Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
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Nano-structures for sensors on SOI by writing FIB implantation and subsequent anisotropic wet chemical etchingBischoff, L.; Schmidt, B.; Lange, H.; Donzev, D.
Nanowires, nanocantilevers and nanobridges will be important components for future micro- and nanoelectronic devices as well as for nano-electro-mechanical systems (NEMS).
A modern technique to fabricate three-dimensional (3D) nanostructures is the combination of high-concentration p-type doping of silicon by writing implantation using a focused ion beam (FIB) with subsequent wet chemical anisotropic and selective etching. Free-standing FIB-patterned and chemically etched 3D Si structures with nanoscale thickness and width have been fabricated on 4 inch Silicon-On-Insulator (SOI) substrates using 30 keV Ga+ ion implantation and subsequent anisotropic etching in KOH/H2O solution. This technology is combined with classical microelectronic processing steps of photolithographic patterning and broad beam ion implantation to position and integrate 3D nanostructures into current technological platforms and therefore to increase the fabrication efficiency. Design, performance and fabrication considerations to achieve free-standing Si structures, like wires, bridges and cantilevers are discussed and some typical examples are shown. Static and dynamic electrical measurements are presented, including I-V characteristics and displacements after AC excitation.
The temperature dependence of the electrical resistance of nanostructures is demonstrated, which reveal, for example, the applications as nanowire thermal sensors.
Keywords: Nanostructures, FIB, anisotropic wet chemical etching; 3D-nanostructures; sensor; displacement
16th International Conference on Ion Beam Modification of Materials (IBMM 08), 30.08.-05.09.2008, Dresden, Deutschland
- Nuclear Instruments and Methods in Physics Research B 267(2009), 1372-1375
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