Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Local formation of III-V nanocrystals in Si by ion implantation and flash lamp annealing
Rebohle, L.; Wutzler, R.; Prucnal, S.; Hübner, R.; Georgiev, Y.; Erbe, A.; Böttger, R.; Helm, M.; Skorupa, W.;
This presentation gives a short overview of our recent investigations devoted to the formation of III-V nanocrystals in bulk Si, in SOI substrates and at laterally defined positions. The group III and group V elements are incorporated by ion beam implantation, and the formation of III-V nanocrystals is due to liquid phase epitaxy during flash lamp annealing.
Keywords: ion implantation, flash lamp annealing, III-V integration into silicon, nanocrystal, liquid phase epitaxy
  • Lecture (Conference)
    42. Treffen der Nutzergruppe Heißprozesse und RTP, 08.11.2017, Itzehoe, Deutschland

Publ.-Id: 26292 - Permalink