Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Implantation induced point defects and their role in silicon-on-insulator (SOI) materials processing
Kögler, R.;
The origin of the distribution of ion implantation induced point defects in Si and their effect on the oxygen redistribution during SIMOX processing is discussed.
Keywords: Ion implantation, SOI, SIMOX
  • Lecture (Conference)
    Workshop Ionenstrahlphysik, 06.-08.04.2009, Jena, Deutschland

Publ.-Id: 12680 - Permalink