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The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing

Kögler, R.; Ou, X.; Skorupa, W.; Möller, W.
The excess of implantation-induced point defects controls the oxygen redistribution in silicon during a high-temperature treatment such as in SIMOX (Separation-by-IMplanted-Oxygen). The Energy-Dose window for the formation of a perfect homogeneous and planar buried oxide layer is caused by excess point defects. Quantitative relations are given between the distribution of the initially generated excess defects and the finally formed oxide layer. Moreover, implantation-induced defects can explain the depth positions of different oxide precipitate layers and of silicon islands inside the oxide layer. Other defects, e.g. dislocations, which form during thermal treatment, can relocate the Energy-Dose window towards lower oxygen dose.
Keywords: Implantation defects, SIMOX, Silicon, Oxygen

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Permalink: https://www.hzdr.de/publications/Publ-11358
Publ.-Id: 11358