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The impact of implantation defects in SIMOX processing

Kögler, R.; Ou, X.
The impact of implantation induced point defects in SIMOX (Separation by IMplantation of OXygen) processing is explained. The origin of the so-called energy-dose window is shown to be the point defects generated by the oxygen implantation.
Keywords: Oxygen implantation, SIMOX, point defects
  • Lecture (Conference)
    Arbeitstreffen "Punktdefekte", 03.-04.04.2008, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-11291
Publ.-Id: 11291