Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Flexible IGZO TFTs and their Suitability for Space Applications
Costa, J. C.; Pouryazdan, A.; Panidi, J.; Spina, F.; Anthopoulos, T.; Liedke, M. O.; Schneider, C.; Wagner, A.; Münzenrieder, N.;
In this paper, Low Earth Orbit radiation, temperature and magnetic field conditions are mimicked to investigate the suitability of flexible Indium Gallium Zinc Oxide transistors for lightweight space wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive radiation detectors or physiological monitors. Due to the harsh environment to which these space wearables would be exposed, they have to be able to withstand high radiation doses, low temperatures and magnetic fields. For this reason, the impacts of high energetic electron irradiation with fluences up to 1E12 e−/cm2, low operating temperatures down to 78K and magnetic fields up to 11mT are investigated. This simulates 278 h in Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e- irradiation are found to shift by +(0.09 +- 0.05)V and (0.6 +- 0.5) cm 2 V−1 s−1. Subsequent low temperature exposure resulted in additional shifts of +0.38V and -5.95 cm2 V−1 s−1 for the same parameters. These values are larger than the ones obtained from non irradiated reference samples. In addition, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiate, cooled down and exposed to the magnetic fields. If these notions are considered during the systems’ design, these devices can be used to unobtrusively integrate sensor systems into space suits.
Keywords: Flexible electronics, Space applications, Amorphousnoxides; Wearables, Thin film transistors

Publ.-Id: 29037 - Permalink