Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Manganese-doped (1-x)BiScO3-xPbTiO3 high-temperature ferroelectrics: Defect structure and mechanism of enhanced electric resistivity
Drahus, M.; Jakes, P.; Erdem, E.; Schaab, S.; Chen, J.; Ozerov, M.; Zvyagin, S.; Eichel, R.;
The effect of multivalency manganese doping on the defect structure and enhanced electrical resistivity is studied for the high-temperature piezoelectric (1 - x)BiScO3-xPbTiO3 (BSPT) solid-solution system by means of multifrequency electron paramagnetic resonance spectroscopy combined with conductivity measurements. The results show that manganese is rather incorporated on a scandium than a titanium site as an isovalent substitute (MnScx) instead of acceptor-type centers, such as Mn(Ti)', Mn(Ti)'', or Mn(Sc)'. The enhanced electric resistivity is found being on the one hand due to the trapping of conduction electrons at the manganese functional center sites (Mn(Sc)(x) + e' -> Mn(Sc)'). On the other hand, through the formation of (Mn(Sc)' - V(O)(center dot center dot))(center dot) defect complexes the ionic conductivity is reduced. Concerning the overall mechanism of charge compensation in that material, both kinds of defects mutually compensate.
  • Physical Review B 84(2011), 064113

Publ.-Id: 16184 - Permalink