1999
Permalink: https://www.hzdr.de/publications/Publ-2216
Ions and electron-irradiation induced deep levels in n-type and p-type 6H-SiC
Gong, M.; Beling, C. D.; Fung, S.; Brauer, G.; Wirth, H. D.; Skorupa, W.; You, Z.-P.
-
Lecture (Conference)
MRS 1998 Spring Meeting, San Francisco, April 13-17, 1998
Permalink: https://www.hzdr.de/publications/Publ-2215
Si1-xGex structures fabricated by focused ion beam implantation
Ganetsos, T.; Tsamakis, D.; Panknin, D.; Mair, G. L. R.; Teichert, J.; Bischoff, L.; Aidinis, C.
-
Lecture (Conference)
Conference in Low Temperature Devices, Toscane, Italy, June 1998 -
Contribution to external collection
J. de Phys. IV 8 (1998) Pr3 - 109
Permalink: https://www.hzdr.de/publications/Publ-2214
Analysis of mechanisms in ECR-PECVD of BN films using in situ ellipsometry
Fukarek, W.; Möller, W.
-
Lecture (Conference)
DACH - Kolloquium, Giengen, Oct. 6-8, 1998
Permalink: https://www.hzdr.de/publications/Publ-2213
Investigation of in-plane anisotropy of IBAD t-BN films
Fukarek, W.; Möller, W.
-
Lecture (Conference)
DACH - Kolloquium, Giengen, Oct. 6-8, 1998
Permalink: https://www.hzdr.de/publications/Publ-2212
In plane anisotropy of IBAD t-BN films
Fukarek, W.; Möller, W.
-
Lecture (Conference)
Gordon Research Conference on Plasma Processing Science, Tilton School, New Hampshire, USA, Aug. 9 - 14, 1998
Permalink: https://www.hzdr.de/publications/Publ-2211
Applications of infrared spectroscopy in materials research
Fukarek, W.
-
Invited lecture (Conferences)
33. Holzhau-Meeting, March 30, April 3, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2210
A slow positron beam investigation of positron-defect interactions in single crystalline synthetic type IB diamonds and a natural type IIB diamond
Fischer, C. G.; Connell, S. H.; Coleman, P. G.; Anwand, W.; Malik, F.; Brauer, G.; Britton, D. T.; Sellschop, J. P. F.
-
Lecture (Conference)
8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surface (SLOPOS - 8), Cape Town, Sept. 6 - 12, 1998
Permalink: https://www.hzdr.de/publications/Publ-2209
Temperature effect on the morphology of helium bubble clusters in silicon
Fichtner, P.; Kaschny, J. R.; Yankov, R. A.; Mücklich, A.; Skorupa, W.
-
Lecture (Conference)
14th Int. Conf. On Electron Microscopy, Cancum, Mexico, Aug. 31-Sept.5, 1998
Permalink: https://www.hzdr.de/publications/Publ-2208
The effects of annealing temperature on the formation of helium filled structures in silicon
Fichtner, P.; Kaschny, J. R.; Behar, M.; Yankov, R. A.; Mücklich, A.; Skorupa, W.
-
Lecture (Conference)
11th Int. Conf. on Ion Beam Modification of Materials (IBMM'98), Amsterdam, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2207
X-ray studies of silicon wafers implanted with MeV Ge++ions
Eichhorn, F.; Sass, J.; Mazur, K.
-
Lecture (Conference)
4th Europ. Conf. on High Resolution X-ray Diffraction and Topography, Durham/GB, Sept. 9 - 12, 1998
Permalink: https://www.hzdr.de/publications/Publ-2206
CEMS-Eisendisilizide-Ionenstrahlverfahren
Dobler, M.
-
Lecture (Conference)
IX. Mößbauerkolloquium Freiberg, Sept. 28-30, 1998
Permalink: https://www.hzdr.de/publications/Publ-2205
Untersuchung der Eisendisilizidbildung nach der Implantation von Fe in Si
Dobler, M.; Reuther, H.
-
Lecture (Conference)
10. Arbeitstagung Angewandte Oberflächenanalytik AOFA 10, Kaiserslautern, Sept. 6-10, 1998
Permalink: https://www.hzdr.de/publications/Publ-2204
Ion bombardment stimulated phase formation in quartz glasses
Deshkovskaya, A. A.; Richter, E.
-
Lecture (Conference)
11.th Int. Conf. on Ion Beam Modification of Materials, Amsterdam, Netherlands, Aug. 31 - Sept. 4, 1998
Permalink: https://www.hzdr.de/publications/Publ-2203
FTIR-Untersuchungen zur Komplexierung von Uran(VI) durch Huminsäuren
Heise, K.-H.; Nicolai, R.; Pompe, S.; Bubner, M.; Klöcking, R.; Bernhard, G.
Abstract
Aufgrund der nur unvollkommen erfaßbaren, keineswegs stabilen chemischen Struktur und Funktionalität von Huminsäuren aus natürlichen Recourcen haben operationell mit HS übereinstimmende, synthetische Polymere als Modellhuminsäuren in vielen Bereichen der experimentellen Wissenschaften Eingang gefunden. Sie sind vor dem Hintergrund der Umweltkontaminationen durch toxische und radiotoxische Schwermetalle besonders für Bindungsstudien mit Metallionen interessant, da ihre Funktionalität durch Variation der Precursoren und der Synthesebedingungen in weiten Grenzen "eingestellt" werden kann.
Wir haben FTIR-spektrometrisch die festen Komplexe von Uran(VI) mit unterschiedlichen, gut charaktersierten Huminsäuren, zwei natürlichen Huminsäuren (Aldrich-Huminsäure und eine aus Moorwasser des "Kleinen Kranichsees" isolierte Huminsäure) sowie drei synthetischen Huminsäuren (zwei Melanoidinfraktionen sowie das Oxidationsprodukt von 3,4,5 Trihydroxybenzoesäure), verglichen. Trotz unterschiedlicher Herkunft der Huminsäuren, die in ihren FTIR-Spektren deutlich wird, scheint die Urananbindung an die Huminsäuren sehr ähnlich zu sein, was durch EXAFS-Untersuchungen an Uranylkomplexen natürlicher Huminsäuren und synthetischer Huminsäuren vom Melanoidintyp gestützt wird. Sowohl die asymmetrischen UO22+-Streckschwingungen im mittleren Infrarot, die wir zwischen 933.5 cm-1 und 923.1 cm-1 registrieren, als auch die UO22+-Deformationsschwingungen im fernen Infrarot zwischen 264.8 cm-1 und 260.6 cm-1 sind gut miteinander vergleichbar.
Die Einflußnahmen der strukturellen und funktionellen Unterschiede der Huminsäuren spiegeln sich in unterschiedlichen Verschiebungen der Uranylbanden wieder.
Keywords: FTIR-Spektroskopie; Huminsäuren, Uranyl-Huminsäurekomplexe
-
Lecture (Conference)
Tagung der Deutschen Gesellschaft für Moor- und Torfkunde e.V.,Sektion IV - Physik, Chemie, Biologie Bad Elster, 07.-09.10.1999
Permalink: https://www.hzdr.de/publications/Publ-2202
Small Angle Scattering Study Concerning the Effect of Residual Elements on the Radiation Behaviour of Iron Alloys
Ulbricht, A.; Böhmert, J.; Große, M.; Strunz, P.
Abstract
For better understanding of the influence of the deleterious elements on the neutron embrittlement of reactor pressure vessel steels, the microstructural evolution due to neutron irradiation was investigated by SANS experiments at ternary iron alloys with different contents of copper and phosphorus. In every case irradiation produced nanoscaled inhomogeneities. The volume fraction of the inhomogeneities incrases with the copper content but not with the phosphorus content. Surprisingly, the high-pure alloy shows a relatively high irradiation effect. The irradiation defects vary in type and kinetic of evolution for the different alloys.
Keywords: small angle scattering; radiation damage; neutron embrittlement; iron alloy
-
Lecture (Conference)
ECNS'99, 2. European Conference on Neutron Scattering, Sept. 1999, Budapest, PHYSICA B 276-278 (2000) 936-938 - Physica B 276-278 (2000) 936-938
Permalink: https://www.hzdr.de/publications/Publ-2201
Einfluß der Ionenimplantation auf die Festigkeit von Quarzglas
Deshkovskaya, A. A.; Richter, E.
-
Lecture (Conference)
28. Int. Konf. Physik der Wechselwirkung geladener Teilchen mit kristallinen Materialien, Moskau, May 25 - 27, 1998
Permalink: https://www.hzdr.de/publications/Publ-2200
New aspects in the design of silicon detectors for particle spectroscopy
von Borany, J.
-
Invited lecture (Conferences)
1st Dresden Protection Symposium on "New Aspects of Radiation Measurements, Dosimetry and Alphaspectrometry", Dresden , March, 4-6, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2199
Computer simulations on thin film growth of superhard materials
Albe, K.
-
Invited lecture (Conferences)
4th Int. Conf. on Computer Simulation of Radiation Effects in Solids, Okayama, Japan,Sept. 15-19, 1998 (invited lecture)
Permalink: https://www.hzdr.de/publications/Publ-2198
Non-local approach to modeling of nanocluster evolution in ion implanted layers
Borodin, V. A.; Heinig, K.-H.; Schmidt, B.
-
Lecture (Conference)
E-MRS'98, Strasbourg, France, June 16-19, 1998
Permalink: https://www.hzdr.de/publications/Publ-2197
High Sensitive Thermal Sensors in Heat Spreading Diamond for Industrial Application
Bonhaus, J.; Harlander, T.; Borchert, D.; Ecke, G.; Fontaine, F.; Fahrner, W. R.
-
Lecture (Conference)
IEEE Int. Symp. on Industrial Electronics (ISIE `98) , Pretoria, South Africa, July 7 - 10, 1998 -
Contribution to proceedings
IEEE International Symposium on Industrial Electronics, proceedings vol. 1, 2 (1998) p. 157
Permalink: https://www.hzdr.de/publications/Publ-2195
Ion beam synthesis: a novel method of producing (SiC)1-x(AIN)x layers
Yankov, R. A.; Fukarek, W.; Hatzopoulos, N.; Voelskow, M.; Kreißig, U.; Brauer, G.; Anwand, W.; Heera, V.; Skorupa, W.
- Mat. Sci. Forum 264-268 (1998) 753
-
Lecture (Conference)
Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997
Permalink: https://www.hzdr.de/publications/Publ-2194
Investigation of ion-implantation induced damage in 6H-SiC by RBS/C and PAS
Wirth, H.; Anwand, W.; Brauer, G.; Voelskow, M.; Panknin, D.; Skorupa, W.; Coleman, P. G.
- Mat. Sci. Forum 264-268 (1998) 729
Permalink: https://www.hzdr.de/publications/Publ-2193
GRID spectroscopy - a new nuclear method for lattice site localization of foreign atoms
Wesch, W.; Karmann, A.; Börner, H. G.; Jentschel, M.; Heinig, K.-H.
- Nucl. Instr. Meth. B136-138 (1998) 494
-
Lecture (Conference)
13th Int. Conf. on Ion Beam Analysis, Lissabon, Portugal, July 28 -August 2, 1997
Permalink: https://www.hzdr.de/publications/Publ-2192
Cross-sectional micro-Raman Spectroscopy: a tool for structural investigations of thin polytypic SiC layers
Werninghaus, T.; Zahn, D.; Yankov, R. A.; Mücklich, A.; Pezoldt, J.
- Mat. Sci. Forum 264-268 (1998) 661
-
Lecture (Conference)
Int. Conf. on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997
Permalink: https://www.hzdr.de/publications/Publ-2191
Ion bombardment induced relaxation of strained AlGaAs/GaAs heterostructures studied by the complementary use of RBS-channeling and X-ray synchrotron radiation
Turos, A.; Wierzchowski, W.; Wieteska, K.; Wendler, E.; Wesch, W.; Graeff, W.; Grötzschel, R.; Strupinski, W.
Abstract
AlxGa1-xAs epitaxial layers grown on semi-insulating GaAs (SI-GaAs) substrates with x=0,25 and on in-doped GaAs with x= 0,45 were implanted at room temperature with 1.5 MeV Se ions to fluences ranging from 0,6x1014 to 4x1014 at/cm2 . Implanted crystals were analyzed with 1.8 MeV 4He ions using the RBS/channeling technique. In order to determine the defect structure and their depth profiles measurements were carried out at two different temperatures: 295 and 105 K. XRD with synchrotron beams was used for structural analysis. White beam topography was used to detect lattice deformation and strain relaxation. The lattice parameters were determined by rocking curve measurements with a monochromatic beam. For all samples a signifcant tetragonalization of the implanted region was observed. For the layers grown on SI-GaAs the lattice distortion increases with increasing ion dose until a critical lattice strain is attained. At that point the complete relaxation of the epitaxial layer occurs. In contrast, no relaxation was observed for layers grown on practically defect free indoped substrates. The mechanism of this transformation is attributed to the much higher dislocation density in the SI-GaAs substrate. Nucleation of new dislocations at defects produced by ion implantation and their interaction with threading dislocations leads to the strain relaxation by plastic
deformation of epitaxial layers.
- Nucl. Instr. Meth. B136-138 ( 1998) 1062
Permalink: https://www.hzdr.de/publications/Publ-2190
Conversion algorithm for ERDA multielement spectra and its application to thin-film problems
Spaeth, C.; Richter, F.; Grigull, S.; Kreißig, U.
Abstract
A computer program was designed for the conversion of element-resolved energy spectra obtained from elastic recoil
detection analysis into composition depth profles. The algorithm is described in detail. An important feature of the
program is that the contribution of the analyzed elements to the stopping power is accounted for self-consistently. Extensions of the algorithm address the problem of the simultaneous analysis of recoil and forward scattering events, respectively, and of distortions in the recoil spectra due to the presence of target constituents with isotopic distributions that cannot be resolved when using standard ionization chambers for recoil detection. Two examples are given to demonstrate how one may benefit from the capabilities of the conversion program in the context of specifc thin film problems. The first example addresses compositional changes in Si3N4/C bilayers due to N-ion implantation, while the second one is dealing with the problem of impurity accumulation at the hexagonal-to-cubic phase boundary in BN films.
- Nucl. Instr. Meth. B140 (1998) 243
Permalink: https://www.hzdr.de/publications/Publ-2189
Content of hydrogen in boron-, carbon-, nitrogen-, oxygen-, fluorine- and neon-implanted titanium
Soltani-Farshi, M.; Baumann, H.; Rück, D.; Richter, E.; Kreißig, U.; Bethge, K.
- Surf. Coat. Technol. 103-104 (1998) 299
-
Lecture (Conference)
SMMIB 97, Gatlinburg, TE, USA, Sept. 1997
Permalink: https://www.hzdr.de/publications/Publ-2188
Positron Studies of defects in nitrogen and carbon implanted titanium
Soltani-Farshi, M.; Baumann, H.; Anwand, W.; Brauer, G.; Coleman, P.; Richter, E.; Kreißig, U.; Bethge, K.
-
Contribution to external collection
Mat. Res. Soc. Symp. Proc. 527 (1998) 81
Permalink: https://www.hzdr.de/publications/Publ-2187
Untersuchungen zum Korrosionsverhalten von Magnesium nach Ionenimplantation
Schneider, M.; Nocke, K.; Richter, E.
- Galvanotechnik 80 (1998) 2524
Permalink: https://www.hzdr.de/publications/Publ-2186
Angle dependent Mössbauer spectroscopy on ß-FeSi2 single crystals
Reuther, H.; Behr, G.; Dobler, M.; Teresiak, A.
- Hyperfine Interactions (c) 3 (1998) 385
Permalink: https://www.hzdr.de/publications/Publ-2185
Investigation of the calcium content in joint cartilage: Is it connected with (early arthrotic) changes in cartilage structure?
Reinert, T.; Butz, T.; Flagmeyer, R.-H.; Jankuhn, S.; Vogt, J.; Gründer, W.; Kanowski, M.; Wagner, M.; Werner, A.; Grambole, D.; Herrmann, F.
Abstract
This paper describes investigations using the Particle Induced X-ray Emission method (PIXE) to evaluate the con-
centration of Ca together with that of other elements (S, Cl, and K) across the articular cartilage of domestic pigs in
order to verify a putative influence of calcium on the structural changes in early arthrotic stage, derived from NMR
microscopic imaging. The measurements were carried out with focused ion beams of a lateral resolution down to
20 lm. The main matrix components (C, N, O) were evaluated from proton backscattering spectra.
Related publications
-
Visualizing Ultrafast Kinetic Instabilities in Laser-Driven Solids using X-ray …
ROBIS: 36700 references this (Id 2184) publication
- Nucl. Instr. Meth. B136-138 (1998) 936
-
Lecture (Conference)
13th Int. Conf. on Ion Beam Analysis (IBA-13), Lisboa, Portugal, July 27 - Aug. 1, 1997
Permalink: https://www.hzdr.de/publications/Publ-2184
Strong blue and violet light emission from silicon- and germanium-implanted silicon-dioxide films
Rebohle, L.; Tyschenko, I. E.; von Borany, J.; Schmidt, B.; Grötzschel, R.; Markwitz, A.; Yankov, R. A.; Fröb, H.; Skorupa, W.
-
Contribution to external collection
Mat. Res. Soc. Symp. Proc. 486 (1998) 175
Permalink: https://www.hzdr.de/publications/Publ-2183
Strong blue and violet photo- and electroluminescence from Ge- and Si-implanted silicon dioxide
Rebohle, L.; von Borany, J.; Grötzschel, R.; Markwitz, A.; Schmidt, B.; Tyschenko, I. E.; Skorupa, W.; Fröb, H.; Leo, K.
Abstract
The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 films thermally-grown on a Si substrate have been investigated and compared to those of Si-implanted SiO2 films. It is found that the blue-violet PL from both Si and Ge-rich layers reaches a maximum after annealing at 500°C for 30 min. The PL and EL from Ge-implanted SiO2 are distinctly higher than that from Si-implanted layers and well visible for the naked eye. The EL spectrum from the Ge-implanted oxide annealed at 1000 °C correlates very well with the PL one and shows a linear dependence on the injected current. The neutral oxygen vacancy is assumed to be responsible for the observed luminescence. In the case of Ge the microstructure after high temperature annealing is studied.
- Phys. Stat. Sol. (a) 165 (1998) 31
Permalink: https://www.hzdr.de/publications/Publ-2182
Studies of buried (SiC)1-x(AIN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
Pezoldt, J.; Yankov, R. A.; Voelskow, M.; Brauer, G.; Anwand, W.; Heera, V.; Skorupa, W.; Coleman, P.
-
Contribution to external collection
Proc. 7th Int. Conf. Defect Recognition and Image Processing of Semicond. (DRIP VII) Inst. Phys. Conf. Ser. No. 160 (1998) IOP Publ. Ltd. Bristol, 1998, 335
Permalink: https://www.hzdr.de/publications/Publ-2177
Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Perez-Rodriguez, A.; Gonzalez-Varona, O.; Calvo-Barrio, L.; Morante, J. R.; Wirth, H.; Panknin, D.; Skorupa, W.
-
Contribution to external collection
Mat. Sci. Forum 258 - 263 (1998) 727
Permalink: https://www.hzdr.de/publications/Publ-2176
Hydrogen incorporation into Cu-III-VI 2 chalcopyrite semiconductors
Otte, K.; Lippold, G.; Grambole, D.; Herrmann, F.; Schlemm, H.; Schindler, A.; Bigl, F.
Abstract
We implanted H3+ at 300 eV into Cu-chalcopyrite semiconductors at temperatures between 50 °C and 300 °C. The surface chemistry is similar to the previously reported behavior of CuInS2 implanted with a H2+, H+ low energy ion beam with respect to secondary phase etching. We also found an increase of radiative recombination (photoluminescence), which had been attributed to defect passivation and, hence, as an indicator of hydrogen incorporation. Under the 300 eV H3+ implantation conditions, however, we observed neither a hydrogen concentration in a few hundred nm surface range exceeding the NRA detection limit of about l x exp(19) cm-3 nor a pronounced stoichiometry variation in the ternary material, as proved by Raman measurements.
We conclude, therefore, that a 300 eV H3+ implantation introduces significantly less atomic hydrogen into the volume of the sample than previously reported for other beam compositions under similar temperature and current density conditions. This could be a result of the very low energy of less than 100 eV which can be expected for atomic H produced by dissociation of 300 eV H3+ at the surface, making the instant out-diffusion into the high vacuum of the implantation chamber a favored process.
-
Poster
MRS-Spring Meeting, San Francisco, USA, April 13 - 17, 1998 - Materials Research Society Symposium Proceedings 513(1998), 275
Permalink: https://www.hzdr.de/publications/Publ-2175
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