Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications
Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow
Hippler, M.; Streit, S.; Lehmann, J.; Skorupa, W.; Schmidt, H.; Helm, M.; Lopes, J. M. J.; Schubert, J.; Huber, H.-P.; Kienberger, F.; Mantl, S.;
The capacitance of series LaScO3-SiO2 capacitors on Si substrates has been investigated in the same DC bias range and at the same operation frequencies by admittance and scanning microwave microscopy (SMM) measurements on the 10(-3) cm2 scale and 100 nm2 scale, respectively. By SMM measurements it is shown that changes in the series capacitance due to local current flows persist and that such nanoscale changes can be induced by slow speed SMM scans at a constant DC bias.
Keywords: C-V measurement, scanning microwave microscopy, LaScO₃-SiO₂ capacitor
  • Contribution to proceedings
    IEEE Semiconductor Conference Dresden, 27.-28.09.2011, Dresden, Deutschland
  • Lecture (Conference)
    IEEE Semiconductor Conference Dresden, 27.-28.09.2011, Dresden, Deutschland

Publ.-Id: 15805 - Permalink