Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications
Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Lehmann, J.; Hübner, R.; Skorupa, W.; von Borany, J.; Mikolajick, T.; Schäfer, A.; Schubert, J.; Mantl, S.;
LaLuO3 and LaScO3 high-k layers were treated by flash lamp annealing (FLA) at temperatures between 1000°C and 1200°C for 3 or 20 ms. This procedure mimics the effect of an source/drain activation annealing by FLA on the electrical and microstructural properties of these alternative high-k dielectrics in a gate-first processing sheme. Related MOS capacitors with a TiN metal gate were processed in a gate first like processing scheme. It is shown that 3 nm thick oxide layers resist crystallization even at 1200°C for 3 ms, while nanocrystallites are formed in thicker layers. The influence of the FLA treatment on capacitance-voltage (C-V) and current-voltage (I-V) characteristics are investigated. From these measurements, the effects on the relative dielectric constant (k), the fixed oxide charge density (Qox) as well as the leakage current through the insulators are deduced.
Keywords: High-k gate dielectrics, Higher-k gate dielectrics, Ternary high-k oxides, Rare-earth based gate oxides, Electrical properties
  • Microelectronic Engineering 109(2013), 381-384
    DOI: 10.1016/j.mee.2013.04.021
  • Lecture (Conference)
    18th Conference of "Insulating Films on Semiconductors", 25.-28.06.2013, Kraków, Polen

Publ.-Id: 18485 - Permalink