Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Controlled Nickel Silicidation of Silicon Nanowires for Fabrication of Reconfigurable Field Effect Transistors
Khan, M. B.; Deb, D.; Georgiev, Y. M.; Prucnal, S.; Voelskow, M.; Erbe, A.;
Physical scaling down of field effect transistors (FET) is reaching its end. To meet the consistent demand for faster, smaller and energy efficient transistors, new concepts which include new materials, new architectures, new computation principles and enhanced functionality are under research. Focus of this work is to fabricate devices with enhanced functionality, the so called reconfigurable FET (RFET) which can be configured as p- or n-channel FET. These FETs are realized by fabricating silicon nanowires (SiNWs) on Si on insulator (SOI) substrates. These NWs are subsequently nickel silicided at both ends to form Si-NiSi2-Si Schottky junctions. Control over silicide length is important to scale Si channel and to have symmetric contacts on both sides of nanowires. Focus of our recent work is achieve this control over silicidation by using flash lamp annealing (FLA). Comparison between silicidation using flash lamp annealing (FLA) and rapid thermal annealing (FLA) along with the resulting electrical characteristics of these devices will be presented at the conference.
  • Poster
    DPG-Frühjahrstagung 2018, 11.-16.03.2018, Berlin, Germany

Publ.-Id: 27418 - Permalink