Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

3 Publications
Formation of CoSi2 wires by maskless implantation with the focused ion beam
Teichert, J.; Bischoff, L.; Hesse, E.; Panknin, D.; Skorupa, W.;
The maskless ion implatation with the focused ion beam as as a new method for ion beam synthesis of cobalt silicide wires is presented. In order to perform the implantation a special achromatic mass seperator was implemented into the ion column, liquid alloy ion sources for cobalt ions were 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.
  • Lecture (Conference)
    und Proceedings MRS Fall Meeting, Boston, 29.11.-3.12.1993
  • Materials Research Society, Symposium Proceedings; Materials Synthesis and Processing Using Ion Beams; Vol. 316 (1994) pp. 741-746
  • Materials Research Society, Symposium Proceedings; Silicides, Germanides, and Their Interfaces; Vol. 320 (1994) pp. 153-158

Publ.-Id: 106 - Permalink