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Interplay between magnetic domain patterning and anisotropic magnetoresistance probed by magnetooptics

Osten, J.ORC; Lenz, K.; Schultheiss, H.ORC; Lindner, J.; McCord, J.; Fassbender, J.ORC
We study the correlation between the magnetic reversal and the anisotropic magnetoresistance (AMR) response in magnetic hybrid structures that were created by local modification of magnetic properties induced by ion implantation. The stripe pattern have been investigated simultaneously by dual-wavelength Kerr microscopy and magnetoresistance measurements. We observe that the switching of the stripe pattern introduces an additional AMR maximum. The domain wall in between the stripes provides a positive resistance contribution, whereas domains at the stripe edges lead to an asymmetric AMR response. A method for calculating the AMR response from the quantitative Kerr micrographs is demonstrated that allows the reconstruction of the AMR value within a region of interest only.
Keywords: anisotropic magnetoresistance, magnetic domain

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Permalink: https://www.hzdr.de/publications/Publ-25848
Publ.-Id: 25848